UNISONIC TECHNOLOGIES CO., LTD
MMBT1815
HIGH FREQUENCY NPN
AMPLIFIER TRANSISTOR
FEATURES
*
*
*
*
Collector-Emitter Voltage: BV
CEO
=50V
Collector Current up to 150mA
High h
FE
Linearity
Complement to MMBT1015
NPN SILICON TRANSISTOR
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MMBT1815L-x-AC3-R
MMBT1815G-x-AC3-R
MMBT1815L-x-AE3-R
MMBT1815G-x-AE3-R
MMBT1815L-x-AL3-R
MMBT1815G-x-AL3-R
MMBT1815L-x-AN3-R
MMBT1815G-x-AN3-R
MMBT1815L-x-AQ3-R
MMBT1815G-x-AQ3-R
Package
SOT-113
SOT-23
SOT-323
SOT-523
SOT-723
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
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Copyright © 2011 Unisonic Technologies Co., Ltd
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MMBT1815
MARKING
PACKAGE
Y
SOT-23
C4Y
C4G
MARKING
GR
NPN SILICON TRANSISTOR
BL
C4B
L: Lead Free
G: Halogen Free
L: Lead Free
G: Halogen Free
L: Lead Free
G: Halogen Free
SOT-113
SOT-323
SOT-523
C4
L: Lead Free
G: Halogen Free
SOT-723
C
L: Lead Free
G: Halogen Free
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SOT-23
Collector Dissipation
SOT-523/SOT-113/SOT-323
(T
A
=25°C)
SOT-723
Collector Current
Base Current
SYMBOL
V
CBO
V
CEO
V
EBO
P
C
I
C
I
B
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
( T
A
=25°C , unless otherwise specified )
RATINGS
60
50
5
250
200
190
150
50
UNIT
V
V
V
mW
mA
mA
Junction Temperature
T
J
150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Output Capacitance
Noise Figure
SYMBOL
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
V
BE(SAT)
I
CBO
I
EBO
h
FE1
h
FE2
f
T
C
OB
NF
TEST CONDITIONS
I
C
= 100μA, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 10μA, I
C
= 0
I
C
= 100mA, I
B
= 10mA
I
C
= 100mA, I
B
= 10mA
V
CB
= 60V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 6V, I
C
= 2mA
V
CE
= 6V, I
C
= 150mA
V
CE
= 10V,Ic = 50mA
V
CB
= 10V, I
E
= 0, f = 1MHz
I
C
= 0.1mA, V
CE
= 6V
R
G
= 10kΩ, f = 100Hz
MIN
50
50
5
TYP
MAX UNIT
V
V
V
0.25
V
1.0
V
100
nA
100
nA
700
MHz
pF
dB
0.1
120
25
80
2.0
1.0
3.0
1.0
CLASSIFICATION OF h
FE1
RANK
RANGE
Y
120-240
GR
200-400
BL
350-700
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Current Gain-Bandwidth Product
3
10
10
2
Collector Output Capacitance
Current Gain-bandwidth
product,f
T
(MHz)
Capacitance, Cob (pF)
V
CE
=6V
2
10
10
1
f=1MHz
I
E
=0
1
10
10
0
0
10
-1
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
10
Collector Current, Ic (mA)
Collector-Base Voltage (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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MMBT1815
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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