UNISONIC TECHNOLOGIES CO., LTD
MMBTA56
AMPLIFIER TRANSISTOR
FEATURES
3
* Collector-Emitter Voltage: V
CEO
=-80V
* Collector Dissipation: P
D
=350mW
1
2
SOT-23
PNP SILICON TRANSISTOR
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MMBTA56L-AE3-R
MMBTA56G-AE3-R
Package
SOT-23
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 5
QW-R206-090,B
MMBTA56
ABSOLUTE MAXIMUM RATINGS
(T
A
=25℃)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
PNP SILICON TRANSISTOR
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation(Note 1)
P
D
Derate Above 25℃
Junction Temperature
T
J
Storage Temperature
T
STG
Note 1. Device mounted on FR-4=1.6×1.6×0.06 in
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
RATINGS
-80
-80
-4
-500
350
2.8
+150
-55 ~ +150
UNIT
V
V
V
mA
mW
mW/℃
℃
℃
THERMAL DATA
PARAMETER
Thermal Resistance, Junction to Ambient
SYMBOL
θ
JA
MAX
357
UNIT
℃/W
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(Note 1)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS
DC Current Gain
SYMBOL
BV
CEO
BV
EBO
I
CES
I
CBO
h
FE
TEST CONDITIONS
I
C
=-1.0mA, I
B
=0
I
E
=-100μA, Ic=0
V
CE
=-60V, I
B
=0
V
CB
=-80V, I
E
=0
I
C
=-10mA, V
CE
=-1V
I
C
=-100mA, V
CE
=-1V
I
C
=-100mA, I
B
=-10mA
I
C
=-100mA, V
CE
=-1V
MIN
-80
-4
-0.1
-0.1
100
100
-0.25
-1.2
100
V
V
MHz
TYP
MAX
UNIT
V
V
μA
μA
Collector-Emitter Saturation Voltage
V
CE(SAT)
Base-Emitter on Voltage
V
BE(ON)
SMALL-SIGNAL CHARACTERISTICS
I
C
=-10mA, V
CE
=-2V,
Current Gain Bandwidth Product
f
T
(Note2)
f=100MHz
Note 1: Pulse test: PW≤300μs, Duty Cycle≤2%
2: f
T
is defined as the frequency at which IhfeI extrapolates to unity.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R206-090,B
MMBTA56
SWITCHING TIME TEST CIRCUITS
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
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TYPICAL CHARACTERISTICS
PNP SILICON TRANSISTOR
Current-Gain Bandwidth
Product, f
T
(MHz)
Capacitance, C (pF)
Switching Time
Active-Region Safe Operating Area
-1.0K
-700
-500
Collector Current, I
C
(mA)
-300
-200
1.0ms
T
C
=25℃
s
0µ
10
1.0K
700
500
Time, t (ns)
300
200
100
70
50
t
s
1.0s
t
f
V
CC
=-40V
30 I
C
/I
B
=10
t
r
20 I
B1
=I
B2
T
J
=25℃ t
d
@V
BE(off)
=-0.5V
10
-5.0-7.0 -10 -20 -30 -50-70-100-200-300-500
Collector Current, I
C
(mA)
-100 T
A
=25℃
-70
-50
MMBTA55
-30
-20
MMBTA56
Current Limit
Thermal Limit
Second Breakdown Limit
-10
-1.0 -2.0-3.0-5.0 -7.0-10 -20-30 -50 -70-100
Collector-Emitter Voltage, V
CE
(V)
DC Current Gain, h
FE
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Voltage, V
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MMBTA56
TYPICAL CHARACTERISTICS(Cont.)
Temperature Coefficient, R
θ
VB
(mV/℃)
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
Collector-Emitter Voltage, V
CE
(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-090,B
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