UNISONIC TECHNOLOGIES CO., LTD
60N05
Preliminary
Power MOSFET
60A, 50V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
60N05
is an N-channel power MOSFET using UTC’s
advanced technology to provide the customers with perfect R
DS(ON)
,
high switching speed, high current capacity and low gate charge.
The UTC
60N05
is suitable for motor control, AC-DC or DC-DC
converters and audio amplifiers, etc.
FEATURES
* R
DS(ON)
=12mΩ @ V
GS
=10V,I
D
=30A
* High Switching Speed
* High Current Capacity
* Low Gate Charge(typical 130nC)
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
60N05L-TA3-T
60N05G-TA3-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-716.a
60N05
PARAMETER
Drain-Source Voltage (V
GS
=0)
Drain-Gate Voltage (R
GS
=20k
Ω)
Gate-Source Voltage
Preliminary
SYMBOL
V
DSS
V
DGR
V
GSS
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
RATINGS
UNIT
50
V
50
V
±20
V
60
A
T
C
=25°C
I
D
Continuous
Drain Current
T
C
=100°C
50
A
Pulsed (Note 1)
I
DM
240
A
Avalanche Current
I
AR
60
A
E
AS
600
mJ
Avalanche Energy
E
AR
150
mJ
Power Dissipation
P
D
125
W
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
1
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
V
DS
=Max Rating, V
GS
=0V
V
GS
=+20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=30A
MIN TYP MAX UNIT
60
250
+100
-100
2
3
4
0.012 0.014
3900
950
250
V
µA
nA
nA
V
Ω
pF
pF
pF
V
GS
=0V, V
DS
=25V, f=1.0MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-716.a
60N05
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DD
=40V, I
D
=60A
Gate to Source Charge
Q
GS
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
V
DD
=25V, I
D
=30A, R
G
=4.7Ω,
V
GS
=10V
Rise Time
t
R
Fall-Time
t
F
V
DD
=40V, I
D
=60A, R
G
=4.7Ω,
V
GS
=10V
Off-Voltage Rise Time
t
R(OFF)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
(Note 1)
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
SD
=60A, V
GS
=0V (Note 2)
Body Diode Reverse Recovery Time
t
rr
I
SD
=60A, V
DD
=30V, T
J
=150°C,
di/dt=100A/µs
Body Diode Reverse Recovery Charge
Q
RR
Notes: 1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration=300µs, Duty cycle 1.5%
MIN TYP MAX UNIT
130
26
55
30
180
35
135
170
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
60
240
1.6
150
0.56
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R502-716.a
Microchip MCU
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