TS861, TS862, TS864
Rail-to-rail micropower BiCMOS comparators
Datasheet
−
production data
Features
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SOT23-5
Ultra low current consumption (6 µA/comp.
at V
CC
= 2.7 V)
Rail-to-rail CMOS inputs
Push-pull outputs
Supply operation from 2.7 to 10 V
Low propagation delay
ESD protection (2 kV)
Latch-up immunity (class A)
Available in SOT23-5 micropackage, SO-8,
SO-14,TSSOP8, and TSSOP14 package
NC 1
Inverting input 2
Non-inverting input 3
Vcc- 4
-
-
-
Output
Vcc-
Non-inverting input
1
2
3
5
Vcc+
+
-
4
Inverting input
SO-8 (single)
8
7
6
NC
Vcc+
Output
+
+
+
5 NC
Applications
■
■
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Battery powered systems such as alarms
Portable communication systems
Smoke/gas/fire detectors
Portable computers
SO-8, TSSOP8 (dual)
Output 1
Inverting input 1
Non-inverting input 1
1
2
3
4
-
-
-
-
+
+
8
7
6
5
Vcc+
Output 2
Inverting input 2
Non-inverting input 2
Description
The TS86x device (single, dual and quad) is
a rail-to-rail comparator characterized for 2.7 to
10 V operation over -40 °C to +85 °C temperature
ranges. It exhibits an excellent speed-to-power
ratio, featuring a current consumption of 6
μA
per
comparator and a response time of 500 ns
at 2.7 V for a 100 mV overdrive.
Due to its ultra low power consumption and its
availability in a tiny package, the TS86x
comparator family is perfectly suited to battery-
powered systems. The output stage is designed
with a push-pull structure allowing a direct
connection to the microcontroller without
additional pull-up resistors.
Vcc-
SO-14, TSSOP14 (quad)
Output 2
Output 1
1
2
14
13
12
+
-
-
-
Output 3
Output 4
Vcc-
Vcc+ 3
Inverting input 1
Non-inverting input 1
Inverting input 2
Non-inverting input 2
4
5
6
7
11 Non-inverting input 4
10
9
8
Inverting input 4
Non-inverting input 3
Inverting input 3
November 2012
This is information on a product in full production.
Doc ID 6422 Rev 3
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Absolute maximum ratings and operating conditions
TS861, TS862, TS864
1
Absolute maximum ratings and operating conditions
Table 1.
Symbol
V
CC
V
ID
V
IN
Supply voltage
(1)
Differential input voltage
(2)
Input voltage range
(3)
Thermal resistance junction-to-ambient
(4)
SOT23-5
SO-8
SO-14
TSSOP8
TSSOP14
Thermal resistance junction-to-case
(4)
SOT23-5
SO-8
SO-14
TSSOP8
TSSOP14
Storage temperature range
Maximum junction temperature
Lead temperature (soldering, 10 sec.)
Human body model (HBM)
(5)
Machine model (MM)
(6)
Latch-up immunity
Absolute maximum ratings
Parameter
Value
12
±12
-0.3 to 12.3
250
125
105
120
100
81
40
31
37
32
-65 to +150
150
260
2
200
Class A
Unit
V
V
V
R
THJA
°C/W
R
THJC
°C/W
T
STG
T
J
T
LEAD
ESD
°C
°C
°C
kV
V
1. All voltages values, except differential voltage are with respect to network terminal.
2. Differential voltages are non-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of input and output voltages must never exceed V
CC
+0.3 V.
4. Short-circuits can cause excessive heating. These values are typical.
5. Human body model: a 100 pF capacitor is charged to the specified voltage, then discharged through
a 1.5 kΩ resistor between two pins of the device. This is done for all couples of connected pin
combinations while the other pins are floating.
6. Machine model: a 200 pF capacitor is charged to the specified voltage, then discharged directly between
two pins of the device with no external series resistor (internal resistor < 5
Ω).
This is done for all couples of
connected pin combinations while the other pins are floating.
Table 2.
Symbol
V
CC
V
ICM
T
Oper
Operating conditions
Parameter
Supply voltage
Common mode input voltage range
Operating free air temperature range
Value
2.7 to 10
V
CC-
- 0.3 to V
CC+
+ 0.3
-40 to + 85
Unit
V
V
°C
2/19
Doc ID 6422 Rev 3
TS861, TS862, TS864
Electrical characteristics
2
Electrical characteristics
Table 3.
