UNISONIC TECHNOLOGIES CO., LTD
MMBTA92
HIGH VOLTAGE PNP
TRANSISTOR
DESCRIPTION
The UTC
MMBTA92
are high voltage PNP transistors, designed
for telephone signal switching and for high voltage amplifier.
PNP SILICON TRANSISTOR
FEATURES
* High Collector-Emitter voltage: V
CEO
=-300V
* Collector Dissipation: P
C(MAX)
=350mW
Lead-free:
MMBTA92L
Halogen-free:MMBTA92G
ORDERING INFORMATION
Normal
MMBTA92-AE3-R
Ordering Number
Lead Free
Halogen Free
MMBTA92L-AE3-R MMBTA92G-AE3-R
Package
SOT-23
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
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QW-R206-005,D
MMBTA92
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Ta=25°C
Collector Dissipation T
C
=25°C
Derate Above Ta
>25°C
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Operating temperature range applies unless otherwise specified)
RATINGS
-300
-300
-5
-500
350
1.5
12
UNIT
V
V
V
mA
mW
W
mW/°C
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
TEST CONDITIONS
I
C
=-100μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100μA, I
C
=0
V
CB
=-200V, I
E
=0
V
EB
=-3V, I
C
=0
V
CE
=-10V, I
C
=-1mA
DC Current Gain (Note)
h
FE
V
CE
=-10V, I
C
=-10mA
V
CE
=-10V, I
C
=-30mA
Collector-Emitter Saturation Voltage
V
CE(SAT)1
I
C
=-20mA, I
B
=-2mA
Base-Emitter Saturation Voltage
V
BE(SAT)1
I
C
=-20mA, I
B
=-2mA
Current Gain Bandwidth Product
f
T
V
CE
=-20V, I
C
=-10mA, f=100MHz
Collector Base Capacitance
C
cb
V
CB
=-20V, I
E
=0, f=1MHz
Note: Pulse test: PW<300μs, Duty Cycle<2%, V
CE(SAT)1
<200mV
(Class SIN)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
MIN TYP MAX UNIT
-300
V
-300
V
-5
V
-0.25
μA
-0.10
μA
60
80
80
-0.5
V
-0.90 V
50
MHz
6
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-005,D
MMBTA92
TYPICAL CHARACTERISTICS
DC Current Gain
-10
V
CE
=-10V
DC Current Gain, h
FE
10
2
V
CE(SAT),
V
BE(SAT)
(mV)
-10
3
4
PNP SILICON TRANSISTOR
10
3
Saturation Voltage
I
C
=10*I
B
V
CE(SAT)
V
BE(SAT)
10
1
-10
2
10
0
-10
0
-10
1
-10
2
-10
3
-10
4
-10
1
-10
0
-10
1
-10
2
-10
3
-10
4
Collector Current, I
C
(mA)
Capacitance
10
Current Gain Bandwidth
Product (MHz)
Collector Current, I
C
(mA)
Current Gain Bandwidth Product
3
10
2
C
IB
(pF), C
CB
(pF)
C
IB
10
1
V
CE
=-20V
f=100MHz
C
CB
10
2
-10
-1
-10
0
-10
1
-10
2
Collector-Base Voltage(V)
10
1
-10
0
-10
1
-10
2
Collector Current, I
C
(mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-005,D
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