UNISONIC TECHNOLOGIES CO., LTD
8N70
8A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
8N70
is an N-channel power MOSFET using UTC’s
advanced technology to provide the customers with minimum
on-state resistance, superior switching performance and withstand
high energy pulse in the avalanche and commutation mode.
Power MOSFET
FEATURES
* R
DS(ON)
= 1.4Ω @ V
GS
=10V, I
D
=4A
* High switching speed
* Low Gate Charge(typical 32nC)
* Low C
RSS
(typical 13.7pF)
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
8N70L-TA3-T
8N70G-TA3-T
8N70L-TF3-T
8N70G-TF3-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-220
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-711.D
8N70
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V
DSS
V
GSS
Power MOSFET
RATINGS
UNIT
700
V
±30
V
8
A
T
C
=25°C
I
D
Continuous
Drain Current
T
C
=100°C
4.8
A
Pulsed (Note 4)
I
DM
32
A
8
A
Repetitive (Note 2)
I
AR
Avalanche Current
Repetitive (Note 3)
I
AS
8
A
Single Pulsed (Note 3)
E
AS
266
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
11.6
mJ
TO-220
147
Power Dissipation (T
C
=25°C)
P
D
W
TO-220F
40
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 7.74mH, I
AS
= 8A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
4. Limited by maximum junction temperature
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
TO-220F
Note: 3urface mounted on FR4 board t≤10sec
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
0.85
3.1
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
V
DS
=700V, V
GS
=0V
V
GS
=+30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=4A
V
GS
=0V, V
DS
=25V, f=1.0MHz
MIN TYP MAX UNIT
700
1
+10
-10
2.0
1.2
2006
148
13.7
4.0
1.4
V
µA
nA
nA
V
Ω
pF
pF
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-711.D
8N70
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=560V, I
D
=8A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=300V, I
D
=10A, R
G
=25Ω,
V
GS
=10V (Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Integral reverse diode in the
MOSFET
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=8A, V
GS
=0V
Body Diode Reverse Recovery Time
t
rr
I
S
=8A, V
GS
=0V, dI
F
/dt=100A/µs
Body Diode Reverse Recovery Charge
Q
RR
Notes: 1. Essentially independent of operating temperature
2. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
Power MOSFET
MIN TYP MAX UNIT
32
9
8
23
69
144
77
8
32
1.4
420
4.2
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-711.D
8N70
TEST CIRCUITS AND WAVEFORMS
V
DS
Power MOSFET
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-711.D
8N70
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
V
DS
-
+
-
L
D.U.T.
Power MOSFET
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-711.D
PCB设计
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
