UNISONIC TECHNOLOGIES CO., LTD
12N80
Preliminary
Power MOSFET
12A, 800V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
12N80
is an N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide customers with
planar stripe and DMOS technology. This technology is specialized in
allowing a minimum on-state resistance and superior switching
performance. It also can withstand high energy pulse in the avalanche
and commutation mode.
The UTC
12N80
is universally applied in high efficiency switch
mode power supply.
1
TO-220
1
TO-220F1
FEATURES
* R
DS(on)
= 0.9Ω @V
GS
= 10 V
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
12N80L-TA3-T
12N80G-TA3-T
12N80L-TF1-T
12N80G-TF1-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-220
TO-220F1
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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QW-R502-594.b
12N80
PARAMETER
Preliminary
SYMBOL
V
DSS
V
GSS
I
D
I
DM
I
AR
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise specified)
RATINGS
UNIT
Drain-Source Voltage
800
V
Gate-Source Voltage
±30
V
Continuous (T
C
=25°C)
12
A
Drain Current
48
A
Pulsed (Note 2)
Avalanche Current (Note 2)
12
A
TO-220
225
W
Power Dissipation
P
D
TO-220F1
51
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F1
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
0.56
2.43
UNIT
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-594.b
12N80
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/
△
T
J
I
D
=250µA, Referenced to 25°C
V
DS
=800V, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=640V, T
C
=125°C
Forward
V
GS
=+30V, V
DS
=0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=6A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=640V, I
D
=12A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=400V, I
D
=12A, R
G
=25Ω
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=12A, V
GS
=0V
Body Diode Reverse Recovery Time
t
rr
V
GS
=0V, I
S
=12A, dI
F
/dt=100A/µs
(Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Note: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
800
1.0
10
100
100
-100
3.0
0.75
4200
315
90
123
27
49
18
12
51
18
155
45
80
50
50
100
50
12
48
1.4
1000
17.0
5.0
0.9
V
V/°C
µA
nA
nA
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-594.b
12N80
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Same Type
as DUT
12V
200nF
50kΩ
V
GS
DUT
3mA
300nF
V
DS
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
V
DS
R
G
I
D
BV
DSS
L
I
AS
E
AS
= 1 LI
AS2
2
BV
DSS
BV
DSS
-V
DD
10V
t
P
DUT
V
DD
V
DD
I
D
(t)
V
DS
(t)
Time
t
P
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-594.b
12N80
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
V
GS
(Driver
)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-594.b
Microchip MCU
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