UNISONIC TECHNOLOGIES CO., LTD
8N50
8A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
1
TO-220
The UTC
8N50
is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC
8N50
is generally applied in high efficiency switch
mode power supplies, active power factor correction and electronic
lamp ballasts based on half bridge topology.
1
TO-220F1
FEATURES
* R
DS(ON)
< 0.85Ω @ V
GS
=10V, I
D
=4.5A
* High Switching Speed
* 100% Avalanche Tested
1
TO-220F2
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
8N50L-TA3-T
8N50G-TA3-T
8N50L-TF1-T
8N50G-TF1-T
8N50L-TF2-T
8N50G-TF2-T
Pin Assignment: G: Gate
D: Drain
S: Source
Package
TO-220
TO-220F1
TO-220F2
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Note:
MARKING
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Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-546.D
8N50
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
500
V
Gate-Source Voltage
V
GSS
±30
V
Continuous (T
C
=25°C)
I
D
8(Note 2)
A
Drain Current
Pulsed (Note 3)
I
DM
32(Note 2)
A
Avalanche Current (Note 3)
I
AR
8
A
320
mJ
Single Pulsed (Note 4)
E
AS
Avalanche Energy
Repetitive (Note 5)
E
AR
12.5
mJ
125
TO-220
W
Power Dissipation
TO-220F1
42
TO-220F2
62.5
P
D
TO-220
1
Derate above 25°C
TO-220F1
0.33
W/°C
TO-220F2
0.5
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L = 10mH, I
AS
= 8A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
5. I
SD
≤
8A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
1
3
2
UNIT
°C/W
°C/W
PARAMETER
Junction to Ambient
TO-220
Junction to Case
TO-220F1
TO-220F2
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QW-R502-546.D
8N50
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=500V, V
GS
=0V
Forward
V
GS
=+30V, V
DS
=0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=4.5A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=400V, I
D
=8A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=250V, I
D
=8A, R
G
=25Ω
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=8A, V
GS
=0V
I
S
=8A, V
GS
=0V, dI
F
/dt=50A/µs
Body Diode Reverse Recovery Time
t
rr
(Note 1)
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
500
V
25
µA
+100 nA
-100 nA
4.0
0.62 0.85
650
112
21
35
7
11
50
80
260
35
8
32
1.4
800
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
2.0
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QW-R502-546.D
8N50
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Same Type
as DUT
12V
200nF
50kΩ
V
GS
DUT
3mA
300nF
V
DS
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
V
DS
R
G
I
D
BV
DSS
L
I
AS
E
AS
= 1 LI
AS2
2
BV
DSS
BV
DSS
-V
DD
10V
t
P
DUT
V
DD
V
DD
I
D
(t)
V
DS
(t)
Time
t
P
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R502-546.D
8N50
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
V
DS
L
-
I
SD
V
GS
Power MOSFET
DUT
R
G
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
V
GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
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QW-R502-546.D
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