UNISONIC TECHNOLOGIES CO., LTD
22N20
Preliminary
Power MOSFET
22A, 200V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
22N20
is an N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide customers
with planar stripe and DMOS technology. This technology is
specialized in allowing a minimum on-state resistance and superior
switching performance. It also can withstand high energy pulse in
the avalanche and commutation mode.
The UTC
22N20
is universally applied in low voltage such as
automotive, high efficiency switching for DC/DC converters and DC
motor control.
1
TO-220
1
TO-252
FEATURES
* Fast switching
* R
DS(on)
= 0.14Ω @V
GS
= 10 V
* Typically 20nC low gate charge
* 100% avalanche tested
* Typically 25pF Low C
RSS
* Improved dv/dt capability
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
22N20L-TA3-T
22N20G-TA3-T
22N20L-TN3-R
22N20G-TN3-R
22N20L-TN3-T
22N20G-TN3-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-220
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tape Reel
Tube
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Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-611.b
22N20
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
200
V
Gate-Source Voltage
V
GSS
±30
V
I
D
22
A
Continuous (T
C
=25°C)
Drain Current
Pulsed (Note 2)
I
DM
88
A
Avalanche Energy Single Pulsed (Note 3)
E
AS
250
mJ
192
TO-220
W
Power Dissipation (T
C
=25°C)
TO-252
83
P
D
TO-220
1.53
Derate above 25°C
W/°C
TO-252
0.67
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L =0.85mH, I
AS
= 21A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-252
TO-220
TO-252
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
110
0.65
1.5
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25°C, I
D
=250µA
V
DS
=200V, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=160V, T
C
=125°C
Forward
V
GS
=+30V, V
DS
=0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=11A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=160V, I
D
=22A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=100V, I
D
=22A, R
G
=25Ω
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
MIN TYP MAX UNIT
200
0.25
1
10
+100
-100
3.0
5.0
0.12 0.14
1700 2200
220 290
30
40
27
5.8
11.2
35
300
130
180
35
V
V/°C
µA
nA
nA
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
80
610
270
370
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2 of 6
QW-R502-611.b
22N20
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=22A, V
GS
=0V
Note: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
22
88
1.5
A
A
V
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3 of 6
QW-R502-611.b
22N20
Gate Charge Test Circuit
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Gate Charge Waveforms
V
GS
Q
G
Same Type
as DUT
12V
200nF
50kΩ
V
GS
DUT
3mA
300nF
V
DS
10V
Q
GS
Q
GD
Charge
Unclamped Inductive Switching Test Circuit
V
DS
R
G
I
D
Unclamped Inductive Switching Waveforms
E
AS
= 1 LI
AS2
2
BV
DSS
L
I
AS
I
D
(t)
BV
DSS
BV
DSS
-V
DD
10V
t
P
DUT
V
DD
V
DD
V
DS
(t)
Time
t
P
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-611.b
22N20
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
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www.unisonic.com.tw
5 of 6
QW-R502-611.b
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