Preliminary
Datasheet
HITK0202MP
20V, 3.8A, 55mmax.
Silicon N Channel MOS FET
Power Switching
Features
Low on-resistance
R
DS(on)
= 42 m typ (V
GS
= 4.5 V, I
D
= 1.9 A)
Low drive current
High speed switching
2.5 V gate drive
R07DS0480EJ0200
Rev.2.00
May 09, 2013
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
D
3
2
1
2
S
1
G
1. Source
2. Gate
3. Drain
Note:
Marking is “RV”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse) Note1
I
DR
Pch
Note2
Tch
Tstg
Ratings
20
12
3.8
12
3.8
0.8
150
–55 to +150
Unit
V
V
A
A
A
W
C
C
Notes: 1. PW
10
s,
duty cycle
1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
R07DS0480EJ0200 Rev.2.00
May 09, 2013
Page 1 of 6
HITK0202MP
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Drain to source leak current
Gate to source cutoff voltage
Drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body - drain diode forward voltage
Notes: 3. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
Min
20
12
—
—
0.4
—
—
6
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
42
62
8.5
293
74
37
13
88
35
7
3.7
0.5
0.8
0.85
Max
—
—
10
1
1.4
55
85
—
—
—
—
—
—
—
—
—
—
—
1.1
Unit
V
V
A
A
V
m
m
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
100 A,
V
DS
= 0
V
GS
=
10
V, V
DS
= 0
V
DS
= 20 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 1.9 A, V
GS
= 4.5 V
Note3
I
D
= 1.9 A, V
GS
= 2.5 V
Note3
I
D
= 1.9 A, V
DS
= 10 V
Note3
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 1.9 A
V
GS
= 4.5 V
R
L
= 5.2
Rg = 4.7
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 3.8 A
I
F
= 3.8 A, V
GS
= 0
Note3
R07DS0480EJ0200 Rev.2.00
May 09, 2013
Page 2 of 6
HITK0202MP
Preliminary
Main Characteristics
Maximum Channel Power
Dissipation Curve
1
100
Operation in this area
is limited by R
DS(on)
100
μs
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
0.8
10
1
m
0.6
1
PW
10
s
s
D
=
m
0.4
C
10
O
0
pe
r
m
s
at
0.2
0
0.1
Ta = 25°C
1 Shot Pulse
io
n
0
50
100
150
0.01
0.01
0.1
1
10
100
Ambient Temperature Ta (°C)
*When using the glass epoxy board (FR-4: 40
×
40
×
1 mm)
Drain to Source Voltage V
DS
(V)
10 V
Typical Output Characteristics
5V
Typical Transfer Characteristics
(1)
12
V
DS
= 10 V
Pulse Test
12
2.8 V
3.0 V
2.2 V
10
Drain Current I
D
(A)
8
6
4
2.4 V
Pulse Test
Tc = 25
°
C
2.0 V
1.8 V
1.6 V
Drain Current I
D
(A)
2.6 V
10
8
6
4
2 Tc = 75°C
1.4 V
2
0
V
GS
= 0 V
0
2
4
6
8
10
0
0
0.5
1
25°C
–25°C
1.5 2 2.5
3
3.5
4
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Gate to Source Cutoff Voltage vs.
1
V
DS
= 10 V
Pulse Test
Gate to Source Cutoff Voltage
V
GS(off)
(V)
Typical Transfer Characteristics
(2)
Case Temperature
1.6
V
DS
= 10 V
Pulse Test
1.2
I
D
= 10 mA
0.8
Drain Current I
D
(A)
0.1
Tc = 75°C
0.01
25°C
0.001
–25°C
0.4
1 mA
0.1 mA
0.0001
0
0.5
1
1.5
2
0
–25
0
25
50
75
100 125 150
Gate to Source Voltage V
GS
(V)
Case Temperature Tc (°C)
R07DS0480EJ0200 Rev.2.00
May 09, 2013
Page 3 of 6
HITK0202MP
Drain to Source Saturation Voltage
V
DS(on)
(mV)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Preliminary
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
400
Pulse Test
Tc = 25°C
1000
Pulse Test
Tc = 25°C
300
200
3.8 A
100
1.9 A
1A
0
0
0.5 A
2
4
6
8
10
100
V
GS
= 2.5 V
4.5 V
10 V
10
0.1
1
10
100
Gate to Source Voltage
V
GS
(V)
Static Drain to Source on State Resistance
vs. Case Temperature
Drain Current
I
D
(A)
Static Drain to Source on State Resistance
vs. Case Temperature
Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
100
90
80
1.9 A
70
60
50
40
30
–25
0.5 A
1A
Pulse Test
V
GS
=
2
.5 V
50
75
100 125 150
I
D
= 3.8 A
70
Pulse Test
V
GS
= 4.5 V
60
1.9 A
50
I
D
= 3.8 A
40
0.5 A
30
20
–25
1A
0
25
0
25
50
75
100 125 150
Case Temperature
Tc (
°
C)
Case Temperature
Tc (
°
C)
Zero Gate Voltage Drain current vs.
Case Temperature
10000
Pulse Test
V
GS
= 0 V
1000 V
DS
= 20 V
Forward Transfer Admittance
|yfs| (S)
100
Pulse Test
V
DS
= 10 V
–25°C
10
Zero Gate Voltage Drain current
I
DSS
(nA)
Forward Transfer Admittance vs.
Drain Current
100
25°C
1
Tc = 75°C
10
1
0.1
–25
0.1
0.01
0.1
1
10
100
0
25
50
75
100 125 150
Drain Current
I
D
(A)
Case Temperature
Tc (
°
C)
R07DS0480EJ0200 Rev.2.00
May 09, 2013
Page 4 of 6
HITK0202MP
Dynamic Input Characteristics
Preliminary
Switching Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
40
V
GS
30
16
1000
12
Switching Time
t (ns)
100
V
DD
= 10 V
V
GS
= 4.5 V
Rg = 4.7
Ω
PW = 5
μs
Tc = 25°C
td(off)
td(on)
tr
20
V
DD
= 20 V
10 V
5V
5V
10 V
V
DD
= 20 V
I
D
=
3.8
A
Tc = 25°C
8
10
10
4
tf
0
V
DS
0
2
4
6
8
0
10
1
0.1
1
10
100
Gate Charge Qg (nc)
Drain Current
I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
1000
600
Input Capacitance vs.
Gate to Source Voltage
Ciss, Coss, Crss (pF)
Ciss
550
Ciss (pF)
500
100
Coss
Crss
V
GS
= 0 V
f = 1 MHz
450
400
350
V
DS
= 0 V
f = 1 MHz
0
2
4
6
8
10
10
0
5
10
15
20
–
10
–
8
–
6
–
4
–
2
Drain to Source Voltage
V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
12
Gate to Source Voltage V
GS
(V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
0.6
V
GS
= 0
0.5
Reverse Drain Current I
DR
(A)
10 V
5V
8
Pulse Test
Tc = 25°C
Body-Drain Diode Forward Voltage V
SDF
(V)
0.4
I
D
= 10 mA
0.3
4
–5, –10 V
V
GS
= 0 V
0.4
0.8
1.2
1.6
2.0
0.2
0.1
25
1 mA
0
0
50
75
100
125
150
Source to Drain Voltage V
SD
(V)
Case Temperature Tc (°C)
R07DS0480EJ0200 Rev.2.00
May 09, 2013
Page 5 of 6
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