UNISONIC TECHNOLOGIES CO., LTD
MMDT3904
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
DUAL NPN SMALL SIGNAL
SURFACE MOUNT TRANSISTOR
DESCRIPTION
The UTC
MMDT3904
is a dual NPN small signal surface mount
transistor.
FEATURES
* Suitable for Low Power Amplification and Switching
* Epitaxial Planar Die Construction
* Extremely-Small Surface Mount Package
ORDERING INFORMATION
Ordering Number
Lead Free
MMDT3904L-AL6-R
MMDT3904L-AL6-R
Halogen Free
MMDT3904G-AL6-R
Package
SOT-363
Packing
Tape Reel
(1)Packing Type
(2)Package Type
(3)Lead Free
(1) R: Tape Reel
(2) TL6: SOT-363
(3) Halogen Free, L: Lead Free
MARKING
PIN CONFIGURATION
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Copyright © 2011 Unisonic Technologies Co., Ltd
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QW-R218-013.a
MMDT3904
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C
unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
6.0
V
Collector Current - Continuous
I
C
200
mA
Power Dissipation
P
D
200
mW
Thermal Resistance, Junction to Ambient
θ
JA
625
℃/W
Junction Temperature
T
J
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C
unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS (Note 1)
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
= 10μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
= 10μA, I
C
= 0
Collector Cut-off Current
I
CEX
V
CE
= 30V, V
EB(OFF)
= 3.0V
Base Cut-off Current
I
BL
V
CE
= 30V, V
EB(OFF)
= 3.0V
ON CHARACTERISTICS (Note 1)
I
C
= 100μA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
DC Current Gain
h
FE
I
C
= 10mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
I
C
= 10mA, I
B
= 1.0mA
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 1.0mA
Base- Emitter Saturation Voltage
V
BE(sat)
I
C
= 50mA, I
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
OBO
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
IBO
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
IE
V
CE
= 10V, I
C
= 1.0mA,
Voltage Feedback Ratio
H
RE
f = 1.0kHz
Small Signal Current Gain
H
FE
Output Admittance
H
OE
V
CE
= 20V, I
C
= 10mA,
Current Gain-Bandwidth Product
f
T
f = 100MHz
V
CE
= 5.0V, I
C
= 100μA,
Noise Figure
NF
R
S
= 1.0kΩ, f = 1.0kHz
SWITCHING CHARACTERISTICS
V
CC
= 3.0V, I
C
= 10mA,
Delay Time
T
D
V
BE(off)
= - 0.5V, I
B1
= 1.0mA
Rise Time
T
R
Storage Time
T
S
Fall Time
T
F
Note: 1.
Short duration test pulse used to minimize self-heating.
V
CC
= 3.0V, I
C
= 10mA,
I
B1
= I
B2
= 1.0mA
MIN
60
40
5.0
50
50
40
70
100
60
30
TYP
MAX
UNIT
V
V
V
nA
nA
300
0.65
0.20
0.30
0.85
0.95
4.0
8.0
10
8.0
400
40
V
V
V
V
pF
pF
KΩ
-4
×10
μS
MHz
1.0
0.5
100
1.0
300
5.0
35
35
200
50
dB
ns
ns
ns
ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R218-013.a
MMDT3904
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R218-013.a
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