UNISONIC TECHNOLOGIES CO., LTD
20N65
Preliminary
Power MOSFET
20A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
20N65
is an N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide customers
with planar stripe and DMOS technology. This technology is
specialized in allowing a minimum on-state resistance and superior
switching performance. It also can withstand high energy pulse in
the avalanche and commutation mode.
The UTC
20N65
is universally applied in motor control, UPS, DC
choppers and switch-mode and resonant-mode power supplies.
1
TO-247
FEATURES
* R
DS(ON)
= 0.45Ω @V
GS
= 10 V
* High switching speed
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
20N65L-T47-T
20N65G-T47-T
Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-247
Pin Assignment
1
2
3
G
D
S
Packing
Tube
Note:
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-731.a
20N65
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
20
A
Continuous
I
D
Drain Current (T
C
=25°C)
Pulsed
I
DM
80
A
Avalanche Energy
Single Pulsed(Note 2)
E
AS
1200
mJ
Power Dissipation (T
C
=25°C)
P
D
300
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. V
DD
=50V, Starting T
J
=25°С, Peak I
AS
=20A, L=6mH
THERMAL DATA
PARAMETER
Junction to Case
SYMBOL
θ
JC
RATINGS
0.42
UNIT
°С/ W
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate- Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
V
DS
=650V, V
GS
=0V
V
GS
=+30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=10A, Pulse test,
t≤300µs, duty cycle d≤2%
MIN TYP MAX UNIT
650
V
10 µA
+100 nA
-100 nA
4.0
0.32 0.45
4500
420
140
150
29
60
20
43
70
40
170
40
85
40
60
90
60
20
80
1.5
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
2.0
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=520V, I
D
=10A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
GS
=10V, V
DS
=325V, I
D
=10A,
Turn-OFF Delay Time
t
D(OFF)
R
G
=2Ω (Note 1, 2)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous
I
S
V
GS
=0V
Current
Maximum Body-Diode Pulsed Current
I
SM
Repetitive
I
F
=I
S
, V
GS
=0V, Pulse test,
Drain-Source Diode Forward Voltage
V
SD
t≤300µs, duty cycle d≤2%
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-731.a
20N65
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-731.a
嵌入式系统
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