Preliminary
Datasheet
RJP60D0DPM
Silicon N Channel IGBT
High Speed Power Switching
Features
Short circuit withstand time (5
s
typ.)
Low collector to emitter saturation voltage
V
CE(sat)
= 1.6 V typ. (I
C
= 22 A, V
GE
= 15V, Ta = 25°C)
Gate to emitter voltage rating
30
V
Pb-free lead plating and chip bonding
R07DS0088EJ0200
Rev.2.00
Nov 16, 2010
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
C
G
1. Gate
2. Collector
3. Emitter
E
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
Symbol
V
CES
V
GES
I
C
I
C
ic(peak)
Note1
P
C Note2
j-c
Note2
Tj
Tstg
Ratings
600
±30
45
22
90
40
3.125
150
–55 to +150
Unit
V
V
A
A
A
W
°C/ W
°C
°C
R07DS0088EJ0200 Rev.2.00
Nov 16, 2010
Page 1 of 6
RJP60D0DPM
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Switching time
Symbol
I
CES
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
t
d(on)
t
r
t
d(off)
t
f
t
sc
Min
—
—
4.0
—
—
—
—
—
—
—
—
—
—
—
—
3.0
Typ
—
—
—
1.6
2.0
1050
70
32
45
6
20
35
20
90
70
5.0
Max
5
±1
6.0
2.2
—
—
—
—
—
—
—
—
—
—
—
—
Unit
A
A
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
s
Test Conditions
V
CE
= 600 V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10 V, I
C
= 1 mA
I
C
= 22 A, V
GE
= 15 V
Note3
I
C
= 45 A, V
GE
= 15 V
Note3
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
V
GE
= 15 V
V
CE
= 300 V
I
C
= 22 A
V
CC
= 300 V, V
GE
= 15 V
I
C
= 22 A
Rg = 5
Inductive
load)
V
CC
360 V, V
GE
= 15 V
Short circuit withstand time
Notes: 3. Pulse test
R07DS0088EJ0200 Rev.2.00
Nov 16, 2010
Page 2 of 6
RJP60D0DPM
Preliminary
Main Characteristics
Collector Dissipation vs.
Case Temperature
50
50
Maximum DC Collector Current vs.
Case Temperature
Collector Dissipation Pc (W)
40
Collector Current I
C
(A)
0
25
50
75
100 125 150 175
40
30
30
20
20
10
10
0
0
0
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area
1000
100
Turn-off SOA
Collector Current I
C
(A)
Collector Current I
C
(A)
100
80
PW
10
10
=
0
μ
10
s
μ
s
60
40
1
Ta = 25°C
Single pulse
0.1
1
20
0
10
100
1000
0
200
400
600
800
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Typical Output Characteristics
Pulse Test
Ta = 25
°
C
15 V
60
18 V
40
V
GE
= 8 V
20
12 V
80
10 V
Typical Output Characteristics
Pulse Test
Ta = 150
°
C
15 V
60
18 V
40
V
GE
= 8 V
20
10 V
12 V
80
Collector Current I
C
(A)
0
0
1
2
3
4
5
Collector Current I
C
(A)
0
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
R07DS0088EJ0200 Rev.2.00
Nov 16, 2010
Page 3 of 6
RJP60D0DPM
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
8
Ta = 25
°
C
Pulse Test
Preliminary
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
8
Ta = 150
°
C
Pulse Test
Collector to Emitter Satularion Voltage
V
CE(sat)
(V)
6
I
C
= 22 A
4
45 A
Collector to Emitter Satularion Voltage
V
CE(sat)
(V)
6
I
C
= 22 A
4
45 A
2
2
0
0
4
8
12
16
20
0
0
4
8
12
16
20
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Voltage V
GE
(V)
Switching Caracteristics (Typical) (1)
1000
10000
Switching Caracteristics (Typical) (2)
Swithing Energy Losses E (µJ)
Switching Times t (ns)
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Ta = 25
°
C
100
td(off)
tf
td(on)
1000
Eoff
100
Eon
10
tr
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Ta = 25
°
C
1
10
100
1
10
1
10
100
Collector Current I
C
(A)
(Inductive load)
Switching Caracteristics (Typical) (3)
1000
Collector Current I
C
(A)
(Inductive load)
Switching Caracteristics (Typical) (4)
1000
Swithing Energy Losses E (µJ)
Switching Times t (ns)
V
CC
= 300 V, V
GE
= 15 V
I
C
= 22 A, Ta = 25
°
C
Eoff
Eon
100
100
td(off)
td(on)
tf
tr
10
2
5
10
20
50
10
2
5
V
CC
= 300 V, V
GE
= 15 V
I
C
= 22 A, Ta = 25
°
C
10
20
50
Gate Registance Rg (Ω)
(Inductive load)
Gate Registance Rg (Ω)
(Inductive load)
R07DS0088EJ0200 Rev.2.00
Nov 16, 2010
Page 4 of 6
RJP60D0DPM
Transfer Characteristics (Typical)
Preliminary
80
Collector Current I
C
(A)
Ta = 25
°
C
60
150
°
C
40
20
V
CE
= 10 V
Pulse Test
0
0
4
8
12
16
Gate to Emitter Voltage V
GE
(V)
Thermal Impedance vs. Pulse Width
Thermal Impedance
θ
ch – c (°C/W)
10
T
C
= 25°C
1
le
Sing
puls
e
0.1
0.01
100
µ
1m
10 m
100 m
1
10
100
Pulse Width PW (s)
Switching Time Test Circuit
Waveform
90%
Diode clamp/
D.U.T
L
Vin
10%
90%
90%
Rg
D.U.T/
Driver
V
CC
Ic
td(on)
10%
tr
ton
10%
td(off)
toff
tf
R07DS0088EJ0200 Rev.2.00
Nov 16, 2010
Page 5 of 6
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
