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RJH1CV7DPQ-E0: 产品描述1200V - 35A - IGBT Application: Inverter; 文件大小48KB，共4页; 制造商Renesas(瑞萨电子); 官网地址https://www.renesas.com/

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RJH1CV7DPQ-E0概述

1200V - 35A - IGBT Application: Inverter

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Preliminary Datasheet

RJH1CV7DPQ-E0

1200V - 35A - IGBT

Application: Inverter

Features



Short circuit withstand time (5

s

typ.)



Low collector to emitter saturation voltage

CE(sat)

= 1.8 V typ. (at I

= 35 A, V

= 15 V, Ta = 25°C)



Built-in fast recovery diode (t

= 200 ns typ.) in one package



Trench gate and thin wafer technology



High speed switching

= 200 ns typ. (at V

= 600 V, V

= 15 V, I

= 35 A, Rg = 5

,

Ta = 25°C, inductive load)

R07DS0525EJ0400

Rev.4.00

Jan 19, 2012

Outline

RENESAS Package code: PRSS0003ZE-A

(Package name: TO-247)

1. Gate

2. Collector

3. Emitter

4. Collector

1 2

Absolute Maximum Ratings

(Ta = 25°C)

Item

Collector to emitter voltage / diode reverse voltage

Gate to emitter voltage

Collector current

Tc = 25°C

Tc = 100°C

Collector peak current

Collector to emitter diode forward current

Collector to emitter diode forward peak current

Collector dissipation

Junction to case thermal resistance (IGBT)

Junction temperature

Storage temperature

Notes: 1. PW



s,

duty cycle



2. Value at Tc = 25C

Symbol

CES

/ V

GES

ic(peak)

Note1

(peak)

Note1

C Note2

j-c

Note2

Tstg

Ratings

1200

30

105

328.9

0.38

150

–55 to +150

Unit

°C/ W

°C

R07DS0525EJ0400 Rev.4.00

Jan 19, 2012

Page 1 of 3

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RJH1CV7DPQ-E0

RJH1CV7DPQ-E0概述

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