UNISONIC TECHNOLOGIES CO., LTD
MMBT5551
HIGH VOLTAGE SWITCHING
TRANSISTOR
FEATURES
* High Collector-Emitter Voltage: V
CEO
=160V
* High current gain
NPN SILICON TRANSISTOR
Lead-free: MMBT5551L
Halogen-free: MMBT5551G
ORDERING INFORMATION
Normal
MMBT5551-x-AE3-R
Ordering Number
Lead Free Plating
Halogen-Free
MMBT5551L-x-AE3-R MMBT5551G-x-AE3-R
Package
SOT-23
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
MARKING
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QW-R206-010,F
Copyright © 2008 Unisonic Technologies Co., Ltd
MMBT5551
ABSOLUATE MAXIUM RATINGS
(Ta = 25℃)
PARAMETER
NPN SILICON TRANSISTOR
SYMBOL
RATINGS
UNIT
Collector -Base Voltage
V
CBO
180
V
Collector -Emitter Voltage
V
CEO
160
V
Emitter -Base Voltage
V
EBO
6
V
DC Collector Current
I
C
600
mA
Power Dissipation
P
D
350
mW
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta= 25℃, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain(note)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
SYMBOL
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
V
BE(SAT)
f
T
C
ob
NF
TEST CONDITIONS
I
C
=100μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=120V, I
E
=0
V
BE
=4V, I
C
=0
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=50mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CE
=10V, I
C
=10mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
I
C
=0.25mA, V
CE
=5V
R
S
=1kΩ, f=10Hz ~ 15.7kHz
MIN
180
160
6
TYP
MAX
UNIT
V
V
V
nA
nA
50
50
80
80
80
160
400
0.15
0.2
1
1
300
6.0
8
V
V
MHz
pF
dB
100
Note: Pulse test: PW<300μs, Duty Cycle<2%
CLASSIFICATION OF h
FE
RANK
RANGE
A
80-170
B
150-240
C
200-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-010,F
MMBT5551
Current Gain-Bandwidth Product, f
T
(MHz)
Collector Current, Ic (mA)
Capacitance, Cob (pF)
■
TYPICAL CHARACTERICS
UNISONIC TECHNOLOGIES CO., LTD
Saturation Voltage (V)
DC current Gain, h
FE
www.unisonic.com.tw
NPN SILICON TRANSISTOR
QW-R206-010,F
3 of 4
MMBT5551
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-010,F
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