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RJK0222DNS

产品描述Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
文件大小59KB,共5页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
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RJK0222DNS概述

Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

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Preliminary Datasheet
RJK0222DNS
Silicon N Channel Power MOS FET with Schottky Barrier Diode
High Speed Power Switching
R07DS0125EJ0030
(Previous: REJ03G1951-0020)
Rev.0.30
Sep 06, 2010
Features
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008JD-A
(Package name: HWSON3046-8 Dual)
2 3 4
D1 D1 D1
9
S1/D2
5
6
7
8
5 6 7 8
1
G1
8
G2
9
4 3 2 1
4
S2 S2 S2
5 6 7
3
2
1
(Bottom View)
1, 8
Gate
2, 3, 4, 9 Drain
5, 6, 7, 9 Source
MOS1
MOS2 and
Schottky Barrier Diode
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
Tch
Tstg
Note1
MOS1
25
±20
14
56
14
5
3.1
8
150
–55 to +150
MOS2
25
±12
16
64
16
8
8.0
10
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°
C
°
C
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50

3. Tc = 25C
R07DS0125EJ0030 Rev.0.30
Sep 06, 2010
Page 1 of 4

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描述 Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

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