Preliminary
Datasheet
HITK0303MP
Silicon N Channel MOS FET
Power Switching
Features
Low on-resistance
R
DS(on)
= 42 m typ (V
GS
= 10 V, I
D
= 1.8 A)
Low drive current
High speed switching
4.5 V gate drive
R07DS0484EJ0100
Rev.1.00
Jun 22, 2011
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
D
3
1
2
S
1
2
G
1. Source
2. Gate
3. Drain
Note:
Marking is “MG”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(Pulse) Note1
I
DR
Pch
Note2
Tch
Tstg
Ratings
30
20
3.7
5
3.7
0.8
150
–55 to +150
Unit
V
V
A
A
A
W
C
C
Notes: 1. PW
10
s,
duty cycle
1%
2. When using the glass epoxy board (FR-4: 40
40
1 mm)
R07DS0484EJ0100 Rev.1.00
Jun 22, 2011
Page 1 of 6
HITK0303MP
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Drain to source leak current
Gate to source cutoff voltage
Drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body - drain diode forward voltage
Notes: 3. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
Min
30
20
—
—
1.0
—
—
3.9
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
42
50
6.5
550
87
42
13
39
46
114
8.9
1.0
1.3
0.8
Max
—
—
10
1
2.0
53
70
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
V
A
A
V
m
m
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
100 A,
V
DS
= 0
V
GS
=
16
V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 1.8 A, V
GS
= 10 V
Note3
I
D
= 1.8 A, V
GS
= 4.5 V
Note3
I
D
= 1.8 A, V
DS
= 10 V
Note3
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 1 A, V
GS
= 10 V,
R
L
= 10
,
Rg = 4.7
V
DD
= 10 V, V
GS
= 10 V,
I
D
= 3.7A
I
F
= 1.5 A, V
GS
= 0
Note3
R07DS0484EJ0100 Rev.1.00
Jun 22, 2011
Page 2 of 6
HITK0303MP
Preliminary
Main Characteristics
Maximum Channel Power
Dissipation Curve
1.2
100
Operation in this area
is limited by R
DS(on)
10
1
m
PW
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
1.0
0.8
0.6
0.4
0.2
0
100
μs
s
=
1
D
10
C
s
m
O
pe
ra
tio
n
0.1
0
25
50
75
100
125
150
0.01
0.01
Tc = 25°C
0.1
1
10
100
Ambient Temperature Ta (°C)
*When using the glass epoxy board (FR-4: 40
×
40
×
1 mm)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
5
3.0 V
10 V
2.9 V
2.8 V
Typical Transfer Characteristics
(1)
5
V
DS
= 10 V
Pulse Test
2.7 V
Drain Current I
D
(A)
Drain Current I
D
(A)
4
4
25°C
3
2.6 V
3
2
2
2.5 V
Pulse Test
Tc = 25
°
C
2.4 V
2.3 V
V
GS
= 0 V
Tc = 75°C
1
–25°C
0
0.5
1
0
0
2
4
6
8
10
1
1.5
2
2.5
3
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Gate to Source Cutoff Voltage vs.
Gate to Source Cutoff Voltage
V
GS(off)
(V)
Typical Transfer Characteristics
(2)
1.0
Case Temperature
2.5
V
DS
= 10 V
Pulse Test
Tc = 75°C
Drain Current I
D
(A)
0.1
2
ID = 10 mA
1.5
1 mA
0.1 mA
1
V
DS
= 10 V
Pulse Test
0
25
50
75
100 125
150
0.01
25°C
–25°C
0.001
0.0001
0
0.5
1
1.5
2
2.5
3
0.5
–25
Gate to Source Voltage V
GS
(V)
Case Temperature Tc (°C)
R07DS0484EJ0100 Rev.1.00
Jun 22, 2011
Page 3 of 6
HITK0303MP
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
Tc = 25°C
0.3
Preliminary
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source Saturation Voltage V
DS(on)
(V)
Drain to Source on State Resistance
R
DS(on)
(Ω)
0.4
1.0
Pulse Test
Tc = 25°C
0.3
0.2
1.5 A
1.0 A
0.1
0.5 A
0.2 A
0.1 A
0.1
V
GS
= 4.5 V
0.03
10 V
0
0
2
4
6
8
10
0.01
0.1
0.3
1
3
10
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Static Drain to Source on State Resistance
vs. Case Temperature
Static Drain to Source on State Resistance
vs. Case Temperature
Drain to Source on State Resistance
R
DS(on)
(mΩ)
Drain to Source on State Resistance
R
DS(on)
(mΩ)
100
90
80
70
0.5 A
60
50
40
30
–25
0
25
50
75
100 125 150
0.2 A
Pulse Test
V
GS
= 4.5 V
I
D
= 1.5 A
1A
90
80
70
60
50
40
30
–25
Pulse Test
V
GS
= 10 V
1A
I
D
= 1.5 A
0.5 A
0.2 A
0
25
50
75
100 125
150
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Zero Gate Voltage Drain current vs.
Case Temperature
10000
Pulse Test
V
GS
= 0 V
V
DS
= 30 V
100
Pulse Test
V
DS
= 10 V
10
–25°C
25°C
Zero Gate Voltage Drain current I
DSS
(nA)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
1000
100
1
Tc = 75°C
10
0.1
0.1
1
Drain Current I
D
(A)
10
1
–25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
R07DS0484EJ0100 Rev.1.00
Jun 22, 2011
Page 4 of 6
HITK0303MP
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
I
D
= 3.7 A
Tc = 25°C
80
V
DD
=10 V
25 V
40
V
DS
20
V
DD
= 25 V
10 V
0
2
4
6
8
4
0
10
V
GS
8
16
Preliminary
Switching Characteristics
Gate to Source Voltage V
GS
(V)
20
1000
tf
100
td(off)
td(on)
10 tr
V
DD
= 10 V
V
GS
= 10 V
Rg = 4.7
Ω
P
W
= 5
μs
Tc = 25°C
0.1
1
10
100
60
12
Switching Time t (ns)
0
1
0.01
Gate Charge Qg (nC)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
1000
800
Input Capacitance vs.
Gate to Source Voltage
Ciss, Coss, Crss (pF)
Ciss
750
Ciss (pF)
100
700
Coss
Crss
650
V
DS
= 0 V
f = 1 MHz
V
GS
= 0 V
f = 1 MHz
10
0
5
10
15
20
25
30
600
–10
–5
0
5
10
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
5
Gate to Source Voltage V
GS
(V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
0.9
V
GS
= 0
0.8
0.7
0.6
0.5
0.4
0.3
–25
I
D
= 10 mA
Pulse Test
Tc = 25°C
4
V
GS
= 10 V
5V
0 V, –5 V, –10 V
2
3
Body-Drain Diode Forward Voltage V
SDF
(V)
Reverse Drain Current I
DR
(A)
1 mA
1
0
0
0.4
0.8
1.2
1.6
2.0
0
25
50
75
100 125 150
Source to Drain Voltage V
SD
(V)
Case Temperature Tc (°C)
R07DS0484EJ0100 Rev.1.00
Jun 22, 2011
Page 5 of 6
DSP 与 ARM 处理器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
