UNISONIC TECHNOLOGIES CO., LTD
12P10
9.4A, 100V P-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The
12P10
uses advanced proprietary, planar stripe, DMOS
technology to provide excellent R
DS(ON)
, low gate charge and
operation with low gate voltages. This device is suitable to be
used in low voltage applications such as audio amplifier, high
efficiency switching DC/DC converters, and DC motor control.
FEATURES
* R
DS(ON)
< 0.29Ω @V
GS
= -10V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
ORDERING INFORMATION
Package
SOT-223
TO-251
TO-251S
TO-252
TO-252D
TO-263
TO-263
SOP-8
S: Source
1
G
G
G
G
G
G
G
S
2
D
D
D
D
D
D
D
S
Pin Assignment
3 4 5 6 7
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S G D D D
8
-
-
-
-
-
-
-
D
Packing
Tape Reel
Tube
Tube
Tape Reel
Tape Reel
Tape Reel
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
12P10L-AA3-R
12P10G-AA3-R
12P10L-TM3-T
12P10G-TM3-T
12P10L-TMS-T
12P10G-TMS-T
12P10L-TN3-R
12P10G-TN3-R
12P10L-TND-R
12P10G-TND-R
12P10L-TQ2-R
12P10G-TQ2-R
12P10L-TQ2-T
12P10G-TQ2-T
12P10L-S08-R
12P10G-S08-R
Note: Pin Assignment: G: Gate
D: Drain
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Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-262.G
12P10
MARKING INFORMATION
PACKAGE
MARKING
Power MOSFET
SOT-223
TO-251
TO-251S
TO-252
TO-252D
TO-263
SOP-8
UNISONIC TECHNOLOGIES CO., LTD
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2 of 6
QW-R502-262.G
12P10
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
-100
V
Gate-Source Voltage
V
GSS
±30
V
Continuous Drain Current
I
D
-9.4
A
Pulsed Drain Current (Note 2)
I
DM
-37.6
A
Avalanche Current (Note 2)
I
AR
-9.4
A
Single Pulsed Avalanche Energy (Note 3)
E
AS
280
mJ
Repetitive Avalanche Energy (Note 2)
E
AR
5.0
mJ
TO-251/TO-251S
50
W
TO-252/TO-252D
TO-263
65
W
Power Dissipation
P
D
SOT-223
8
W
SOP-8
5
W
Junction Temperature
T
J
+150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T
J(MAX)
3. L=6.3mH, I
AS
=-9.4A, V
DD
=-25V, R
G
=25Ω, Starting T
J
=25°C
4. I
SD
≤-11.5A,
di/dt≤300μA/ s, V
DD
≤BV
DSS
, Starting T
J
=25°C
THERMAL DATA
SYMBOL
RATINGS
110
θ
JA
62.5
125
150
2.5
θ
JC
1.9
14
25
UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
PARAMETER
TO-251/TO-251S
TO-252/TO-252D
TO-263
Junction to Ambient
SOT-223
SOP-8
TO-251/TO-251S
TO-252/TO-252D
TO-263
Junction to Case
SOT-223
SOP-8
UNISONIC TECHNOLOGIES CO., LTD
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3 of 6
QW-R502-262.G
12P10
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
g
FS
C
ISS
C
OSS
C
RSS
Q
G
TEST CONDITIONS
V
GS
=0 V, I
D
=-250µA
V
DS
=-100V, V
GS
=0V
V
DS
=-100V, T
C
=125°C
V
DS
=0V, V
GS
=±30V
V
DS
=V
GS
, I
D
=-250µA
V
GS
=-10V, I
D
=-4.7A
V
DS
=-40V, I
D
=-4.7A (Note 1)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
Power MOSFET
MIN TYP MAX UNIT
-100
-1
-10
±100
-2.0
-4.0
0.24 0.29
6.3
570
115
30
21
4.6
4
30
64
155
70
800
290
85
27
V
µA
µA
nA
V
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
A
A
V
DS
=-25V, V
GS
=0V, f=1.0MHz
Gate Source Charge
Q
GS
Gate Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=-30V, I
D
=-0.5A,
R
G
=25Ω(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
=0V, I
S
=-9.4A
Maximum Body-Diode Continuous Current
I
S
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Note: 1. Pulse Test : Pulse width
≤
300μs, Duty cycle
≤
2%
Note:
2. Essentially independent of operating temperature
V
DS
=-50V, I
D
=-1.3A,
V
GS
=-10V(Note 1, 2)
40
100
175
90
-4.0
-9.4
-37.6
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-262.G
12P10
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
Power MOSFET
R
G
Compliment of D.U.T.
(N-Channel)
V
DD
V
GS
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
di/dt
Body Diode Reverse Current
V
DS
(D.U.T.)
V
DD
Body Diode Recovery dv/dt
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-262.G
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