Preliminary
Datasheet
RJK60S4DPP-E0
600V - 16A - SJ MOS FET
High Speed Power Switching
Features
•
Superjunction MOSFET
•
Low on-resistance
R
DS(on)
= 0.23
Ω
typ. (at I
D
= 8 A, V
GS
= 10 V, Ta = 25°C)
•
High speed switching
t
f
= 21 ns typ. (at I
D
= 8 A, V
GS
= 10 V, R
L
= 37.5
Ω,
Rg = 10
Ω,
Ta = 25°C)
R07DS0638EJ0100
Rev.1.00
Apr 23, 2012
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
D
G
1. Gate
2. Drain
3. Source
1
2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Tc = 25°C
Tc = 100°C
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Limited by Tch max.
2. Value at Tc = 25°C
Symbol
V
DSS
V
GSS
I
D Note1
I
D Note1
I
D (pulse)Note1
I
DR Note1
I
DR (pulse) Note1
Pch
θch-c
Tch
Tstg
Note2
Ratings
600
+30,
−20
16
10.1
32
16
32
29.9
4.17
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
R07DS0638EJ0100 Rev.1.00
Apr 23, 2012
Page 1 of 6
RJK60S4DPP-E0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state resistance
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
R
DS(on)
Rg
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
I
rr
Q
rr
Min
600
—
—
3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.23
0.57
2.5
1020
1440
5.5
26
22
44
21
17.5
6
6
1.0
380
23
4.9
Max
—
1
±0.1
5
0.29
—
—
—
—
—
—
—
—
—
—
—
—
1.6
—
—
—
Unit
V
mA
μA
V
Ω
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
A
μC
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 600 V, V
GS
= 0
V
GS
= +30V,
−20
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 8 A, V
GS
= 10 V
Note3
Ta = 150°C
Note3
I
D
= 8 A, V
GS
= 10 V
f = 1 MHz
V
DS
= 25 V, V
GS
= 0
V
DS
= 25 V
V
GS
= 0
f = 100kHz
I
D
= 8 A
V
GS
= 10 V
R
L
= 37.5
Ω
Note3
Rg = 10
Ω
V
DD
= 480 V
V
GS
= 10 V
Note3
I
D
= 16 A
I
F
= 16 A, V
GS
= 0
Note3
I
F
= 16 A
V
GS
= 0
Note3
di
F
/dt = 100 A/μs
Gate resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Body-drain diode reverse recovery current
Body-drain diode reverse recovery charge
Notes: 3. Pulse test
R07DS0638EJ0100 Rev.1.00
Apr 23, 2012
Page 2 of 6
RJK60S4DPP-E0
Preliminary
Main Characteristics
Channel Dissipation vs.
Case Temperature
40
30
25
20
15
Ta = 25°C
Pulse Test
Typical Output Characteristics
Channel Dissipation Pch (W)
30
I
D
(A)
10 V
15 V
8V
7V
20
Drain Current
6.5 V
10
10
6V
5
0
V
GS
= 5.5 V
0
2
4
6
8
10
0
0
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
20
Ta = 125°C
Pulse Test
100
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
I
D
(A)
Drain Current I
D
(A)
16
6.5 V
8V 7V
10 V
15 V
6V
10
12
Drain Current
1
Tc = 75°C
25°C
8
5.5 V
4
0.1
−25°C
V
GS
= 5 V
0.01
0
2
4
6
8
10
0
2
4
6
8
10
0
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
10
V
GS
= 10 V
Pulse Test
Static Drain to Source on State Resistance
vs. Temperature (Typical)
1.0
V
GS
= 10 V
Pulse Test
0.8
I
D
= 16 A
Ta = 125°C
1
25°C
0.6
0.4
8A
4A
0.2
0.1
1
10
100
0
−25
0
25
50
75
100 125 150
Drain Current
I
D
(A)
Case Temperature
Tc (°C)
R07DS0638EJ0100 Rev.1.00
Apr 23, 2012
Page 3 of 6
RJK60S4DPP-E0
Body-Drain Diode Reverse
Recovery Time (Typical)
Reverse Recovery Time trr (ns)
1
100000
10000
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 100 kHz
Ta = 25°C
Capacitance C (pF)
1000
100
10
Ciss
0.1
Coss
Crss
1
0.1
di/dt = 100 A/μs
V
GS
= 0, Ta = 25°C
0.01
1
10
100
0
50
100
150
200
250
300
Reverse Drain Current I
DR
(A)
Drain to Source Voltage
V
DS
(V)
C
OSS
Stored Energy (Typical)
V
DS
(V)
3.0
2.5
2.0
1.5
1.0
0.5
0
0
50
100
150
200
250
300
Dynamic Input Characteristics (Typical)
V
GS
600
V
DS
400
V
DD
= 480 V
300 V
100 V
12
Drain to Source Voltage
8
200
V
DD
= 480 V
300 V
100 V
8
16
4
I
D
= 10 A
Ta = 25°C
24
32
0
0
0
Drain to Source Voltage
V
DS
(V)
Gate Charge
Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
100
6
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
I
DR
(A)
Gate to Source Cutoff Voltage
V
GS(off)
(V)
5
4
3
2
1
V
DS
= 10 V
0
−25
0
25
I
D
= 10 mA
Reverse Drain Current
10
Ta = 125°C
1 mA
0.1 mA
1
25°C
V
GS
= 0
Pulse Test
0.1
0
0.4
0.8
1.2
1.6
50
75
100 125 150
Source to Drain Voltage
V
SD
(V)
Case Temperature
Tc (°C)
R07DS0638EJ0100 Rev.1.00
Apr 23, 2012
Page 4 of 6
Gate to Source Voltage
E
OSS
(μJ)
V
GS
(V)
800
16
RJK60S4DPP-E0
Drain to Source Breakdown Voltage
vs. Case Temperature (Typical)
Drain to Source Breakdown Voltage
V
(BR)DSS
(V)
800
Preliminary
700
600
500
I
D
= 10 mA
V
GS
= 0
400
−25
0
25
50
75
100 125 150
Case Temperature
Tc (°C)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 300 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0638EJ0100 Rev.1.00
Apr 23, 2012
Page 5 of 6
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