UNISONIC TECHNOLOGIES CO., LTD
MMBT3906
GENERAL PURPOSE
APPLIATION
FEATURES
* Collector-Emitter Voltage: V
CEO
=40V
* Collector Dissipation:
P
D(MAX)
=350mW
* Complementary to UTC MMBT3904
PNP SILICON TRANSISTOR
Lead-free:
MMBT3906L
Halogen-free: MMBT3906G
ORDERING INFORMATION
Ordering Number
Normal
Lead Free
Halogen Free
MMBT3906-AE3-R MMBT3906L-AE3-R MMBT3906G-AE3-R
MMBT3906-AL3-R MMBT3906L-AL3-R MMBT3906G-AL3-R
Package
SOT-23
SOT-323
Pin Assignment
1
2
3
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
MARKING
2A.
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
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QW-R206-013.D
MMBT3906
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(Ta=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector Base Voltage
V
CBO
-40
V
Collector Emitter Voltage
V
CEO
-40
V
Emitter Base Voltage
V
EBO
-5
V
Collector Current
I
C
-200
mA
Base Current
I
B
-50
mA
Collector Dissipation
P
C
350
mW
Junction Temperature
T
J
150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25°С, unless otherwise specified)
PARAMETER
Collector Cut-off Current
Base Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(Note)
Emitter-Base Breakdown Voltage
SYMBOL
TEST CONDITIONS
I
CEX
V
CE
=-30V, V
EB
=-3V
I
BL
V
CE
=-30V, V
EB
=-3V
V
CBO
I
C
=-10μA,I
E
=0
V
CEO
V
EBO
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
V
CE(SAT)
1
V
CE(SAT)
2
V
BE(SAT)
1
V
BE(SAT)
2
f
T
C
ob
t
ON
I
C
=-1mA, I
B
=0
MIN
TYP
MAX UNIT
-50
nA
-50
nA
V
V
V
-40
-40
DC Current Gain (Note)
Collector-Emitter Saturation Voltage (Note)
Base-Emitter Saturation Voltage
Transition Voltage
Output Capacitance
Turn on Time
Turn off Time
t
OFF
Note: Pulse test: PW≦300μs, Duty Cycle≦2%
I
E
=-10μA, I
C
=0
-6
V
CE
=-1V, I
C
=-0.1mA
60
V
CE
=-1V, I
C
=-1mA
80
V
CE
=-1V, I
C
=-10mA
100
V
CE
=-1V, I
C
=-50mA
60
V
CE
=-1V, I
C
=-100mA
30
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
-0.65
I
C
=-50mA, I
B
=-5mA
V
CE
=-20V, I
C
=-10mA, f=100MHz 250
V
CB
=-5V,I
E
=0, f=1MHz
V
CC
=-3V, V
BE
=-0.5V, I
C
=-10mA,
I
B1
=-1mA
I
B1
=1
B2
=-1mA
300
-0.25
-0.4
-0.85
-0.95
4.5
70
300
V
V
V
V
MHz
pF
ns
ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-013.D
MMBT3906
TYPICAL CHARACTERISTICS
DC Current Gain
1000
500
DC Current Gain, h
FE
300
1000
PNP SILICON TRANSISTOR
Current Gain-Bandwidth Product
Current Gain-Bandwidth Product, f
T
(MHz)
V
CE
=-1V
500
300
V
CE
=-20V
V
CE
=10V
100
50
30
100
50
30
V
CE
=1V
10
-1
-3 -5 -10
-30 -50 -100 -300 -1000
10
-0.1 -0.3 -0.5 -1
-3 -5 -10 -30 -50 -100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-10
Saturation Voltage, V
BE(SAT)
, V
CE(SAT)
(V)
Output Capacitance
12
Capacitance, C
ob
(pF)
10
8
6
4
2
-5
-3
-1
-0.5
-0.3
-0.1
-0.05
-0.03
I
C
=10 I
B
V
BE(SAT)
I
E
=0
f=100KHz
V
CE(SAT)
-0.01
-0.1 -0.3 -0.5 -1
-3 -5 -10 -30 -50 -100
0
-1
-3 -5
-10 -30 -30 -50 -100
Collector Current, I
C
(mA)
Collector-Base Voltage, V
CB
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-013.D
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