Preliminary
Datasheet
RJM0404JSC
Silicon N/P Channel Power MOS FET (6 in 1 Type)
High Speed Power Switching
Features
For Automotive applications
AEC-Q101 compliant
N/P Channel MOS FET (6 in 1 Type). High density mounting
Low on-resistance
Capable of 4.5 V gate drive
R07DS0338EJ0500
Rev.5.00
May 11, 2011
Outline
RENESAS Package Code: PRSP0020DF-A
(Package Name: HSOP-20)
MOS6
Pch
19
S
MOS5
Pch
14
S
MOS4
Pch
11
S
20
G
17
G
12
G
D 3,18,21
2
G
7
G
D 5,6,15,16,22
10
G
D 8,13,23
S
1
MOS1
Nch
S
4
MOS2
Nch
S
9
MOS3
Nch
R07DS0338EJ0500 Rev.5.00
May 11, 2011
Page 1 of 11
RJM0404JSC
Preliminary
Pin Arrangement
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
20
19
18
17
16
15
14
13
12
11
1
2
3
4
5
6
7
8
9
10
21
Common Header
22
Common Header
23
Common Header
(Top View)
No.
MOS6
Pch
19
S
(Bottom View)
MOS5
Pch
14
S
MOS4
Pch
11
S
1
2
3, 18
4
5, 6, 15, 16
7
8, 13
9
10
11
12
14
17
19
20
21
22
23
MOS1
MOS1
MOS1, 6
MOS2
MOS2, 5
MOS2
MOS3, 4
MOS3
MOS3
MOS4
MOS4
MOS5
MOS5
MOS6
MOS6
MOS1, 6
MOS2, 5
MOS3, 4
Source
Gate
Drain
Source
Drain
Gate
Drain
Source
Gate
Source
Gate
Source
Gate
Source
Gate
Drain (Header)
Drain (Header)
Drain (Header)
20
G
17
G
12
G
D 3,18,21
2
G
7
G
D 5,6,15,16,22
10
G
D 8,13,23
S
1
MOS1
Nch
S
4
MOS2
Nch
S
9
MOS3
Nch
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D
(pulse)
Note1
I
AP Note3
E
AR Note3
Pch
Note2
Tch
Note4
Tstg
Value
MOS1, 2, 3 (Nch)
MOS4, 5, 6 (Pch)
40
+20 / –5
20
80
20
53
54
175
–55 to +150
–40
–20 / +5
–20
–80
–20
53
54
175
–55 to +150
Unit
V
V
A
A
A
mJ
W
C
C
Notes: 1. PW
10s duty cycle
1%
2. Tc = 25C : 1 Drive Operation.
3. Tch = 25C, Rg
50
4. AEC-Q101 compliant
Thermal Impedance Characteristics
Channel to case thermal impedance
ch-c:
2.78C/W
R07DS0338EJ0500 Rev.5.00
May 11, 2011
Page 2 of 11
RJM0404JSC
Preliminary
Electrical Characteristics
MOS1, MOS2, MOS3 (N Channel)
(Ta = 25C)
Item
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Note:
5. Pulse test
Symbol
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
17
24
1400
230
100
23
3
4
15
35
50
8
0.92
20
Max
10
10
2.5
21
34
—
—
—
—
—
—
—
—
—
—
1.2
—
Unit
A
A
V
m
m
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
V
DS
= 40 V, V
GS
= 0
V
GS
= +20 / –5 V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 10 A, V
GS
= 10 V
Note5
I
D
= 10 A, V
GS
= 4.5 V
Note5
V
DS
= 10V, V
GS
= 0,
f = 1 MHz
V
DD
= 25 V, V
GS
= 10 V,
I
D
= 20 A
V
GS
= 10 V, I
D
= 10 A,
V
DD
20 V,R
L
= 2
,
R
G
= 4.7
I
F
= 20 A, V
GS
= 0
Note5
I
F
= 20 A, V
GS
= 0
di
F
/dt = 50 A/s
MOS4, MOS5, MOS6 (P Channel)
(Ta = 25C)
Item
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Note:
6. Pulse test
Symbol
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
34
48
1500
230
140
25
5
4
30
55
50
20
–0.97
30
Max
–10
10
–2.5
42
68
—
—
—
—
—
—
—
—
—
—
–1.26
—
Unit
A
A
V
m
m
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
V
DS
