Preliminary
Datasheet
RJL5012DPE
Silicon N Channel MOS FET
High Speed Power Switching
Features
Built-in fast recovery diode
Low on-resistance
R
DS(on)
= 0.56
typ. (at I
D
= 6 A, V
GS
= 10 V, Ta = 25
C)
Low leakage current
High speed switching
R07DS0435EJ0200
(Previous: REJ03G1745-0100)
Rev.2.00
Jun 14, 2011
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
D
4
1. Gate
2. Drain
3. Source
4. Drain
1
G
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
3. STch = 25C, Tch
150C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
APNote3
E
ARNote3
Note2
Pch
ch-c
Tch
Tstg
Ratings
500
30
12
36
12
36
3
0.5
100
1.25
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0435EJ0200 Rev.2.00
Jun 14, 2011
Page 1 of 6
RJL5012DPE
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
500
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.56
1050
115
14
27
22
78
15
27.8
4.9
14.4
0.96
140
Max
—
10
±0.1
4.0
0.70
—
—
—
—
—
—
—
—
—
—
1.60
—
Unit
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 500 V, V
GS
= 0
V
GS
=
30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 6 A, V
GS
= 10 V
Note4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 6 A
V
GS
= 10 V
R
L
= 41.7
Rg = 10
V
DD
= 400 V
V
GS
= 10 V
I
D
= 12 A
I
F
= 12 A, V
GS
= 0
Note4
I
F
= 12 A, V
GS
= 0
di
F
/dt = 100 A/s
R07DS0435EJ0200 Rev.2.00
Jun 14, 2011
Page 2 of 6
RJL5012DPE
Preliminary
Main Characteristics
Maximum Safe Operation Area
100
10
Typical Output Characteristics
20
Ta = 25°C
Pulse Test
5.8 V
6V
Drain Current I
D
(A)
10
0
μ
Drain Current I
D
(A)
10
PW
μ
s
=
16
10 V
5.6 V
5.4 V
s
1
Operation in this
area is limited by
R
DS(on)
12
5.2 V
0.1
8
5V
0.01
Tc = 25°C
1 shot
0.001
0.1
1
4
4.8 V
V
GS
= 4.6 V
10
100
1000
0
0
4
8
12
16
20
Drain to Source Voltage V
DS
(V)
Drain to Source Voltage V
DS
(V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
10
V
GS
= 10 V
Ta = 25°C
Pulse Test
Typical Transfer Characteristics
100
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
10
1
Tc = 75°C
25°C
1
0.1
−25°C
0.01
0
2
4
6
8
10
0.1
0.1
1
10
100
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
V
GS
= 10 V
Pulse Test
1.6
I
D
= 12 A
1.2
3A
6A
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Body-Drain Diode Reverse
Recovery Time (Typical)
1000
Reverse Recovery Time trr (ns)
2.0
100
0.8
0.4
di / dt = 100 A /
μs
V
GS
= 0, Ta = 25°C
10
0.1
1
10
100
0
-25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Reverse Drain Current I
DR
(A)
R07DS0435EJ0200 Rev.2.00
Jun 14, 2011
Page 3 of 6
RJL5012DPE
Typical Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
10000
Preliminary
Dynamic Input Characteristics (Typical)
I
D
= 12 A
Ta = 25
°C
V
DD
= 400 V
250 V
100 V
V
DS
V
GS
Capacitance C (pF)
1000
Ciss
600
12
100
Coss
400
8
10
V
GS
= 0
f = 1 MHz
Ta = 25°C
50
100
150
Crss
200
V
DD
= 400 V
250 V
100 V
8
16
24
32
4
1
0
200
250
0
0
0
40
Drain to Source Voltage V
DS
(V)
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage V
GS(off)
(V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
20
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5
V
DS
= 10 V
Reverse Drain Current I
DR
(A)
16
V
GS
= 0 V
Ta = 25
°C
Pulse Test
4
12
3
I
D
= 10 mA
1 mA
0.1 mA
8
4
2
1
0
0.4
0.8
1.2
1.6
2.0
0
-25
0
25
50
75
100 125 150
Source to Drain Voltage V
SD
(V)
Case Temperature
Tc (°C)
R07DS0435EJ0200 Rev.2.00
Jun 14, 2011
Page 4 of 6
Gate to Source Voltage V
GS
(V)
800
16
RJL5012DPE
Normalized Transient Thermal Impedance vs. Pulse Width
3
Normalized Transient Thermal Impedance
γ
s (t)
Preliminary
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
θch
– c(t) =
γs
(t) •
θch
– c
θch
– c = 1.25°C/W, Tc = 25°C
P
DM
PW
T
0.03
0.02
1
e
0.0
puls
ot
sh
1
100
μ
1m
10 m
Pulse Width
D=
PW
T
0.01
10
μ
100 m
PW (s)
1
10
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 250 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(off)
tf
90%
td(on)
tr
R07DS0435EJ0200 Rev.2.00
Jun 14, 2011
Page 5 of 6
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
