Preliminary
Datasheet
RJK6024DPE
600V - 0.4A - MOS FET
High Speed Power Switching
Features
Low on-resistance
R
DS(on)
= 28
typ. (at I
D
= 0.2 A, V
GS
= 10 V, Ta = 25C)
Low leakage current
High speed switching
R07DS0424EJ0200
Rev.2.00
Feb 27, 2012
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
D
4
1. Gate
2. Drain
3. Source
4. Drain
1
G
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
Pch
Note2
ch-c
Tch
Tstg
Ratings
600
30
0.4
0.6
0.4
0.6
20
6.25
150
–55 to +150
Unit
V
V
A
A
A
A
W
C/W
C
C
R07DS0424EJ0200 Rev.2.00
Feb 27, 2012
Page 1 of 6
RJK6024DPE
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
600
—
—
3
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
28
37.5
7.5
0.9
30
14.5
48
77
4.3
0.5
3.2
0.85
230
Max
—
1
±0.1
5
42
—
—
—
—
—
—
—
—
—
—
1.45
—
Unit
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 600 V, V
GS
= 0
V
GS
=
30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 0.2 A, V
GS
= 10 V
Note3
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 0.2 A
V
GS
= 10 V
R
L
= 1500
Rg = 10
V
DD
= 480 V
V
GS
= 10 V
I
D
= 0.4 A
I
F
= 0.4 A, V
GS
= 0
Note3
I
F
= 0.4 A, V
GS
= 0
di
F
/dt = 50 A/s
Notes: 3. Pulse test
4. Since this device is equipped with high voltage FET chip (V
DSS
600
V), high voltage may be supplied.
Therefore, please be sure to confirm about Electric discharge between Drain terminal and other terminal.
5. This device is sensitive to electrostatic discharge.
It is recommended to adopt appropriate cautions when handling this product.
R07DS0424EJ0200 Rev.2.00
Feb 27, 2012
Page 2 of 6
RJK6024DPE
Preliminary
Main Characteristics
Maximum Safe Operation Area
10
Tc = 25°C
1 shot
0.6
0.5
0.4
0.3
0.2
0.1
0
Ta = 25°C
Pulse Test
8, 10 V
6V
5.6 V
5.8 V
Typical Output Characteristics
I
D
(A)
1
10
μ
s
Drain Current
0.1
Drain Current
I
D
(A)
PW
=
10
0
Operation in this
area is limited by
R
DS(on)
1
10
100
5.4 V
μ
s
5.2 V
V
GS
= 5 V
0.01
0.001
0.1
1000
0
4
8
12
16
20
Drain to Source Voltage
V
DS
(V)
Drain to Source Voltage
V
DS
(V)
Typical Transfer Characteristics
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
1
V
DS
= 10 V
Pulse Test
Tc =
−25°C
1000
V
GS
= 10 V
Ta = 25°C
Pulse Test
I
D
(A)
Drain Current
25°C
0.1
75°C
100
0.01
0
2
4
6
8
10
10
0.01
0.1
1
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
80
V
GS
= 10 V
Pulse Test
60
I
D
= 0.4 A
40
0.2 A
0.1 A
20
Body-Drain Diode Reverse
Recovery Time (Typical)
Reverse Recovery Time trr (ns)
1000
100
di / dt = 50 A /
μs
V
GS
= 0, Ta = 25°C
10
0.1
1
10
0
-25
0
25
50
75
100 125 150
Case Temperature
Tc (°C)
Reverse Drain Current
I
DR
(A)
R07DS0424EJ0200 Rev.2.00
Feb 27, 2012
Page 3 of 6
RJK6024DPE
Typical Capacitance vs.
Drain to Source Voltage (Typical)
Drain to Source Voltage V
DS
(V)
100
Ciss
Preliminary
Dynamic Input Characteristics (Typical)
V
GS
600
V
DS
400
10
Coss
V
DD
= 480 V
300 V
100 V
12
8
1
V
GS
= 0
f = 1 MHz
Ta = 25°C
50
100
150
200
Crss
200
V
DD
= 480 V
300 V
100 V
2
4
6
8
4
0.1
0
250
300
0
0
0
10
Drain to Source Voltage V
DS
(V)
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage V
GS(off)
(V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
0.6
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5.0
V
DS
= 10 V
4.5
4.0
3.5
3.0
0.1 mA
2.5
2.0
-25
Reverse Drain Current I
DR
(A)
0.5
0.4
0.3
0.2
0.1
0
0
V
GS
= 0 V
Ta = 25
°C
Pulse Test
I
D
= 10 mA
1 mA
0.4
0.8
1.2
1.6
0
25
50
75
100 125 150
Source to Drain Voltage V
SD
(V)
Case Temperature
Tc (°C)
R07DS0424EJ0200 Rev.2.00
Feb 27, 2012
Page 4 of 6
Gate to Source Voltage V
GS
(V)
800
I
D
= 0.4 A
Ta = 25
°C
16
Capacitance C (pF)
RJK6024DPE
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
10
Tc = 25°C
Preliminary
1
D=1
0.5
0.2
0.1
0.05
θ
ch – c (t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 6.25
°
C/W, Tc = 25
°
C
P
DM
PW
T
0.1
1 shot pulse
D=
PW
T
0.02
0.01
10μ
100μ
1m
10m
100m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 300 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0424EJ0200 Rev.2.00
Feb 27, 2012
Page 5 of 6
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