UNISONIC TECHNOLOGIES CO., LTD
22N60
22A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
As the
SMPS MOSFET,
the UTC
22N60
uses UTC’s
advanced technology to provide excellent R
DS(ON)
, low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.
Power MOSFET
1
TO-247
FEATURES
* R
DS(ON)
= 0.35Ω
* Ultra Low Gate Charge ( Typical 150 nC )
* Low Reverse Transfer Capacitance ( C
RSS
= Typical 36 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
22N60L-T47-T
22N60G-T47-T
Package
TO-247
Pin Assignment
1
2
3
G
D
S
Packing
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-216.F
22N60
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current
I
AR
22
A
Continuous Drain Current
I
D
22
A
Pulsed Drain Current (Note 1)
I
DM
88
A
380
mJ
Single Pulsed
E
AS
Avalanche Energy
Repetitive
E
AR
37
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
18
V/ns
Power Dissipation
P
D
370
W
Junction Temperature
T
J
150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
40
0.34
UNIT
°C /W
°C /W
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2 of 6
QW-R502-216.F
22N60
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250µA
600
V
Drain-Source Leakage Current
I
DSS
V
DS
=600V, V
GS
=0V
50
µA
Gate- Source Leakage Current
I
GSS
V
DS
=0V, V
GS
=±30V
±100 nA
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
J
I
D
=1mA,Referenced to 25°C
0.30
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
2.0
4.0
V
Static Drain-Source On-Resistance
R
DS(ON)
V
GS
=10V, I
D
=13A (Note 4)
0.26 0.35
Ω
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
3570
pF
V
DS
=25V, V
GS
=0V, f=1.0MHz
Output Capacitance
C
OSS
350
pF
Reverse Transfer Capacitance
C
RSS
36
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
26
ns
Turn-ON Rise Time
t
R
99
ns
V
DD
=300V, I
D
=22A, R
G
=6.2Ω
V
GS
=10V (Note 4)
Turn-OFF Delay Time
t
D(OFF)
48
ns
Turn-OFF Fall-Time
t
F
37
ns
150 nC
Total Gate Charge
Q
G
V
DS
=480V, V
GS
=10V,
Gate Source Charge
Q
GS
45
nC
I
D
=22A (Note 4)
Gate Drain Charge
Q
GD
76
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0V, I
S
=22A
1.5
V
Continuous Source Current (Body Diode)
I
S
(Note 1)
22
A
Pulsed Source Current (Body Diode)
I
SM
88
A
590 890
ns
Reverse Recovery Time
t
rr
I
S
=22A, di/dt=100A/μs
(Note 4)
Reverse Recovery Charge
Q
RR
7.2
11
µC
Notes: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. T
J
= 25°C, L = 1.5mH, R
G
=25Ω, I
AS
= 22A
3. I
SD
≤
22A, di/dt
≤540A/μs,
V
DD
≤
V
(BR)DSS
, T
J
≤150°C.
4. Pulse Width
≤
300 s, Duty Cycle
≤
2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-216.F
22N60
TEST CIRCUITS
V
DS
V
GS
R
G
V
DD
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
Power MOSFET
R
D
D.U.T.
Switching Test Circuit
Switching Waveforms
15V
Driver
V
DS
R
G
20V
t
p
L
DUT
V
DD
I
AS
0.01Ω
I
AS
t
p
V
(BR)DSS
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
10V
Q
GS
Q
G
Q
GD
V
GS
Charge
Gate Charge Test Circuit
Gate Charge Waveform
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-216.F
22N60
TEST CIRCUITS(Cont.)
D.U.T.
+
V
DS
-
+
-
L
Power MOSFET
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-216.F
MSPM0 MCU
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