= –40 V, V
GS
= 0
V
GS
= –20 / +5 V, V
DS
= 0
V
DS
= –10 V, I
D
= –1 mA
I
D
= –10 A, V
GS
= –10 V
Note6
I
D
= –10 A, V
GS
= –4.5 V
Note6
V
DS
= –10 V, V
GS
= 0,
f = 1 MHz
V
DD
= –25 V, V
GS
= –10 V,
I
D
= –20 A
V
GS
= –10 V, I
D
= –10 A,
V
DD
–20 V, R
L
=2
,
R
G
= 4.7
I
F
= –20 A, V
GS
= 0
Note6
I
F
= –20 A, V
GS
= 0
di
F
/dt = 50 A/s
R07DS0338EJ0500 Rev.5.00
May 11, 2011
Page 3 of 11
RJM0404JSC
Preliminary
Main Characteristics
MOS1, 2, 3 (Nch)
Maximum Safe Operation Area
1000
Tc = 25°C
1 shot Pulse
Typical Output Characteristics
20
10 V
Tc = 25°C
Pulse Test
2.8 V
Drain Current I
D
(A)
Drain Current I
D
(A)
100
10
μ
s
10
0
16
4.5 V
12
10
μ
s
1
s
m
1
PW = 10 ms
8
V
GS
= 2.7 V
Operation
in this area
0.1
is limited R
DS(on)
DC Operation
4
0.01
0.1
1
10
100
0
2
4
6
8
10
Drain to Source Voltage
V
DS
(V)
Drain to Source Voltage V
DS
(V)
Static Drain to Source On State Resistance vs.
Gate to Source Voltage
50
I
D
= 10 A
Pulse Test
40
Tc = 150°C
10
V
DS
= 10 V
Pulse Test
1
0.1
0.01
0.001
Tc = 150°C
25°C
−40°C
1
2
3
4
5
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
Typical Transfer Characteristics
Drain Current I
D
(A)
30
20
25°C
−40°C
10
0.0001
0
0
4
8
12
16
20
Gate to Source Voltage V
GS
(V)
Static Drain to Source State On Resistance
vs. Drain Current
1000
Tc = 25°C
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Temperature
50
I
D
= 10 A
Pulse Test
40
V
SG
=
−4.5
V
30
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
100
V
GS
= 4.5 V
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
20
−10
V
10
0
−50
10
10 V
1
1
10
100
−25
0 25 50 75 100 125 150 175
Drain Current I
D
(A)
Case Temperature Tc (°C)
R07DS0338EJ0500 Rev.5.00
May 11, 2011
Page 4 of 11
RJM0404JSC
MOS1, 2, 3(Nch)
Typical Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
10000
50
Preliminary
Dynamic Input Characteristics
V
GS
V
DD
= 25 V
10 V
5V
16
Capacitance C (pF)
40
V
DS
30
Ciss
1000
12
Coss
100
Tc = 25°C
V
GS
= 0
f = 1 MHz
10
0
10
20
30
40
Crss
20
V
DD
= 25 V
10 V
5V
8
16
24
32
8
10
4
0
40
0
Drain to Source Voltage V
DS
(V)
Gate Charge Qg (nc)
Reverse Drain Current vs.
Source to Drain Voltage
Repetitive Avalanche Energy E
AR
(mJ)
20
Avalanche Energy vs.
Channel Temperature Derating
100
80
60
40
20
0
25
I
AP
= 20 A
V
DD
= 25 V
duty < 0.1 %
Rg
≥
50
Ω
Reverse Drain Current I
DR
(A)
Tc = 25°C
Pulse Test
15
10
V
GS
= 0 V,
−5
V
5
10 V
0
0.4
0.8
1.2
1.6
2.0
50
75
100 125 150 175
Source to Drain Voltage V
SD
(V)
Channel Temperature Tch (°C)
Avalanche Test Circuit
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
Avalanche Waveform
1
2
L
•
IAP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
Rg
D. U. T
V
DD
I
AP
V
DS
Vin
15 V
50
Ω
I
D
0
V
DD
R07DS0338EJ0500 Rev.5.00
May 11, 2011
Page 5 of 11
Gate to Source Voltage V
GS
(V)
Tc = 25°C
I
D
= 20 A
20
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