UNISONIC TECHNOLOGIES CO., LTD
MJD210
PNP SILICON DPAK FOR
SURFACE MOUNT
APPLICATIONS
DESCRIPTION
The UTC MJD210 is designed for low voltage, low-power,
high-gain audio amplifier applications.
PNP SILICON TRANSISTOR
1
TO-252
FEATURE
*Collector-Emitter Sustaining Voltage
V
CEO(SUS)
=-25V (Min) @ I
C
=-10mA
*High DC Current Gain
h
FE
=70 (Min) @ I
C
=-500mA
=45 (Min) @ I
C
=-2A
=10 (Min) @ I
C
=-5A
*Lead Formed for Surface Mount Applications in
Plastic Sleeves (No Suffix)
*Straight Lead Version in Plastic Sleeves (“-1” Suffix)
*Lead Formed Version in 16mm Tape and Reel
(“T4” Suffix)
*Low Collector – Emitter Saturation Voltage
V
CE(SAT)
= -0.3V (Max) @ I
C
=-500mA
= -0.75V (Max) @ I
C
= -2.0 A
*High Current-Gain-Bandwidth Product
f
T
= 65 MHz (Min) @ I
C
= -100 mA
*Annular Construction for Low Leakage
I
CBO
= -100 nA @ Rated V
CB
1
TO-251
ORDERING INFORMATION
Ordering Number
Lead Free Plating
Halogen Free
MJD210L-TM3-T
MJD210G-TM3-T
MJD210L-TN3-T
MJD210G-TN3-T
MJD210L-TN3-R
MJD210G-TN3-R
Package
TO-251
TO-252
TO-252
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
Packing
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2007 Unisonic Technologies Co., Ltd
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QW-R213-001.C
MJD210
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
-40
V
Collector-Emitter Voltage
V
CEO
-25
V
Emitter-Base Voltage
V
EBO
-7
V
I
C
A
Continuous
-5
Collector Current
Peak
-10
A
Base Current
I
B
-1
A
T
C
=25°C
12.5
W
Derate above 25°C
0.1
W/°C
Total Device Dissipation
P
D
Ta=25°C (Note2)
1.4
W
Derate above 25°C
0.011
W/°C
Junction Temperature
T
J
+150
°C
-65
~
+150
Storage Junction Temperature
T
STG
°C
Note: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. When surface mounted on minimum pad sizes recommended.
THERMAL DATA
(Ta=25°C, unless otherwise specified)
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATING
89.3
10
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(Note 1) V
CEO(SUS)
I
C
=-10mA, I
B
=0
V
CB
=-40V, I
E
=0
Collector Cutoff Current
I
CBO
V
CB
=-40V, I
E
=0, T
J
=125°C
Emitter Cutoff Current
I
EBO
V
BE
=-7V, I
C
=0
ON CHARACTERISTICS
I
C
=-500mA, V
CE
=-1V
DC Current Gain (Note 1)
h
FE
I
C
=-2A, V
CE
=-1V
I
C
=-5A, V
CE
=-2V
I
C
=-500mA, I
B
=-50mA
Collector-Emitter Saturation Voltage (Note 1) V
CE(SAT)
I
C
=-2A, I
B
=-200mA
I
C
=-5A, I
B
=-1A
Base-Emitter Saturation Voltage (Note 1)
V
BE(SAT)
I
C
=-5A, I
B
=-1A
Base-Emitter On Voltage (Note 1)
V
BE(ON)
I
C
=-2A, V
CE
=-1V
DYNAMIC CHARACTERISTICS
I
C
=-100mA, V
CE
=-10V,
Current-Gain-Bandwidth Product (Note 2)
f
T
f
TEST
= 10MHz
Output Capacitance
C
OB
V
CB
=-10V, I
E
=0, f=0.1MHz
Note: 1. Pulse Test: Pulse Width = 300μs, Duty Cycle
≈
2%.
