Preliminary
Datasheet
RJK60S5DPP-E0
600V - 20A - SJ MOS FET
High Speed Power Switching
Features
•
Superjunction MOSFET
•
Low on-resistance
R
DS(on)
= 0.150
Ω
typ. (at I
D
= 10 A, V
GS
= 10 V, Ta = 25°C)
•
High speed switching
t
f
= 23 ns typ. (at I
D
= 10 A, V
GS
= 10 V, R
L
= 30
Ω,
Rg = 10
Ω,
Ta = 25°C)
R07DS0641EJ0100
Rev.1.00
Apr 23, 2012
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
D
G
1. Gate
2. Drain
3. Source
1
2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Tc = 25°C
Tc = 100°C
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Limited by Tch max.
2. Value at Tc = 25°C
3. STch = 25°C, Tch
≤
150°C
Symbol
V
DSS
V
GSS
I
D)Note1
I
D)Note1
I
D (pulse)Note1
I
DR Note1
I
DR (pulse) Note1
I
AP
Note3
E
AR
Pch
Note2
θch-c
Tch
Tstg
Note3
Ratings
600
+30,
−20
20
12.6
40
20
40
5
1.36
33.7
3.7
150
–55 to +150
Unit
V
V
A
A
A
A
A
A
mJ
W
°C/W
°C
°C
R07DS0641EJ0100 Rev.1.00
Apr 23, 2012
Page 1 of 6
RJK60S5DPP-E0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Gate resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Body-drain diode reverse recovery
current
Body-drain diode reverse recovery
charge
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
R
DS(on
Rg
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
I
rr
Q
rr
Min
600
—
—
3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.150
0.375
2.5
1600
2160
8.2
23
25
49
23
27
10.5
8.5
0.96
400
25
5.6
Max
—
1
±0.1
5
0.178
—
—
—
—
—
—
—
—
—
—
—
—
1.60
—
—
—
Unit
V
mA
μA
V
Ω
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
A
μC
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 600 V, V
GS
= 0
V
GS
= +30V,
−20
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 10 A, V
GS
= 10 V
Note4
Ta = 150°C
Note4
I
D
= 10 A, V
GS
= 10 V
f = 1 MHz
V
DS
= 25 V, V
GS
= 0
V
DS
= 25 V
V
GS
= 0
f = 100kHz
I
D
= 10 A
V
GS
= 10 V
R
L
= 30
Ω
Note4
Rg = 10
Ω
V
DD
= 480 V
V
GS
= 10 V
Note4
I
D
= 20 A
I
F
= 20 A, V
GS
= 0
Note4
I
F
= 20 A
V
GS
= 0
Note4
di
F
/dt = 100 A/μs
R07DS0641EJ0100 Rev.1.00
Apr 23, 2012
Page 2 of 6
RJK60S5DPP-E0
Preliminary
Main Characteristics
Channel Dissipation vs.
Case Temperature
50
40
Ta = 25°C
Pulse Test
Typical Output Characteristics
8V
10 V
15 V
Channel Dissipation Pch (W)
7V
I
D
(A)
40
30
30
6.5 V
20
20
Drain Current
6V
10
10
V
GS
= 5.5 V
0
0
0
25
50
75
100 125 150 175
0
2
4
6
8
10
Case Temperature Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
30
25
20
Ta = 125°C
Pulse Test
Typical Transfer Characteristics
100
V
DS
= 10 V
Pulse Test
8V
10 V
15 V
7 V 6.5 V
I
D
(A)
Drain Current I
D
(A)
10
Drain Current
6V
15
10
5
0
1
Ta = 75°C
25°C
5.5 V
V
GS
= 5 V
0.1
−25°C
0.01
0
2
4
6
8
10
0
2
4
6
8
10
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage V
GS
(V)
Drain to Source on State Resistance
R
DS(on)
(Ω)
1
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
0.5
V
GS
= 10 V
Pulse Test
0.4
Ta = 125°C
25°C
0.1
0.3
I
D
= 20 A
0.2
5A
0.1
10 A
V
GS
= 10 V
Pulse Test
0.01
1
10
100
0
−25
0
25
50
75
100 125 150
Drain Current
I
D
(A)
Case Temperature
Tc (°C)
R07DS0641EJ0100 Rev.1.00
Apr 23, 2012
Page 3 of 6
RJK60S5DPP-E0
Body-Drain Diode Reverse
Recovery Time (Typical)
Reverse Recovery Time trr (ns)
1000
100000
10000
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 100 kHz
Ta = 25°C
Ciss
1000
100
10
Crss
1
0.1
Coss
100
di/dt = 100 A/μs
V
GS
= 0, Ta = 25°C
10
1
10
100
Capacitance C (pF)
0
50
100
150
200
250
300
Reverse Drain Current I
DR
(A)
Drain to Source Voltage
V
DS
(V)
C
OSS
Stored Energy (Typical)
V
DS
(V)
4
Dynamic Input Characteristics (Typical)
V
GS
600
V
DS
400
V
DD
= 480 V
300 V
100 V
12
3
Drain to Source Voltage
2
8
1
200
V
DD
= 480 V
300 V
100 V
20
40
4
I
D
= 20 A
Ta = 25°C
60
80
0
0
50
100
150
200
250
300
0
0
0
Drain to Source Voltage
V
DS
(V)
Gate Charge
Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
100
6
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
I
DR
(A)
Gate to Source Cutoff Voltage
V
GS(off)
(V)
5
I
D
= 10 mA
4
3
2
1
V
DS
= 10 V
0
−25
0
25
1 mA
0.1 mA
Ta = 125°C
10
25°C
Reverse Drain Current
1
V
GS
= 0
Pulse Test
0.1
0
0.4
0.8
1.2
1.6
50
75
100 125 150
Source to Drain Voltage
V
SD
(V)
Case Temperature
Tc (°C)
R07DS0641EJ0100 Rev.1.00
Apr 23, 2012
Page 4 of 6
Gate to Source Voltage
E
OSS
(μJ)
V
GS
(V)
800
16
RJK60S5DPP-E0
Drain to Source Breakdown Voltage
vs. Case Temperature (Typical)
Preliminary
Maximum Avalanche Energy vs.
Channel Temperature Derating
Drain to Source Breakdown Voltage
V
(BR)DSS
(V)
800
Repetitive Avalanche Energy E
AR
(mJ)
1.6
V
DD
= 50 V
Rg
≥
100
Ω
1.2
700
600
0.8
500
I
D
= 10 mA
V
GS
= 0
400
−25
0
25
50
75
100 125 150
0.4
0
25
50
75
100
125
150
Case Temperature
Tc (°C)
Channel Temperature
Tch (°C)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 300 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
Avalanche Test Circuit
Avalanche Waveform
1
2
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
V
DD
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
Rg
100
Ω
Vin
D. U. T
I
D
0
V
DD
R07DS0641EJ0100 Rev.1.00
Apr 23, 2012
Page 5 of 6
测试/测量
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