SiR870ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T
C
= 25 °C
T
A
= 25 °C
L =0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
T
J
, T
stg
I
DM
I
S
I
AS
E
AS
I
D
Symbol
V
DS
V
GS
Limit
100
± 20
60
a
60
a
23.3
b, c
18.2
b, c
100
60
a
5.6
b, c
40
80
104
66.6
6.25
b, c
4
b, c
- 55 to 150
260
A
Unit
V
mJ
Maximum Power Dissipation
P
D
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum
Maximum Junction-to-Case (Drain)
Junction-to-Ambient
b, f
t
10 s
Steady State
Symbol
R
thJA
R
thJC
Typical
15
0.9
Maximum
20
1.2
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 54 °C/W.
Document Number: 63657
S11-2378-Rev. A, 28-Nov-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiR870ADP
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 20 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 5 A
0.74
54
76
27
27
T
C
= 25 °C
60
100
1.1
100
140
A
V
ns
nC
ns
C
iss
C
oss
C
rss
V
DS
= 50 V, V
GS
= 10 V, I
D
= 20 A
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 50 V, R
L
= 2.5
I
D
20 A, V
GEN
= 7.5 V, R
g
= 1
V
DD
= 50 V, R
L
= 2.5
I
D
20 A, V
GEN
= 10 V, R
g
= 1
V
DS
= 50 V, V
GS
= 0 V
f = 1 MHz
0.3
V
DS
= 50 V, V
GS
= 7.5 V, I
D
= 20 A
V
DS
= 50 V, V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
2866
719
66
53.5
41
25.2
10
10.6
69
1
13
14
35
9
17
15
33
9
104
2
26
28
70
18
34
30
65
18
ns
80
62
38
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 100 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 7.5 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 15 A
V
DS
= 10 V, I
D
= 20 A
30
0.0055
0.0058
0.0075
68
0.0066
0.0070
0.0105
S
1.5
100
56
-6
3
± 100
1
10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 63657
S11-2378-Rev. A, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiR870ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
80
V
GS
= 10 V thru 5 V
64
I
D
- Drain Current (A)
V
GS
= 4 V
I
D
- Drain Current (A)
8
10
48
6
T
C
= 25
°C
32
4
16
V
GS
= 3 V
0
0.0
2
T
C
= 125
°C
T
C
= - 55
°C
0
1
2
3
4
5
0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.010
4600
Transfer Characteristics
0.009
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
3680
C
iss
2760
0.008
V
GS
= 4.5 V
0.007
V
GS
= 7.5 V
1840
0.006
920
C
rss
100
0
0
C
oss
0.005
0
20
40
60
I
D
- Drain Current (A)
V
GS
= 10 V
80
20
40
60
80
V
DS
- Drain-to-Source Voltage (V)
100
On-Resistance vs. Drain Current
10
I
D
= 20 A
V
GS
- Gate-to-Source Voltage (V)
8
R
DS(on)
- On-Resistance (Normalized)
2.1
I
D
= 20 A
Capacitance
V
GS
= 10 V
V
DS
= 50 V
1.8
6
V
DS
= 25 V
4
V
DS
= 75 V
1.5
V
GS
= 4.5 V
1.2
2
0.9
0
0
12
24
36
48
Q
g
- Total Gate Charge (nC)
60
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63657
S11-2378-Rev. A, 28-Nov-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiR870ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.05
10
I
S
- Source Current (A)
0.04
R
DS(on)
- On-Resistance (Ω)
T
J
= 150
°C
T
J
= 25 °C
I
D
= 20 A
1
0.03
0.1
0.02
T
J
= 125
°C
0.01
T
J
= 25
°C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.00
0
2
4
6
8
V
GS
- Gate-to-Source Voltage (V)
10
V
SD
- Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.5
200
On-Resistance vs. Gate-to-Source Voltage
0.2
V
GS(th)
Variance (V)
160
I
D
= 5 mA
- 0.4
I
D
= 250 μA
- 0.7
Power (W)
150
- 0.1
120
80
40
- 1.0
- 50
- 25
0
25
50
75
100
125
0
0.001
0.01
T
J
- Temperature (°C)
0.1
Time (s)
1
10
Threshold Voltage
100
I
DM
Limited
Single Pulse Power, Junction-to-Ambient
10
I
D
- Drain Current (A)
1 ms
I
D
Limited
10 ms
1
100 ms
Limited by R
DS(on)
*
0.1
T
A
= 25 °C
Single Pulse
0.01
0.01
0.1
1
1s
10 s
BVDSS Limited
10
DC
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 63657
S11-2378-Rev. A, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiR870ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
105
84
I
D
- Drain Current (A)
63
Package Limited
42
21
0
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
Current Derating*
125
3.0
100
2.4
50
Power (W)
0
25
50
75
100
125
150
Power (W)
75
1.8
1.2
25
0.6
0
T
C
- Case Temperature (°C)
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63657
S11-2378-Rev. A, 28-Nov-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
For healthcare professionals, accurate diagnosis and treatment are crucial for a clear picture of a person's health. However, healthcare professionals often rely on tests at medical facilities, cli...[详细]
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