UNISONIC TECHNOLOGIES CO., LTD
MJE13001
NPN SILICON POWER
TRANSISTOR
FEATURES
* Collector-base voltage: V
(BR)CBO
=600V
* Collector current: I
C
=0.2A
1
NPN SILICON TRANSISTOR
SOT-89
1
TO-92
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free
Halogen Free
1
2
3
MJE13001-x-x-AB3-A -R MJE13001L-x-x-AB3-A -R MJE13001G-x-x-AB3-A-R SOT-89 E
C
B Tape Reel
MJE13001-x-x-AB3-F -R MJE13001L-x-x-AB3-F -R MJE13001G-x-x-AB3-F-R SOT-89 B
C
E Tape Reel
MJE13001-x-x-T92-B
MJE13001L-x-x-T92-B
MJE13001G-x-x-T92-B
TO-92
B
C
E Tape Box
MJE13001-x-x-T92-K
MJE13001L-x-x-T92-K
MJE13001G-x-x-T92-K
TO-92
Bulk
B
C
E
www.unisonic.com.tw
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QW-R201-055.F
Copyright © 2011 Unisonic Technologies Co., Ltd
MJE13001
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Collector Current
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
NPN SILICON TRANSISTOR
RATINGS
UNIT
400
V
600
V
7
V
200
mA
SOT-89
550
Collector Power Dissipation
P
C
mW
TO-92
750
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
a
=25℃, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Base-Emitter Voltage
Collector Cutoff Cut-Off Current
Collector Emitter Cut-Off Current
Emitter Cutoff Cut-Off Current
ON CHARACTERISTICS
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL-SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
Resistive Load
Storage Time
Fall Time
SYMBOL
BV
CBO
BV
CEO
BV
EBO
V
BE
I
CBO
I
CEO
I
EBO
h
FE1
*
h
FE2
V
CE(SAT)
V
BE(SAT)
f
T
t
S
t
F
TEST CONDITIONS
I
C
=100
μA,
I
E
=0
I
C
=1mA, I
B
=0
I
E
=100
μA,
I
C
=0
I
E
=100 mA
V
CB
=600V,I
E
=0A
V
CE
=400V, I
B
=0
V
EB
=7V, I
C
=0A
V
CE
=20 V, I
C
=20mA
V
CE
=10V, I
C
=0.25mA
I
C
=50mA, I
B
=10mA
I
C
=50mA, I
B
=10mA
I
C
=20mA,V
CE
=20V,f=1MHz
I
C
=50mA, I
B1
=-I
B2
=5mA,
V
CC
=45V
MIN TYP MAX
600
400
7
1.1
100
200
100
10
5
70
0.5
1.2
8
1.5
0.3
V
V
MHz
μs
μs
UNIT
V
V
V
V
μA
μA
μA
CLASSIFICATION OF h
FE1
*
RANK
A
B
15-20
C
20-25
D
25-30
E
30-35
F
35-40
G
40-45
H
45-50
I
50-55
J
55-60
K
60-65
L
65-70
RANGE 10-15
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R201-055.F
MJE13001
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Collecter Current,I
C
(mA)
Saturation Voltage,V
BE(SAT)
,V
CE(SAT)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Capacitance,C
OB
(pF)
DC Current Gain,h
FE
3 of 3
QW-R201-055.F
FPGA/CPLD
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