Preliminary
Datasheet
RJP63K2DPP-M0
Silicon N Channel IGBT
High Speed Power Switching
Features
Trench gate and thin wafer technology (G6H-II series)
Low collector to emitter saturation voltage: V
CE(sat)
= 1.9 V typ
High speed switching: t
r
= 60 ns typ, t
f
= 200 ns typ.
Low leak current: I
CES
= 1
A
max
Isolated package TO-220FL
R07DS0468EJ0200
Rev.2.00
Jun 15, 2011
Outline
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
C
G
1. Gate
2. Collector
3. Emitter
1
2 3
E
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Tc = 25C
Symbol
V
CES
V
GES
I
C
ic(peak)
Note1
Note2
P
C
j-c
Tj
Tstg
Ratings
630
±30
35
200
25
5
150
–55 to +150
Unit
V
V
A
A
W
°C/W
°C
°C
R07DS0468EJ0200 Rev.2.00
Jun 15, 2011
Page 1 of 6
RJP63K2DPP-M0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation
voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Switching time
Symbol
I
CES
I
GES
V
GE(off)
V
CE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
t
d(on)
t
r
t
d(off)
t
f
Min
—
—
2.5
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
1.9
620
26
11
20
3
7
0.02
0.06
0.05
0.2
Max
1
±100
5
2.4
—
—
—
—
—
—
—
—
—
—
Unit
A
nA
V
V
pF
pF
pF
nC
nC
nC
s
s
s
s
Test Conditions
V
CE
= 630 V, V
GE
= 0
V
GE
= ± 30 V, V
CE
= 0
V
CE
= 10 V, I
C
= 1 mA
I
C
= 35 A, V
GE
= 15 V
Note3
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
V
GE
= 15 V
V
CE
= 300 V
I
C
= 35 A
I
C
= 35 A
R
L
= 8.5
V
GE
= 15 V
R
G
= 5
Notes: 3. Pulse test
R07DS0468EJ0200 Rev.2.00
Jun 15, 2011
Page 2 of 6
RJP63K2DPP-M0
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000
10
Typical Output Characteristics
100
Ta = 25
°
C
Pulse Test
10 V
15 V
9V
8.5 V
8V
7.5 V
7V
100
Collector Current I
C
(A)
Collector Current I
C
(A)
PW
μ
s
80
=
10
10
0
μ
s
60
1
40
6.5 V
6V
0.1
Ta = 25
°
C
1 shot pulse
0.01
0.1
1
10
100
1000
20
0
0
2
4
6
V
GE
= 5.5 V
8
10
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Typical Transfer Characteristics
50
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
10
Ta = 25
°
C
Pulse Test
I
C
= 35 A
6
80 A
120 A
Collector Current I
C
(A)
V
CE
= 10 V
Pulse Test
40
8
30
20
4
10
0
0
Tc = 75°C
25°C
−25°C
2
0
0
4
8
12
16
20
2
4
6
8
10
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Collector Current (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
10
V
GE
= 15 V
Pulse Test
Tc = 75°C
1
−25°C
25°C
0.1
1
10
100
Collector Current I
C
(A)
R07DS0468EJ0200 Rev.2.00
Jun 15, 2011
Page 3 of 6
RJP63K2DPP-M0
Typical Capacitance vs.
Colloctor to Emitter Voltage
1000
Cies
Preliminary
Dynamic Input Characteristics (Typical)
Colloctor to Emitter Voltage V
CE
(V)
Capacitance C (pF)
600
V
CC
= 300 V
I
C
= 35 A
Ta = 25°C
V
GE
12
100
400
8
Coes
10
V
GE
= 0 V
f = 1 MHz
Ta = 25
°
C
1
0
20
40
60
80
100
Cres
200
V
CE
0
0
8
16
24
32
4
0
40
Colloctor to Emitter Voltage V
CE
(V)
Gate Charge Qg (nC)
Switching Characteristics (Typical) (1)
1000
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Ta = 25°C
Switching Characteristics (Typical) (2)
1000
I
C
= 35 A, V
GE
= 15 V
R
L
= 8.5
Ω,
Ta = 25°C
tf
td(off)
100
tr
Switching Time t (ns)
tf
tr
td(off)
td(on)
100
Switching Time t (ns)
td(on)
10
10
1
10
100
1
10
100
Colloctor Current I
C
(A)
Gate Resistance Rg (Ω)
Switching Characteristics (Typical) (3)
1000
I
C
= 35 A, V
GE
= 15 V
R
L
= 8.5
Ω,
Rg = 5
Ω
tf
Switching Time t (ns)
100
tr
td(off)
td(on)
10
0
25
50
75
100
125
150
Case Temperature Tc (°C)
R07DS0468EJ0200 Rev.2.00
Jun 15, 2011
Page 4 of 6
Gate to Emitter Voltage V
GE
(V)
800
16
RJP63K2DPP-M0
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
3
D=1
0.5
0.3
0.2
0.1
0.05
0.0
2
Preliminary
1
0.1
0.03
1
0.0
1
sh
o
u
tp
lse
P
DM
PW
T
1m
10 m
100 m
1
D=
PW
T
0.01
10
Pulse Width PW (s)
Switching Time Test Circuit
Ic Monitor
R
L
Vin Monitor
Vin
10%
Waveform
90%
90%
Rg
D.U.T.
.
V
CC
Ic
td(on)
10%
ton
90%
Vin = 15 V
10%
tr
td(off)
toff
tf
R07DS0468EJ0200 Rev.2.00
Jun 15, 2011
Page 5 of 6
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