BAV302-13,BAV302-13 pdf中文资料,BAV302-13引脚图,BAV302-13电路-Datasheet-电子工程世界

BAV302-13: 产品描述Rectifier Diode, 1 Element, 0.125A, 200V V(RRM), Silicon, GLASS, MICROMELF-2; 产品类别分立半导体二极管; 文件大小57KB，共2页; 制造商Diodes Incorporated

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BAV302-13概述

Rectifier Diode, 1 Element, 0.125A, 200V V(RRM), Silicon, GLASS, MICROMELF-2

	BAV302-13	BAV302-7	BAV301-7	BAV303-7
描述	Rectifier Diode, 1 Element, 0.125A, 200V V(RRM), Silicon, GLASS, MICROMELF-2	Rectifier Diode, 1 Element, 0.125A, 200V V(RRM), Silicon, GLASS, MICROMELF-2	Rectifier Diode, 1 Element, 0.125A, 120V V(RRM), Silicon, GLASS, MICROMELF-2	Rectifier Diode, 1 Element, 0.125A, 250V V(RRM), Silicon, GLASS, MICROMELF-2
零件包装代码	MELF	MELF	MELF	MELF
包装说明	O-LELF-R2	O-LELF-R2	GLASS, MICROMELF-2	O-LELF-R2
针数	2	2	2	2
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 代码	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2
元件数量	1	1	1	1
端子数量	2	2	2	2
最高工作温度	175 °C	175 °C	175 °C	175 °C
最低工作温度	-65 °C	-65 °C	-65 °C	-65 °C
最大输出电流	0.125 A	0.125 A	0.125 A	0.125 A
封装主体材料	GLASS	GLASS	GLASS	GLASS
封装形状	ROUND	ROUND	ROUND	ROUND
封装形式	LONG FORM	LONG FORM	LONG FORM	LONG FORM
最大功率耗散	0.5 W	0.5 W	0.5 W	0.5 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大重复峰值反向电压	200 V	200 V	120 V	250 V
最大反向恢复时间	0.05 µs	0.05 µs	0.05 µs	0.05 µs
表面贴装	YES	YES	YES	YES
端子形式	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND
端子位置	END	END	END	END
厂商名称	Diodes Incorporated	-	Diodes Incorporated	Diodes Incorporated