Preliminary
Datasheet
RJP30H1DPP-M0
Silicon N Channel IGBT
High speed power switching
Features
Trench gate and thin wafer technology (G6H-II series)
High speed switching: t
r
=80 ns typ., t
f
= 150 ns typ.
Low collector to emitter saturation voltage: V
CE(sat)
= 1.5 V typ.
Low leak current: I
CES
= 1
A
max.
Isolated package TO-220FL
R07DS0466EJ0200
Rev.2.00
Jun 15, 2011
Outline
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
C
G
1. Gate
2. Collector
3. Emitter
1
2 3
E
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Tc = 25C
Symbol
V
CES
V
GES
I
C
ic(peak)
Note1
Note2
P
C
j-c
Tj
Tstg
Ratings
360
±30
30
200
20
6.25
150
–55 to +150
Unit
V
V
A
A
W
°C/W
°C
°C
R07DS0466EJ0200 Rev.2.00
Jun 15, 2011
Page 1 of 6
RJP30H1DPP-M0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation
voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Switching time
Symbol
I
CES
I
GES
V
GE(off)
V
CE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
t
d(on)
t
r
t
d(off)
t
f
Min
—
—
2.5
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
1.5
740
40
17
23
4
8
0.02
0.08
0.04
0.15
Max
1
±100
5
2
—
—
—
—
—
—
—
—
—
—
Unit
A
nA
V
V
pF
pF
pF
nC
nC
nC
s
s
s
s
Test Conditions
V
CE
= 360 V, V
GE
= 0
V
GE
= ± 30 V, V
CE
= 0
V
CE
= 10 V, I
C
= 1 mA
I
C
= 30A, V
GE
= 15 V
Note3
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
V
GE
= 15 V
V
CE
= 150 V
I
C
= 30 A
I
C
= 30 A
R
L
= 5
V
GE
= 15 V
R
G
= 5
Notes: 3. Pulse test
R07DS0466EJ0200 Rev.2.00
Jun 15, 2011
Page 2 of 6
RJP30H1DPP-M0
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000
μ
s
Typical Output Characteristics (1)
100
Ta = 25
°
C
Pulse Test
7.5 V
8V
7V
6.5 V
6V
40
5.5 V
20
0
100
PW
Collector Current I
C
(A)
Collector Current I
C
(A)
10
80
=
10
9V
10 V
0
10
μ
s
60
15 V
1
0.1
Ta = 25
°
C
1 shot pulse
0.01
0.1
1
10
100
1000
V
GE
= 5 V
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Typical Output Characteristics (2)
200
Ta = 25
°
C
Pulse Test
14 V
15 V
12 V
11 V
50
Typical Transfer Characteristics
V
CE
= 10 V
Pulse Test
40
Collector Current I
C
(A)
160
10 V
9V
8V
7V
6V
120
Collector Current I
C
(A)
30
80
20
40
10
0
V
GE
= 5 V
0
0
2
4
6
8
10
Tc = 75°C
25°C
–25°C
0
2
4
6
8
10
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
5
I
C
= 30 A
60 A
90 A
Collector to Emitter Saturation Voltage
vs. Collector Current (Typical)
10
V
GE
= 15 V
Pulse Test
4
3
Tc = –25°C
1
25°C 75°C
2
1
Pulse Test
Ta = 25
°
C
0
0
4
8
12
16
20
0.1
1
10
100
Gate to Emitter Voltage V
GE
(V)
Collector Current I
C
(A)
R07DS0466EJ0200 Rev.2.00
Jun 15, 2011
Page 3 of 6
RJP30H1DPP-M0
Typical Capacitance vs.
Colloctor to Emitter Voltage
10000
V
GE
= 0 V, f = 1 MHz
Ta = 25°C
Preliminary
Dynamic Input Characteristics (Typical)
Colloctor to Emitter Voltage V
CE
(V)
Capacitance C (pF)
1000
Cies
600
V
CC
= 150 V
I
C
= 30 A
Ta = 25°C
V
GE
12
100
Coes
10
Cres
1
400
8
200
V
CE
0
0
8
16
24
32
4
0
20
40
60
80
100
0
40
Colloctor to Emitter Voltage V
CE
(V)
Gate Charge Qg (nC)
Switching Characteristics (Typical) (1)
1000
V
CC
= 150 V, V
GE
= 15 V
Rg = 5
Ω,
Ta = 25°C
Switching Characteristics (Typical) (2)
1000
I
C
= 30 A, V
GE
= 15 V
R
L
= 5
Ω,
Ta = 25°C
Switching Time t (ns)
tf
100
td(off)
tr
td(on)
10
1
10
100
Switching Time t (ns)
tf
100
tr
td(off)
td(on)
10
1
10
100
Colloctor Current I
C
(A)
Gate Resistance Rg (Ω)
Switching Characteristics (Typical) (3)
1000
I
C
= 30 A, V
GE
= 15 V
R
L
= 5
Ω,
Rg = 5
Ω
Switching Time t (ns)
tf
100
tr
td(off)
td(on)
10
0
25
50
75
100
125
150
Case Temperature Tc (°C)
R07DS0466EJ0200 Rev.2.00
Jun 15, 2011
Page 4 of 6
Gate to Emitter Voltage V
GE
(V)
800
16
RJP30H1DPP-M0
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
3
D=1
0.5
0.3
0.2
0.1
Preliminary
1
0.1
0.03
0.05
0.0
2
l
pu
se
P
DM
PW
T
1m
10 m
100 m
1
D=
PW
T
0
.01
0.01
ot
sh
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Ic Monitor
R
L
Vin Monitor
Vin
10%
Waveform
90%
90%
Rg
D.U.T.
.
V
CC
Ic
td(on)
10%
ton
90%
Vin = 15 V
10%
tr
td(off)
toff
tf
R07DS0466EJ0200 Rev.2.00
Jun 15, 2011
Page 5 of 6
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