Symbol
Input offset voltage
TS861/2/4
T
min
< T < T
max
TS861/2/4A
T
min
< T < T
max
Input offset voltage drift
Input offset current
(1)
T
min
< T < T
max
Input bias current
(1)
T
min
< T < T
max
High level output voltage
I
SOURCE
= 2.5 mA
T
min
< T < T
max
Low level output voltage
I
SINK
= 2.5 mA
T
min
< T < T
max
Large signal voltage gain
(2)
Common mode rejection ratio
0 < V
ICM
< 2.7 V
Supply voltage rejection ratio
0 < V
CC
< 10 V
Supply current per comparator
No load, output low
No load, output high
Propagation delay from output low to output high
V
ICM
= 1.35 V, f = 10 kHz, C
L
= 50 pF
Overdrive = 10 mV
Overdrive = 100 mV
Propagation delay from output high to output low
V
ICM
= 1.35 V, f = 10 kHz, C
L
= 50 pF
Overdrive = 10 mV
Overdrive = 100 mV
2.35
2.15
Electrical characteristics at V
CC
= 2.7 V, T
amb
= 25 °C
(unless otherwise specified)
Parameter
Min.
Typ.
Max.
Unit
3
3
6
1
1
V
IO
15
18
7
10
mV
ΔV
IO
I
IO
I
IB
μV/°C
150
300
300
600
pA
pA
V
OH
2.45
V
V
OL
A
VD
CMR
SVR
0.2
240
65
80
0.35
0.45
V
dB
dB
dB
I
CC
6
8
12
14
μA
T
PLH
1.5
0.6
µs
T
PHL
1.5
0.5
µs
Doc ID 6422 Rev 3
3/19
Electrical characteristics
Table 3.
Symbol
T
F
T
R
TS861, TS862, TS864
Electrical characteristics at V
CC
= 2.7 V, T
amb
= 25 °C
(unless otherwise specified) (continued)
Parameter
Fall time
f = 10 kHz, C
L
= 50 pF, overdrive = 100 mV
Rise time
f = 10 kHz, C
L
= 50 pF, overdrive = 100 mV
Min.
Typ.
Max.
Unit
20
20
ns
ns
1. Maximum values including unavoidable inaccuracies of the industrial tests.
2. Design evaluation.
Note:
Limits are 100% production tested at 25 °C. Limits over temperature are guaranteed through
correlation and by design.
4/19
Doc ID 6422 Rev 3
TS861, TS862, TS864
Table 4.
Symbol
Input offset voltage
TS861/2/4
T
min
< T < T
max
TS861/2/4A
T
min
< T < T
max
Input offset voltage drift
Input offset current
(1)
T
min
< T < T
max
Input bias current
(1)
T
min
< T < T
max
High level output voltage
I
SOURCE
= 5 mA
T
min
< T < T
max
Low level output voltage
I
SINK
= 5 mA
T
min
< T < T
max
Large signal voltage gain
(2)
Common mode rejection ratio
0 < V
ICM
< 5 V
Supply voltage rejection ratio
2.7 < V
CC
< 10 V
Supply current per comparator
No load, output low
No load, output high
Propagation delay from output low to output high
V
ICM
= 2.5 V, f = 10 kHz, C
L
= 50 pF
Overdrive = 10 mV
Overdrive = 100 mV
Propagation delay from output high to output low
V
ICM
= 2.5 V, f = 10 kHz, C
L
= 50 pF
Overdrive = 10 mV
Overdrive = 100 mV
Fall time
f = 10 kHz, C
L
= 50 pF, overdrive = 100 mV
Rise time
f = 10 kHz, C
L
= 50 pF, overdrive = 100 mV
Electrical characteristics
Electrical characteristics at V
CC
= 5 V, T
amb
= 25 °C
(unless otherwise specified)
Parameter
Min.
Typ.
Max.
Unit
3
3
6
1
1
V
IO
15
18
7
10
mV
ΔV
IO
I
IO
I
IB
μV/°C
150
300
300
600
pA
pA
V
OH
4.6
4.45
4.8
V
V
OL
A
VD
CMR
SVR
0.2
240
70
80
6
8
0.4
0.55
V
dB
dB
dB
I
CC
12
14
μA
T
PLH
2
0.5
µs
T
PHL
2
0.4
20
20
µs
T
F
T
R
ns
ns
1. Maximum values including unavoidable inaccuracies of the industrial test.
2. Design evaluation.
Note:
Limits are 100% production tested at 25 °C. Limits over temperature are guaranteed through
correlation and by design.
Doc ID 6422 Rev 3
5/19
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