UNISONIC TECHNOLOGIES CO., LTD
MMBT5401
HIGH VOLTAGE SWITCHING
TRANSISTOR
FEATURES
PNP SILICON TRANSISTOR
*Collector-Emitter Voltage: V
CEO
=-150V
*High Current Gain
ORDERING INFORMATION
Ordering Number
MMBT5401G-x-AE3-R
Pin Assignment: E: Emitter
B: Base
Package
SOT-23
C: Collector
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
Note:
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R206-011.I
MMBT5401
PNP SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector -Base Voltage
V
CBO
-160
V
Collector -Emitter Voltage
V
CEO
-150
V
Emitter -Base Voltage
V
EBO
-5
V
DC Collector Current
I
C
-600
mA
Power Dissipation
P
D
350
mW
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
TEST CONDITIONS
I
C
=-100A, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10A, I
C
=0
V
CB
=-120V, I
E
=0
V
BE
=-3V, I
C
=0
V
CE
=-5V, I
C
=-1mA
V
CE
=-5V, I
C
=-10mA
V
CE
=-5V, I
C
=-50mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
V
CE
=-10V, I
C
=-10mA, f=100MHz
V
CB
=-10V, I
E
=0, f=1MHz
I
C
=-0.25mA, V
CE
=-5V
R
S
=1k, f=10Hz ~ 15.7kHz
MIN
-160
-150
-5
TYP
MAX
UNIT
V
V
V
nA
nA
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain(Note)
-50
-50
80
80
80
160
400
-0.2
-0.5
-1
-1
300
6.0
8
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
V
CE(SAT)
V
BE(SAT)
f
T
C
OB
NF
V
V
MHz
pF
dB
100
Note: Pulse test: P
W
<300s, Duty Cycle<2%
CLASSIFICATION OF h
FE
RANK
RANGE
A
80-170
B
150-240
C
200-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-011.I
MMBT5401
■
TYPICAL CHARACTERICS
Fig.1 Collector Output Capacitance
20
3
10
PNP SILICON TRANSISTOR
Fig.2 DC Current Gain
Capacitance, Cob (pF)
V
CE
=-5V
DC Current Gain, h
FE
16
f=1MHz
I
E
=0
12
2
10
8
1
10
4
0
0
-10
1
-10
2
-10
0
10
-1
-10
0
-10
1
-10
2
-10
3
-10
Collector-Base Voltage, V
CB
(V)
Collector Current, Ic (mA)
Fig.3 Base-Emitter on Voltage
Saturation Voltage, V
BE(SAT)
V
CE(SAT)
(V)
3
-10
1
-10
Fig.4 Saturation Voltage
Ic=10*I
B
Collector Current, Ic (mA)
V
CE
=-5V
2
-10
0
-10
V
BE
(SAT)
1
-10
-1
-10
V
CE
(SAT)
-2
-10
0
-10
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1
-10
0
-10
1
-10
2
-10
3
-10
Base-Emitter Voltage, V
BE
(V)
Collector Current, Ic (mA)
Fig.5 Current Gain-Bandwidth
Product
Current Gain-Bandwidth Product,
f
T
(MHz)
3
10
V
CE
=-10V
2
10
1
10
0
10
-1
-10
0
-10
1
-10
2
-10
3
-10
Collector Current, Ic (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-011.I
MMBT5401
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-011.I
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