UNISONIC TECHNOLOGIES CO., LTD
MMBT4401
NPN GENERAL PURPOSE
AMPLIFIER
DESCRIPTION
The UTC
MMBT4401
is designed for use as a medium power
amplifier and switch requiring collector currents up to 500mA.
3
1
NPN SILICON TRANSISTOR
3
2
1
SOT-23
2
SOT-323
ORDERING INFORMATION
Normal
MMBT4401-AE3-R
MMBT4401-AL3-R
Ordering Number
Lead Free
MMBT4401L-AE3-R
MMBT4401L-AL3-R
Halogen Free
MMBT4401G-AE3-R
MMBT4401G-AL3-R
Package
SOT-23
SOT-323
Pin Assignment
1
2
3
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 6
QW-R206-035.F
MMBT4401
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(Ta=25°C, unless otherwise specified) (Note)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current-Continuous
I
C
600
mA
Total Device Dissipation
350
mW
P
D
Derate above 25℃
2.8
mW/°C
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note 1. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
(Ta=25°C, unless otherwise specified)
CHARACTERISTIC
Junction to Ambient
SYMBOL
θ
JA
RATING
357
UNIT
°C /W
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
I
C
=0.1mA, I
E
=0
60
Collector-Emitter Breakdown Voltage (note)
BV
CEO
I
C
=1mA, I
B
=0
40
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=0.1mA, I
C
=0
6
Collector Cut-off Current
I
CEX
V
CE
=35V, V
EB
=0.4V
Base Cut-off Current
I
BL
V
CE
=35V, V
EB
=0.4V
ON CHARACTERISTICS
(note)
h
FE1
V
CE
=1V, I
C
=0.1mA
20
h
FE2
V
CE
=1V, I
C
=1mA
40
h
FE3
V
CE
=1V, I
C
=10mA
80
DC Current Gain
h
FE4
V
CE
=1V, I
C
=150mA
100
V
CE
=2V, I
C
=500mA
40
h
FE5
V
CE(SAT1
) I
C
=150mA, I
B
=15mA
Collector-Emitter Saturation Voltage
V
CE(SAT2)
I
C
=500mA, I
B
=50mA
V
BE(SAT1)
I
C
=150mA, I
B
=15mA
Base-Emitter Saturation Voltage
0.75
V
BE(SAT2)
I
C
=500mA, I
B
=50mA
SMALL SIGNAL CHARACTERISTICS1
Current Gain Bandwidth Product
f
T
V
CE
=10V, I
C
=20mA, f=100MHz 250
Collector-Base Capacitance
C
cb
V
CB
=5V, I
E
=0, f=140kHz
Emitter-Base Capacitance
C
eb
V
BE
=0.5V, I
C
=0, f=140kHz
Input Impedance
hie
V
CE
=10V, I
C
=1mA, f=1kHz
1
Voltage Feedback Ratio
hre
V
CE
=10V, I
C
=1mA, f=1kHz
0.1
Small-Signal Current Gain
hfe
V
CE
=10V, I
C
=1mA, f=1kHz
40
Output Admittance
hoe
V
CE
=10V, I
C
=1mA, f=1kHz
1
SWITCHING CHARACTERISTICS
V
CC
=30V, V
EB
=2V
Delay Time
t
D
I
C
=150mA I
B1
=15mA
V
CC
=30V, V
EB
=2V
Rise Time
t
R
I
C
=150mA I
B1
=15mA
Storage Time
t
S
V
CC
=30V, I
C
=150mA
Fall Time
t
F
I
B1
= I
B2
=15mA
Note: Pulse test: PulseWidth≤300μs, Duty Cycle≤2%
TYP
MAX
UNIT
V
V
V
µA
µA
300
0.4
0.75
0.95
1.2
V
V
V
V
MHz
pF
pF
kΩ
×10
-4
µmhos
ns
ns
ns
ns
6.5
30
15
8
500
30
15
20
225
30
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www.unisonic.com.tw
2 of 6
QW-R206-035.F
MMBT4401
TYPICAL CHARACTERISTICS
Typical Pulsed Current Gain
vs Collector Current
V
CE
=5V
400
300
200
100
125 C
NPN SILICON TRANSISTOR
Typical Pulsed Current Gain, h
FE
500
Collector-Emitter Voltage, V
CESAT
(V)
Collector-Emitter Saturation Voltage
vs Collector Current
0.4
0.3
0.2
25 C
0.1
-40 C
1
10
100
Collector Current, I
C
(mA)
500
β=10
125 C
25 C
-40 C
0
0.1 0.3 1 3 10 30 100 300
Collector Current, I
C
(mA)
Base-Emitter OnVoltage, V
BEON
(V)
500
100
10
1
0.1
Collector-Cutoff Current
vs Ambient Temperature
V
CB
=40V
20
16
C
te
12
8
4
25
50
75
100 125 150
Ambient Temperature, T
A
(℃)
0.1
1
10
Reverse Bias Voltage (V)
100
C
ob
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
f=1MHz
Base-Emitter Voltage, V
BESAT
(V)
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4 of 6
QW-R206-035.F
MMBT4401
TYPICAL CHARACTERISTICS(Cont.)
Turn On and Turn Off Times
vs Collector Current
I
C
I
B1
=I
B2
= 10
V
CC
=25V
Time (ns)
240
160
80
t
on
0
10
100
1000
Collector Current, I
C
(mA)
0
10
t
off
Time (ns)
240
160
80
t
D
NPN SILICON TRANSISTOR
400
320
400
320
Switching Times
vs Collector Current
I
B1
=I
B2
=
V
CC
=25V
t
S
t
R
I
C
10
t
F
100
1000
Collector Current, I
C
(mA)
Char.Relative To Voltage at T
A
=25℃
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Char.Relative To Voltage at V
CE
=10V
Char.Relative To Voltage At
I
C
=10mA
Power Dissipation, P
D
(W)
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QW-R206-035.F
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