UNISONIC TECHNOLOGIES CO., LTD
12N10
Preliminary
Power MOSFET
12A, 100V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
UT12N10
is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with minimum
on-state resistance for extremely high dense cell design, rugged
avalanche characteristics and less critical alignment steps .
1
TO-252
FEATURES
* R
DS(on)
< 0.10Ω @V
GS
= 10 V
*
R
DS(on)
< 0.12Ω @V
GS
= 5.0 V
* High switching speed
* Low gate charge
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
12N10L-TN3-R
12N10G-TN3-R
12N10L-TN3-T
12N10G-TN3-T
Package
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
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QW-R502-737.a
12N10
PARAMETER
Drain-Source Voltage (V
GS
=0)
Gate-Source Voltage
Preliminary
SYMBOL
V
DSS
V
GSS
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
RATINGS
UNIT
100
V
±20
V
12
A
T
C
= 25°C
I
D
Continuous
Drain Current
T
C
= 100°C
8.5
A
Pulsed (Note 2)
I
DM
48
A
30
W
Power Dissipation
Derating Factor
0.2
W/°C
P
D
Avalanche Energy (Note 3)
E
AS
100
mJ
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1 Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area
3. Starting T
J
= 25°C, I
D
= 12A, V
DD
= 50V
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
100
5
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate- Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
V
DS
=Max rating, V
GS
=0V
V
GS
=+20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=6A
MIN TYP MAX UNIT
100
V
1
µA
+100 nA
-100 nA
3
0.15 0.18
430
90
20
V
Ω
pF
pF
pF
1
V
GS
=0V, V
DS
=25V, f=1.0MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-737.a
12N10
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING PARAMETERS
(Note 1,2)
Total Gate Charge
Q
G
V
GS
=10V, V
DD
=80V, I
D
=12A
Gate to Source Charge
Q
GS
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=30V, I
D
=1A, R
G
=9.1Ω,
V
GS
=10V (Fig. 1)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=12A, V
GS
=0V
(Note 1)
Notes: 1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
7.5
2.5
3.0
12
7
18
3
10
nC
nC
nC
ns
ns
ns
ns
A
A
V
24
14
35
6
12
48
1.2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-737.a
12N10
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
V
DD
D
G
S
25Ω
A
D. U. T
B
R
G
+
-
A
A
L=100µH
1000µF
L
3.3µF
D. U. T
S
V
I
P
W
V
D
I
D
D. U. T
2200µF
3.3µF
V
DD
FAST
DIODE
B
B
D
G
Fig. 3 Test Circuit for Inductive Load Switching and Diode Recovery Times
Fig. 4 Unclamped Inductive Load Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R502-737.a
12N10
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-737.a
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