TRANSISTOR,BJT,PNP,120V V(BR)CEO,TO-236
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | National Semiconductor(TI ) |
包装说明 | , |
Reach Compliance Code | unknown |
配置 | Single |
最小直流电流增益 (hFE) | 40 |
JESD-609代码 | e0 |
极性/信道类型 | PNP |
最大功率耗散 (Abs) | 0.35 W |
表面贴装 | YES |
端子面层 | Tin/Lead (Sn/Pb) |
标称过渡频率 (fT) | 100 MHz |
MMBT5400 | MMBT4916 | MMBT201 | MMBT4354 | MMBT3702 | MMBT4355 | MMBT4356 | |
---|---|---|---|---|---|---|---|
描述 | TRANSISTOR,BJT,PNP,120V V(BR)CEO,TO-236 | TRANSISTOR,BJT,PNP,30V V(BR)CEO,TO-236 | TRANSISTOR 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, BIP General Purpose Small Signal | TRANSISTOR,BJT,PNP,60V V(BR)CEO,TO-236 | TRANSISTOR,BJT,PNP,25V V(BR)CEO,SOT-23 | TRANSISTOR,BJT,PNP,60V V(BR)CEO,SOT-23 | TRANSISTOR,BJT,PNP,60V V(BR)CEO,TO-236 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
Reach Compliance Code | unknown | compliant | unknown | unknown | unknown | unknown | unknown |
配置 | Single | Single | SINGLE | Single | Single | Single | Single |
最小直流电流增益 (hFE) | 40 | 15 | 50 | 25 | 60 | 75 | 30 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
极性/信道类型 | PNP | PNP | PNP | PNP | PNP | PNP | PNP |
最大功率耗散 (Abs) | 0.35 W | 0.35 W | 0.35 W | 0.35 W | 0.35 W | 0.35 W | 0.35 W |
表面贴装 | YES | YES | YES | YES | YES | YES | YES |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
标称过渡频率 (fT) | 100 MHz | 400 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz |
厂商名称 | National Semiconductor(TI ) | National Semiconductor(TI ) | - | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) |
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