2. f
T
=½h
FE
½‧f
TEST
.
MIN
-25
-100
-100
-100
70
45
10
MAX
UNIT
V
nA
nA
nA
180
-0.3
-0.75
-1.8
-2.5
-1.6
V
V
V
MHz
65
120
pF
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QW-R213-001.C
MJD210
TYPICAL CHARACTERISTICS
T
A
T
C
2.5 25
V
DS
=10V
I
D
=6V
Power Dissipation ,P
D
(W)
2
20
+11V
Power Derating
PNP SILICON TRANSISTOR
Switching Time Test Circuit
V
CC
25
µs
R
B
-9V
t
r
，t
f
≤10ns
Duty Cycle=1%
51
D1
R
C
SCOPE
+30V
1.5 15
T
A
T
C
0.5
5
(Surface Mount )
1
10
-4V
0
0
25
50
75
100
125
150
Temperature,T(℃)
R
B
and R
C
Varied to Obtain Desired Current Levels
D1 Must be Fast Recovery Type, e.g.:
1N5825 Used Above I
B
≈
100mA for PNP Test
Circuit MSD6100 Used Below I
B
≈100mA
Reverse
All Polaritries
Turn-On Time
1000
500
300
200
Time, t(ns)
100
50
30
20
10
5
3
(V
CC
=30V,I
C
/I
B
=10,T
J
=25℃)
2
1
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5
Collector Current,I
C
(A)
t
D
t
F
Time, t(ns)
10K
5K
3K
2K
1K
500
300
200
100
Turn-Off Time
t
S
t
F
10
50
30
20
(V
CC
=30V,I
C
/I
B
=10,I
B
1=I
B
2,T
J
=25℃)
10
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5
Collector Current, I
C
(A)
10
DC Current Gain,h
FE
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Voltage,V(V)
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MJD210
TYPICAL CHARACTERISTICS (Cont.)
Temperature Current (A)
+2.5
Temperature Coefficients ,θ
V
(mV/℃)
+2
+1.5
Capacitance ,C (pF)
+1
+0.5
0
-0.5
-1
-1.5
-2
-2.5
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1
Collector Current, I
C
(A)
2
3
5
20
-55℃ to 25℃
θ
VB
for V
BE
*θ
VC
for V
CE(SAT)
-55℃ to 25℃
25℃ to 150℃
25℃ to 150℃
100
70
50
*Applies For I
C
/I
B
≤h
EF/3
200
PNP SILICON TRANSISTOR
Capacitance
C
ib
T
J
=25℃
C
ob
30
0.4 0.5 1
2
4
6
10
20
40
Reverse Voltage, V
R
(V)
Transient Thermal Resistence
(Normalized) ,r(t)
Active Region Safe Operating Area
10
5
3
2
1
T
J
=150℃
100µ
500µ
1ms
DC
5ms
There are two limitations on the power handling
ability of a transistor: average junction temperature
and second breakdown. Safe operating area curves
indicate I
C
-V
CE
limits of the transistor that must be
observed for reliable operation; i.e., the transistor must
not be subjected to greater dissipation than the curves
indicate.
The data of Fig. 9 is based on T
J
(pk)=150℃; Tc is
variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
T
J
(pk)150℃. T
J
(pk) may be calculated from the data
in Figure 8. At high case temperatures, thermal
limitations will reduce the power that can be handled to
values less than the limitations imposed by second
breakdown.
__ _ __ _Bonding Wire Limited
__ __ __ Thermally Limited @T
C
=25℃
(Singel Pulse)
0.1 _______ Second Breakdown Limited
Curves Aplly Below
Rated V
CEO
0.01
2 3 5 7 10
1
0.3
Collector-Emitter Voltage, V
CE
(V)
20
30
UNISONIC TECHNOLOGIES CO., LTD
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4 of 5
QW-R213-001.C
MJD210
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R213-001.C
微控制器 MCU
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