TSB1184
Low Vce(sat) PNP Transistor
Pin Assignment:
1. Base
2. Collector
3. Emitter
BV
CEO
= - 50V
Ic = - 3A
V
CE (SAT)
, = - 0.3V(typ.) @Ic / Ib = - 2A / - 0.1A
Features
Low V
CE (SAT).
Excellent DC current gain characteristics
Ordering Information
Part No.
TSB1184CP
Packing
Tape & Reel
Package
TO-252
Structure
Epitaxial planar type.
PNP silicon transistor
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 2mS
DC
Pulse
TO-252
P
D
T
J
T
STG
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limit
- 50V
- 50V
-6
-3
- 7 (note 1)
1.0
+150
- 55 to +150
Unit
V
V
V
A
W
o
o
C
C
Electrical Characteristics
Ta = 25
o
C unless otherwise noted
Parameter
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Conditions
I
C
= - 50uA, I
E
= 0
I
C
= - 1mA, I
B
= 0
I
E
= - 50uA, I
C
= 0
V
CB
= - 40V, I
E
= 0
V
EB
= - 4V, I
C
= 0
I
C
/ I
B
= - 2.0A / - 0.2A
V
CE
= - 2V, I
C
= - 1A
V
CE
= - 5V, I
C
= - 100mA,
f = 100MHz
V
CB
= - 10V, f=1MHz
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
f
T
Cob
Min
- 50
- 50
-6
--
--
--
120
--
Typ
--
--
--
--
--
- 0.3
--
80
55
Max
--
--
--
-1
-1
- 0.5
560
--
--
Unit
V
V
V
uA
uA
V
MHz
pF
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Classification Of h
FE
Rank
Range
Q
120 - 270
R
180 - 390
S
270 - 560
TSB1184
1-1
2003/12 rev. B
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