UNISONIC TECHNOLOGIES CO., LTD
12N90
Preliminary
Power MOSFET
12A, 900V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
12N90
is an N-channel enhancement mode power
MOSFET useing UTC’s advanced technology to provide customers with
planar stripe and DMOS technology. This technology is specialized in
allowing a minimum on-state resistance and superior switching
performance. It also can withstand high energy pulse in the avalanche
and commutation mode.
The UTC
12N90
is universally applied in high efficiency switch
mode power supply.
1
TO-220
1
TO-220F1
FEATURES
* R
DS(on)
= 0.95Ω @V
GS
= 10 V
* High switching speed
* 100% avalanche tested
SYMBOL
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
12N90L-TA3-T
12N90G-TA3-T
TO-220
12N90L-TF1-T
12N90G-TF1-T
TO-220F1
Note: Pin Assignment: G: Gate D: Drain
S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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QW-R502-593.b
12N90
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
900
V
Gate-Source Voltage
V
GSS
±30
V
I
D
12
A
Continuous (T
C
=25°C)
Drain Current
Pulsed (Note 2)
I
DM
48
A
Avalanche Current (Note 2)
I
AR
12
A
TO-220
225
W
Power Dissipation
P
D
TO-220F1
51
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F1
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
0.56
2.43
UNIT
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/
△
T
J
I
D
=250µA, Referenced to 25°C
V
DS
=900V, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=720V, T
C
=125°C
Forward
V
GS
=+30V, V
DS
=0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=6A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=720V,
Gate to Source Charge
Q
GS
I
D
=12A (Note 1, 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=450V, I
D
=12A,
R
G
=25Ω (Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=12A, V
GS
=0V
Body Diode Reverse Recovery Time
t
rr
V
GS
=0V, I
S
=12A,
dI
F
/dt=100A/µs (Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Note: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
900
1.0
10
100
100
-100
3.0
5.0
0.8 0.95
4200
315
90
123 155
27
45
49
80
18
50
12
50
51 100
18
50
12
48
1.4
1000
17.0
V
V/°C
µA
nA
nA
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-593.b
12N90
V
DS
V
GS
R
G
R
L
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
V
DS
V
DD
90%
10V
Pulse Width≤1μs
Duty Factor≤0.1%
D.U.T.
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
12V
50kΩ
0.2μF
0.3μF
Same Type
as D.U.T.
10V
Q
GS
Q
G
V
DS
V
GS
DUT
3mA
Q
GD
V
GS
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-593.b
12N90
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R502-593.b
12N90
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-593.b
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