TSB1424A
Low Vce(sat) PNP Transistor
Pin assignment:
1. Base
2. Collector
3. Emitter
BV
CEO
= - 50V
Ic = - 3A
V
CE (SAT)
, = - 0.35V(typ.) @Ic / Ib = - 2A / - 0.1A
Features
Low V
CE (SAT).
Excellent DC current gain characteristics
Ordering Information
Part No.
TSB1424ACW
TSB1424ACY
Packing
2.5k per reel
1k per reel
Package
SOT-223
SOT-89
Marking
AE
AE
Structure
Epitaxial planar type.
Complementary to TSD2150A
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power Dissipation
SOT-89
SOT-223
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 10mS, Duty <= 30%
T
J
T
STG
P
D
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limit
- 50V
- 50V
-6
-3
-5
0.5
1.5
+150
- 55 to +150
Unit
V
V
V
A
W
o
o
C
C
Electrical Characteristics
Ta = 25
o
C unless otherwise noted
Parameter
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Conditions
I
C
= - 50uA
I
C
= - 1mA
I
E
= - 50uA
V
CB
= - 20V
V
EB
= - 5V
I
C
/ I
B
= - 2A / - 0.1A
V
CE
= 2V, I
C
= 100mA
V
CE
= 2V, I
C
= 1A
V
CE
= 2V, I
C
= 2A
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
h
FE
h
FE
f
T
Cob
Min
- 50
- 50
-6
--
--
--
180
180
180
--
--
Typ
--
--
--
--
--
-0.35
--
--
--
240
35
Max
--
--
--
- 0.1
-0.1
- 0.5
--
560
--
--
--
Unit
V
V
V
uA
uA
V
Transition Frequency
Output Capacitance
V
CE
= - 2V, I
C
= - 500mA,
f = 100MHz
V
CB
= - 10V, f=1MHz
MHz
pF
Note : pulse test: pulse width <=380uS, duty cycle <=2%
TSB1424A
1-1
2003/12 rev. B
电子竞赛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
