Data Sheet
HIGH SENSITIVITY CMOS HALL-EFFECT LATCH
General Description
The AH920 is a Hall-effect latch designed in mixed
signal CMOS technology. It is quite suitable for use
in automotive, industrial and consumer applications.
Superior high-temperature performance is made
possible through dynamic offset cancellation, which
reduces the residual offset voltage normally caused
by device over-molding, temperature dependencies,
and thermal stress. The device integrates a voltage
regulator, Hall-voltage generator, small-signal
amplifier, chopper stabilization, schmitt trigger, and
open-drain output.
An on-board regulator permits operation with supply
voltage from 3.5V to 20V.
The AH920 is available in TO-92S-3 and SOT-23-3
packages, which are optimized for most applications.
AH920
Features
•
•
•
•
•
•
•
Wide Operating Voltage Range from 3.5 to 20V
Symmetrical Switch Points
Chopper-stabilized Amplifier Stage
Superior Temperature Stability
Open-drain Output
Compact Size
ESD Rating: 6000V (Human Body Model)
Applications
•
•
•
•
•
•
Brushless DC Motor Commutation
Brushless DC Fan
Solid-state Switch
Revolution Counting
Speed Detection
High Sensitivity and Unconnected Switch
TO-92S-3
SOT-23-3
Figure 1. Package Types of AH920
Nov. 2010
Rev. 1.3
1
BCD Semiconductor Manufacturing Limited
Data Sheet
HIGH SENSITIVITY CMOS HALL-EFFECT LATCH
Functional Block Diagram
AH920
Figure 3. Functional Block Diagram of AH920
Ordering Information
AH920W5
23
-
Circuit Type
Package
Z3: TO-92S-3
5
N: SOT-23-3
Package
TO-92S-3
SOT-23-3
G1: Green
TR: Tape & Reel
Blank: Bulk
Temperature
Range
-40 to 125°C
-40 to 125°C
Part Number
AH920Z3-G1
AH920NTR-G1
Marking ID
920
GS7
Packing Type
Bulk
Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS
compliant and green.
Nov. 2010
Rev. 1.3
3
BCD Semiconductor Manufacturing Limited
Data Sheet
HIGH SENSITIVITY CMOS HALL-EFFECT LATCH
Absolute Maximum Ratings (Note 1)
Parameter
Supply Voltage
Supply Current (Fault)
Output current (Continuous)
Power Dissipation
Operation Temperature
Storage Temperature
Maximum Junction Temperature
ESD (Human Body Model)
AH920
Symbol
V
CC
I
CC
I
OUT
P
D
T
A
T
STG
T
J
(Max)
ESD
TO-92S-3
SOT-23-3
Value
20
5
25
400
230
Unit
V
mA
mA
mW
ºC
ºC
ºC
V
-50 to 150
-65 to 150
165
6000
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Supply Voltage
Operating Ambient Temperature
Symbol
V
CC
T
A
Min
3.5
-40
Max
20
125
Unit
V
ºC
Nov. 2010
Rev. 1.3
4
BCD Semiconductor Manufacturing Limited
Data Sheet
HIGH SENSITIVITY CMOS HALL-EFFECT LATCH
Electrical Characteristics
V
CC
=12V, T
A
=25°C, unless otherwise specified.
AH920
Parameter
Supply Voltage
Supply Current
Saturation Voltage
Output Leakage Current
Output Rising Time
Output Falling Time
Symbol
V
CC
I
CC
V
SAT
I
LEAKAGE
t
RISING
t
FALLING
Conditions
Operating
V
CC
=12V, B<B
RP
V
CC
=12V, B>B
OP
I
OUT
=20mA, B>B
OP
V
OUT
=20V, B<B
RP
R
L
=1kΩ,C
L
=20pF
R
L
=1kΩ,C
L
=20pF
Min
3.5
Typ
12
3.0
3.0
185
0.1
0.4
0.4
Max
20
5.0
5.0
500
10
2
2
Unit
V
mA
mA
mV
µA
µs
µs
Magnetic Characteristics
V
CC
=12V, T
A
=25°C, unless otherwise specified.
Parameter
Operating Point
Releasing Point
Hysteresis
Symbol
B
OP
B
RP
B
HYS
Min
5
-40
Typ
22
-22
45
Max
40
-5
Unit
Gauss
Gauss
Gauss
Figure 4. Magnetic Flux Density of AH920
Nov. 2010
Rev. 1.3
5
BCD Semiconductor Manufacturing Limited
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