Preliminary
Datasheet
RJK60S7DPP-E0
600V -30A - SJ MOS FET
High Speed Power Switching
Features
Superjunction MOSFET
Low on-resistance
R
DS(on)
= 0.100
typ. (at I
D
= 15 A, V
GS
= 10 V, Ta = 25C)
High speed switching
tf = 15 ns typ. (at I
D
= 15 A, V
GS
= 10 V, R
L
= 20
,
Rg = 10
,
Ta = 25C)
R07DS0643EJ0100
Rev.1.00
Apr 23, 2012
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
D
G
1. Gate
2. Drain
3. Source
1
2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Tc = 25C
Tc = 100C
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Limited by Tch max.
2. Value at Tc = 25C
3. STch = 25C, Tch
150C
Symbol
V
DSS
V
GSS
I
D Note1
I
D Note1
I
D (pulse)Note1
I
DR Note1
I
DR (pulse) Note1
I
APNote3
E
AR
Pch
Note2
ch-c
Tch
Tstg
Note3
Ratings
600
+30,
20
30
19
60
30
60
7.5
3.05
34.7
3.6
150
–55 to +150
Unit
V
V
A
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0643EJ0100Rev.1.00
Apr 23, 2012
Page 1 of 6
RJK60S7DPP-E0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Gate resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Body-drain diode reverse recovery
current
Body-drain diode reverse recovery
charge
Notes: 4
Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
R
DS(on)
Rg
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
I
rr
Q
rr
Min
600
—
—
3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.100
0.25
1.7
2300
3000
10
27
28
55
9
39
15
11
1.0
490
26
7.1
Max
—
1
±0.1
5
0.125
—
—
—
—
—
—
—
—
—
—
—
—
1.6
—
—
—
Unit
V
mA
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
A
C
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 600 V, V
GS
= 0
V
GS
= +30V,
20
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 15 A, V
GS
= 10 V
Note4
Ta = 150°C
Note4
I
D
= 15 A, V
GS
= 10 V
f = 1 MHz
V
DS
= 25 V, V
GS
= 0
V
DS
= 25 V
V
GS
= 0
f = 100 kHz
I
D
= 15 A
V
GS
= 10 V
R
L
= 20
Note4
Rg = 10
V
DD
= 480 V
V
GS
= 10 V
Note4
I
D
= 30 A
I
F
= 30 A, V
GS
= 0
Note4
I
F
= 30 A
V
GS
= 0
Note4
di
F
/dt = 100 A/s
R07DS0643EJ0100Rev.1.00
Apr 23, 2012
Page 2 of 6
RJK60S7DPP-E0
Preliminary
Main Characteristics
Channel Dissipation vs.
Case Temperature
50
60
50
40
30
20
10
0
0
25
50
75
100 125 150 175
0
6V
10 V
15 V
Typical Output Characteristics
Ta = 25
°
C
Pulse Test
8V
7V
Channel Dissipation Pch (W)
30
Drain Current I
D
(A)
40
6.5 V
20
10
V
GS
= 5.5 V
0
2
4
5
8
10
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
40
Ta = 125
°
C
Pulse Test
10 V
15 V
6V
20
100
8V
7V
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
6.5 V
30
10
1
Tc = 75°C
25°C
5.5 V
10
0.1
−25°C
V
GS
= 5 V
0
0
0.01
2
4
5
8
10
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Drain to Source on State Resistance
R
DS(on)
(Ω)
1
Ta = 125°C
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
0.4
V
GS
= 10 V
Pulse Test
0.3
I
D
= 30 A
0.2
10 A
25°C
0.1
0.1
15 A
V
GS
= 10 V
Pulse Test
0.01
1
10
100
0
−25
0
25
50
75
100 125 150
Drain Current I
D
(A)
Case Temperature Tc (°C)
R07DS0643EJ0100Rev.1.00
Apr 23, 2012
Page 3 of 6
RJK60S7DPP-E0
Body-Drain Diode Reverse
Recovery Time (Typical)
Reverse Recovery Time trr (ns)
1000
100000
10000
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 100 kHz
Ta = 25°C
Ciss
Capacitance C (pF)
1000
100
10
1
0.1
Crss
Coss
100
di/dt = 100 A/μs
V
GS
= 0, Ta = 25°C
10
1
10
100
0
50
100
150
200
250
300
Reverse Drain Current I
DR
(A)
Drain to Source Voltage
V
DS
(V)
C
OSS
Stored Energy (Typical)
V
DS
(V)
6
5
4
3
2
1
0
0
50
100
150
200
250
300
Dynamic Input Characteristics (Typical)
V
GS
12
V
DS
400
V
DD
= 480 V
300 V
100 V
600
Drain to Source Voltage
8
200
V
DD
= 480 V
300 V
100 V
20
40
60
80
4
0
0
0
Drain to Source Voltage
V
DS
(V)
Gate Charge
Qg (nC)
Gate to Source Cutoff Voltage V
GS(off)
(V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
100
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
6
5
I
D
= 10 mA
4
3
2
1
V
DS
= 10 V
0
−25
0
25
1 mA
0.1 mA
Reverse Drain Current I
DR
(A)
Ta = 125°C
10
25°C
1
V
GS
= 0
Pulse Test
0.1
0
0.4
0.8
1.2
1.6
50
75
100 125 150
Source to Drain Voltage V
SD
(V)
Case Temperature
Tc (°C)
R07DS0643EJ0100Rev.1.00
Apr 23, 2012
Page 4 of 6
Gate to Source Voltage
E
OSS
(μJ)
V
GS
(V)
800
I
D
= 30 A
Ta = 25°C
16
RJK60S7DPP-E0
Drain to Source Breakdown Voltage
vs. Case Temperature (Typical)
Preliminary
Maximum Avalanche Energy vs.
Channel Temperature Derating
Drain to Source Breakdown Voltage
V
(BR)DSS
(V)
800
Repetitive Avalanche Energy E
AR
(mJ)
4
V
DD
= 50 V
Rg
≥
100
Ω
3
700
600
2
500
I
D
= 10 mA
V
GS
= 0
400
−25
0
25
50
75
100 125 150
1
0
25
50
75
100
125
150
Case Temperature
Tc (°C)
Channel Temperature
Tch (°C)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 300 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
Avalanche Test Circuit
Avalanche Waveform
1
2
L
•
I
AP
2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
I
AP
Rg
100
Ω
Vin
V
DD
D. U. T
V
DD
V
DS
I
D
0
R07DS0643EJ0100Rev.1.00
Apr 23, 2012
Page 5 of 6
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