UNISONIC TECHNOLOGIES CO., LTD
10N60
10A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The
UTC 10N60
is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
FEATURES
* R
DS(ON)
< 0.75Ω@V
GS
=10V
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
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QW-R502-119.O
10N60
ORDERING INFORMATION
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-262
TO-263
TO-263
1
G
G
G
G
G
G
G
G
Ordering Number
Lead Free
Halogen Free
10N60L-TA3-T
10N60G-TA3-T
10N60L-TF3-T
10N60G-TF3-T
10N60L-TF1-T
10N60G-TF1-T
10N60L-TF2-T
10N60G-TF2-T
10N60L-TF3T-T
10N60G-TF3T-T
10N60L- T2Q-T
10N60G- T2Q-T
10N60L-TQ2-T
10N60G-TQ2-T
10N60L-TQ2-R
10N60G-TQ2-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Power MOSFET
Pin Assignment
2
D
D
D
D
D
D
D
D
3
S
S
S
S
S
S
S
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
MARKING INFORMATION
PACKAGE
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-262
TO-263
MARKING
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QW-R502-119.O
10N60
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
± 30
V
Avalanche Current (Note 2)
I
AR
10
A
10
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
38
A
700
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
15.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-262/TO-263
156
TO-220F/TO-220F1
50
Power Dissipation
P
D
W
TO-220F3
TO-220F2
52
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=14.2mH, I
AS
=10A, V
DD
= 50V, R
G
=25Ω, Starting T
J
=25°C
4. I
SD
≤9.5A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
=25°C
THERMAL DATA
SYMBOL
θ
JA
RATING
62.5
0.8
2.5
2.4
0.7
UNIT
°C/W
PARAMETER
Junction to Ambient
TO-220
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-262/TO-263
θ
JC
°C/W
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QW-R502-119.O
10N60
ELECTRICAL CHARACTERISTICS
( T
C
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Power MOSFET
MIN TYP MAX UNIT
600
V
1
µA
100 µA
100 nA
-100 nA
V/°C
V
Ω
V
GS
=0V, I
D
=250μA
V
DS
=600V, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=480V, T
C
=125°С
Forward
V
GS
=30 V, V
DS
=0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-30 V, V
DS
=0V
Breakdown Voltage Temperature Coefficient
∆BV
DSS
/∆T
J
I
D
=250µA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=5A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
DS
=25V, V
GS
=0V, f=1.0 MHz
Reverse Transfer Capacitance
C
RSS
Gate Resistance
R
G
V
DS
=0V, V
GS
=0V, f=1MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
=300V, I
D
=10A,
R
G
=25Ω (Note1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=480V, I
D
=10A,
Gate-Source Charge
Q
GS
V
GS
=10 V (Note1, 2)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0 V, I
S
=10A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
V
GS
=0 V, I
S
=10A,
dI
F
/dt=100A/µs (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
0.7
2.0
4.0
0.68 0.75
1570 2040 pF
166 215 pF
18
24
pF
0.25
1.4
Ω
23
55
69 150
144 300
77 165
44
57
6.7
18.5
1.4
10
38
420
4.2
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
µC
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QW-R502-119.O
10N60
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-119.O
嵌入式系统
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