UNISONIC TECHNOLOGIES CO., LTD
MMDT3946
Preliminary
DUAL TRANSISTOR
COMPLEMENTARY NPN/PNP
SMALL SIGNAL SURFACE
MOUNT TRANSISTOR
DESCRIPTION
The UTC
MMDT3946
is a complementary NPN/PNP small signal
surface mount transistor. It’s suitable for low power amplification and
switch.
FEATURES
* Epitaxial Planar Die Construction
* Extremely-Small Surface Mount Package
ORDERING INFORMATION
Ordering Number
Lead Free
MMDT3946L-AL6-R
MMDT3946L-AL6-R
Halogen Free
MMDT3946G-AL6-R
Package
SOT-363
Packing
Tape Reel
(1)Packing Type
(2)Package Type
(3)Lead Free
(1) R: Tape Reel
(2) AL6: SOT-363
(3) G: Halogen Free, L: Lead Free
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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QW-R218-015.a
MMDT3946
MARKING
Preliminary
DUAL TRANSISTOR
PIN CONFIGURATION
C
2
6
B
1
5
E
1
4
1
2
3
E
2
B
2
C
1
E1,B1,C1=PNP3906 Section
E2,B2,C2=NPN3904 Section
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R218-015.a
MMDT3946
TR1(PNP)
Preliminary
DUAL TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
-40
V
Collector-Emitter Voltage
V
CEO
-40
V
Emitter-Base Voltage
V
EBO
-5.0
V
Collector Current-Continuous
I
C
-200
mA
Power Dissipation
P
D
200
mW
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
TR2(NPN)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
RATINGS
60
40
6.0
200
200
+150
-55~+150
UNIT
V
V
V
mA
mW
°C
°C
THERMAL DATA
(T
A
=25°C, unless otherwise specified.)
PARAMETER
Junction to Ambient
SYMBOL
θ
JA
RATINGS
625
UNIT
°C/W
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QW-R218-015.a
MMDT3946
TR1(PNP)
PARAMETER
OFF CHARACTERISTICS
(Note 1)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS
(Note 1)
Preliminary
DUAL TRANSISTOR
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified.)
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
TEST CONDITIONS
I
C
=-10μA, I
E
=0
I
C
=-1.0mA, I
B
=0
I
E
=-10μA, I
C
=0
V
CE
=-30V, V
EB(OFF)
=-3.0V
V
CE
=-30V, V
EB(OFF)
=-3.0V
I
C
=-100µA, V
CE
=-1.0V
I
C
=-1.0mA, V
CE
=-1.0V
I
C
=-10mA, V
CE
=-1.0V
I
C
=-50mA, V
CE
=-1.0V
I
C
=-100mA, V
CE
=-1.0V
I
C
=-10mA, I
B
=-1.0mA
I
C
=-50mA, I
B
=-5.0mA
I
C
=-10mA, I
B
=-1.0mA
I
C
=-50mA, I
B
=-5.0mA
V
CB
=-5.0V, f=1.0MHz, I
E
=0
V
EB
=-0.5V, f=1.0MHz, I
C
=0
V
CE
=10V, I
C
=1.0mA, f=1.0kHz
V
CE
=-20V, I
C
=-10mA, f=100MHz
V
CE
=-5.0V, I
C
=-100μA, R
S
=1.0kΩ,
f=1.0kHz
2.0
0.1
100
3.0
250
MIN
-40
-40
-5.0
-50
-50
60
80
100
60
30
TYP MAX UNIT
V
V
V
nA
nA
DC Current Gain
h
EF
300
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
V
CE(SAT)
V
BE(SAT)
C
OBO
C
IBO
h
IE
h
RE
h
FE
h
OE
f
T
NF
-0.65
-0.25
-0.40
-0.85
-0.95
V
V
4.5
pF
10
pF
12
kΩ
10 ×10
-4
400
60
μS
MHz
4.0
35
35
225
75
dB
ns
ns
ns
ns
SWITCHING CHARACTERISTICS
Delay Time
t
D
V
CC
=-3.0V, I
C
=-10mA,
V
BE(OFF)
=0.5V, I
B1
=-1.0mA
Rise Time
t
R
V
CC
=-3.0V, I
C
=-10mA,
Storage Time
t
S
I
B1
=I
B2
=-1.0mA
Fall Time
t
F
Note: 1. Short duration pulse test used to minimize self-heating effect.
UNISONIC TECHNOLOGIES CO., LTD
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4 of 5
QW-R218-015.a
MMDT3946
TR2(NPN)
PARAMETER
OFF CHARACTERISTICS
(Note 1)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS
(Note 1)
Preliminary
DUAL TRANSISTOR
ELECTRICAL CHARACTERISTICS(Cont.)
(T
A
=25°C,unless otherwise specified.)
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
TEST CONDITIONS
I
C
=10μA, I
E
=0
I
C
=1.0mA, I
B
=0
I
E
=10μA, I
C
=0
V
CE
=30V, V
EB(OFF)
=3.0V
V
CE
=30V, V
EB(OFF)
=3.0V
I
C
=100µA, V
CE
=1.0V
I
C
=1.0mA, V
CE
=1.0V
I
C
=10mA, V
CE
=1.0V
I
C
=50mA, V
CE
=1.0V
I
C
=100mA, V
CE
=1.0V
I
C
=10mA, I
B
=1.0mA
I
C
=50mA, I
B
=5.0mA
I
C
=10mA, I
B
=1.0mA
I
C
=50mA, I
B
=5.0mA
V
CB
=5.0V, f=1.0MHz, I
E
=0
V
EB
=0.5V, f=1.0MHz, I
C
=0
V
CE
=10V, I
C
=1.0mA, f=1.0kHz
V
CE
=20V, I
C
=20mA, f=100MHz
V
CE
=5.0V, I
C
=100μA, R
S
=1.0kΩ,
f=1.0kHz
MIN
60
40
5.0
TYP MAX UNIT
V
V
V
nA
nA
6.0
50
50
DC Current Gain
h
FE
40
70
100
60
30
300
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
V
CE(SAT)
V
BE(SAT)
C
OBO
C
IBO
h
IE
h
RE
h
FE
h
OE
f
T
NF
0.65
0.20
0.30
0.85
0.95
V
V
1.0
0.5
100
1.0
300
4.0
pF
8.0
pF
10
kΩ
8.0 ×10
-4
400
40
μS
MHz
5.0
35
35
200
50
dB
ns
ns
ns
ns
SWITCHING CHARACTERISTICS
Delay Time
t
D
V
CC
=3.0V, I
C
=10mA,
V
BE(OFF)
=-0.5V, I
B1
=1.0mA
Rise Time
t
R
V
CC
=3.0V, I
C
=10mA,
Storage Time
t
S
I
B1
=I
B2
=1.0mA
Fall Time
t
F
Note: 1. Short duration pulse test used to minimize self-heating effect.
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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