UNISONIC TECHNOLOGIES CO., LTD
25N06
Preliminary
Power MOSFET
25A, 60V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
25N06
is an N-channel enhancement mode power
MOSFET, which provides low gate charge, avalanche rugged
technology, and so on.
The UTC
25N06
is universally applied in DC-DC & DC-AC
converters, motor control, high current, high speed switching,
solenoid and relay drivers, regulators, audio amplifiers, automotive
environment.
FEATURES
* Low Gate Charge
* R
DS(on)
= 0.048
Ω
(TYP.)
* Avalanche Rugged Technology
* 100% Avalanche Tested
* Repetitive Avalanche at 100°C
* High Current Capability
* Operating Temperature: 150°C
* Application Oriented Characterization
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
25N06L-TA3-T
25N06G-TA3-T
25N06L-TN3-T
25N06G-TN3-T
25N06L-TN3-R
25N06G-TN3-R
Note: Pin Assignment: G: Gate, D: Drain, S: Source
Package
TO-220
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
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Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-450.b
25N06
PARAMETER
Drain-Source Voltage (V
GS
=0)
Drain-Gate Voltage (R
GS
=20kΩ)
Gate-Source Voltage
Drain Current (Continuous)
T
C
=25°C
T
C
=100°C
Preliminary
SYMBOL
V
DS
V
DGR
V
GS
I
D
RATINGS
60
60
± 20
25
17
100
Power MOSFET
UNIT
V
V
V
A
A
A
ABSOLUTE MAXIMUM RATINGS
Drain Current (Pulsed) (Note 2)
I
DM
Single Pulse Avalanche Energy
E
AS
100
mJ
(starting T
J
=25°C, I
D
=25A, V
DD
=25 V)
TO-220
90
Power Dissipation at T
C
=25°C
P
D
W
TO-252
41
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-65 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-252
TO-220
TO-252
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
100
1.57
3
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
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2 of 6
QW-R502-450.b
25N06
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current (V
GS
=0)
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
V
DS
=Max Rating
V
DS
= Max Rating×0.8, T
C
=125°C
V
GS
=±20V
MIN TYP MAX UNIT
60
1
10
±100
2
25
7
2.9
4
0.048 0.065
11
700
320
90
26
8
9
30
90
80
80
900
450
150
40
V
µA
nA
V
Ω
A
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
A
A
Gate- Source Leakage Current (V
DS
=0)
I
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=12.5A
On State Drain Current
I
D(on)
V
DS
>I
D(on)
×R
DS(ON)MAX
, V
GS
=10V
Forward Transconductance (Note 1)
g
FS
V
DS
>I
D(on)
×R
DS(ON)MAX
, I
D
=12.5A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DD
=40V, V
GS
=10V, I
D
=25A
Gate to Source Charge
Q
GS
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
V
DD
=30V, I
D
=3A, R
G
=50Ω,
V
GS
=10V
Rise Time
t
R
Turn-OFF Delay Time
t
D(OFF)
V
DD
=40V, I
D
=25A, R
G
=50Ω,
V
GS
=10V
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
SD
=25A, V
GS
=0V (Note 1)
Source-Drain Current
I
SD
Source-Drain Current (Pulsed) (Note 2)
I
SDM
Note: 1. Pulsed: Pulse duration = 300µs, duty cycle 1.5%.
2. Pulse width limited by safe operating area
45
130
120
120
1.5
25
100
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-450.b
25N06
Preliminary
Power MOSFET
SWITCHING TIME TEST CIRCUIT
V
(BR)DSS
V
D
I
DM
I
D
V
DD
V
DD
Fig. 2 Unclamped Inductive Waveforms
V
D
R
L
R
G
V
GS
P
W
D.U.T.
2200µF
3.3µF
V
DD
Fig. 3. Switching Times Test Circuits For Resistive Load
UNISONIC TECHNOLOGIES CO., LTD
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4 of 6
QW-R502-450.b
25N06
Preliminary
12V
V
DD
47kΩ
100nF
1kΩ
Power MOSFET
SWITCHING TIME TEST CIRCUIT (Cont.)
V
I
=20V=V
GMAX
2200µF
I
G
=CONST
100Ω
D.U.T.
2.7kΩ
V
G
1kΩ
P
W
47kΩ
Fig. 4 Gate Charge Test Circuit
3.3µF
A
MOS
D
DIODE
G
25Ω
S
B
G
S
R
G
+
-
85Ω
A
FAST
DIODE
B
B
D
D.U.T.
V
DD
A
L=100µH
1000µF
Fig. 5 Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-450.b
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