SiR878ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L =0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
Limit
100
± 20
40
32
13.3
b, c
10.6
b, c
80
40
4.5
b, c
20
20
44.5
28.5
5
b, c
3.2
b, c
- 55 to 150
260
Unit
V
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
I
DM
I
S
I
AS
E
AS
P
D
A
mJ
Maximum Power Dissipation
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
b, f
t
10 s
Maximum Junction-to-Ambient
°C/W
R
thJC
Steady State
Maximum Junction-to-Case (Drain)
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
Document Number: 63369
S11-1999-Rev. B, 10-Oct-11
www.vishay.com
1
Symbol
R
thJA
Typical
20
2.1
Maximum
25
2.8
Unit
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiR878ADP
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 4 A
0.76
36
38
22
14
T
C
= 25 °C
40
80
1.1
70
76
A
V
ns
nC
ns
C
iss
C
oss
C
rss
V
DS
= 50 V, V
GS
= 10 V, I
D
= 10 A
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 50 V, R
L
= 5
I
D
10 A, V
GEN
= 7.5 V, R
g
= 1
V
DD
= 50 V, R
L
= 5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DS
= 50 V, V
GS
= 0 V
f = 1 MHz
0.2
V
DS
= 50 V, V
GS
= 7.5 V, I
D
= 10 A
V
DS
= 50 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
1275
500
38
27.9
21.6
13.9
4.2
6.3
40
1.05
10
11
25
8
12
13
25
8
60
2.1
20
22
50
16
24
26
50
16
ns
42
33
21
nC
pF
a
Symbol
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
Test Conditions
V
GS
= 0, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 100 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
V
GS
= 7.5 V, I
D
= 12 A
V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 10 V, I
D
= 15 A
Min.
100
Typ.
Max.
Unit
V
64
- 5.8
1.2
2.8
± 100
1
10
30
0.011
0.012
0.014
44
0.014
0.0148
0.018
mV/°C
V
nA
µA
A
S
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 63369
S11-1999-Rev. B, 10-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiR878ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
80
V
GS
= 10 V thru 5 V
64
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
48
V
GS
= 4 V
32
6
T
C
= 25
°C
4
16
V
GS
= 3 V
0
0.0
0.5
1.0
1.5
2
T
C
= 125
°C
T
C
= - 55
°C
0
1
2
3
4
5
V
GS
= 2 V
2.0
2.5
0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.025
1800
C
iss
0.021
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
1440
C
oss
1080
Transfer Characteristics
0.017
V
GS
= 4.5 V
V
GS
= 7.5 V
0.013
V
GS
= 10 V
0.009
720
360
C
rss
0.005
0
16
32
48
64
80
I
D
- Drain Current (A)
0
0
20
40
60
80
100
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 10 A
R
DS(on)
- On-Resistance (Normalized)
V
GS
- Gate-to-Source Voltage (V)
8
1.7
V
DS
= 50 V
2.0
I
D
= 15 A
Capacitance
V
GS
= 10 V
6
V
DS
= 25 V
4
1.4
V
GS
= 4.5 V
1.1
V
DS
= 75 V
2
0.8
0
0
6
12
18
Q
g
- Total Gate Charge (nC)
24
30
0.5
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63369
S11-1999-Rev. B, 10-Oct-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiR878ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.05
I
D
= 15 A
10
I
S
- Source Current (A)
R
DS(on)
- On-Resistance (Ω)
T
J
= 150
°C
T
J
= 25 °C
0.04
1
0.03
T
J
= 125
°C
0.02
0.1
0.01
0.01
T
J
= 25
°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
0.00
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.4
On-Resistance vs. Gate-to-Source Voltage
200
0.2
V
GS(th)
- Variance (V)
160
0
I
D
= 5 mA
Power (W)
150
120
- 0.2
80
- 0.4
I
D
= 250 μA
- 0.6
40
- 0.8
- 50
- 25
0
25
50
75
100
125
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
I
DM
Limited
Single Pulse Power, Junction-to-Ambient
100 μs
10
I
D
- Drain Current (A)
I
D
Limited
1 ms
1
Limited by R
DS(on)
*
0.1
T
A
= 25
°C
Single Pulse
0.01
0.01
10 ms
100 ms
1s
10 s
BVDSS Limited
100
DC
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 63369
S11-1999-Rev. B, 10-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiR878ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
45
36
I
D
- Drain Current (A)
27
18
9
0
0
25
50
75
100
125
T
C
- Case Temperature (°C)
150
Current Derating*
55
2.5
44
2.0
Power (W)
Power (W)
33
1.5
22
1.0
11
0.5
0
0
25
50
75
100
125
T
C
- Case Temperature (°C)
150
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63369
S11-1999-Rev. B, 10-Oct-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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