UNISONIC TECHNOLOGIES CO., LTD
MMBT9014
PRE-AMPLIFIER, LOW LEVEL
& LOW NOISE
FEATURES
* High Total Power Dissipation. (450mW)
* Excellent h
FE
Linearity.
* Complementary to UTC MMBT9015
NPN SILICON TRANSISTOR
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MMBT9014G-x-AE3-R
MMBT9014G-x-AE3-R
Package
SOT-23
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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QW-R206-022,E
MMBT9014
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
V
CEO
45
V
Collector-Base Voltage
V
CBO
50
V
Emitter Base Voltage
V
EBO
5
V
Collector Current
I
C
100
mA
Collector dissipation
P
C
225
mW
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Collector cutoff current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-emitter on voltage
Current-Gain-Bandwidth Product
Output Capacitance
Noise Figure
SYMBOL
V
CEO
V
CBO
V
EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
f
T
C
OB
NF
TEST CONDITIONS
I
C
=100μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100μA, I
C
=0
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V,Ic=1mA
I
C
=100mA, I
B
=5mA
I
C
=100mA, I
B
=5mA
V
CE
=5V, I
C
=2mA
V
CE
=5V, I
C
=10mA
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=5V,I
C
=0.2mA,f=1KHz,R
S
=2KΩ
MIN
50
45
5
TYP
MAX
UNIT
V
V
V
nA
nA
V
V
V
MHz
pF
dB
60
0.58
150
280
0.14
0.84
0.63
270
2.2
0.9
50
100
1000
0.3
1.0
0.7
3.5
10
CLASSIFICATION OF h
FE
RANK
RANGE
A
60-150
B
100-300
C
200-600
D
400-1000
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-022,E
MMBT9014
TYPICAL CHARACTERISTICS
Static Characteristic
100
90
Collector Current, I
C
(mA)
80
70
60
50
40
30
20
10
0
0
10
20
30
40
50
10
1
I
B
=160μA
I
B
=140μA
I
B
=120μA
I
B
=100μA
I
B
=80μA
I
B
=60μA
I
B
=40μA
I
B
=20μA
1000
500
Dc Current Gain, h
FE
NPN SILICON TRANSISTOR
Dc Current Gain
V
CE
=5V
100
50
10
100
1000
Collect-Emitter Voltage, V
CE
(V)
Base-Emitter Saturation Voltage Collecter
Saturation Voltage
1000
500
V
CE(SAT)
Collector Current, I
C
(mA)
Current Gain-Bandwidth Product
Current Gain-Bandwidth Product, f
T
(MHz)
1000
500
V
CE
=5V
Saturation Voltage, V
BE(SAT)
V
CE(SAT)
(mV)
100
50
V
BE(SAT)
100
50
I
C
=20I
B
10
1
10
100
1000
10
1
10
100
1000
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-022,E
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