UNISONIC TECHNOLOGIES CO., LTD
88NXX
Preliminary
CMOS IC
BUILT-IN DELAY CIRCUIT
HIGH-PRECISION VOLTAGE
DETECTOR
DESCRIPTION
The UTC
88NXX
is a
high-precision
voltage detector developed
basing on CMOS technology. The detection voltage is fixed internally.
A
time delayed reset can be accomplished with an external
capacitor.
N-ch open-drain output form is available.
The UTC
88NXX
is generally used for power supply monitor of
portable equipment such as notebook PCs, digital still cameras, PDAs,
and mobile phones, constant voltage power monitor of cameras, video
equipment and communication equipment, and power monitor or reset of
CPUs and microcomputers.
FEATURES
* Extremely Low Current Dissipation :
1.2μA Typ. (Detection Voltage
≥
1.5 V @ V
DD
=3.5 V)
*
±2.0
% Accuracy Detection Voltage
* Hysteresis Characteristics: 5% TYP
* Detection Voltage varies from 1.5V to 6.0V with 0.1V step
* Output Forms: N-ch open-drain output (when it is in Active-Low)
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
88NXXL-AF5-R
88NXXG-AF5-R
88NXXL-AD4-R
88NXXG-AD4-R
Note: XX: Output Voltage, refer to Marking Information.
Package
SOT-25
SOT-143
Packing
Tape Reel
Tape Reel
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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QW-R502-368.d
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MARKING INFORMATION
PACKAGE
VOLTAGE CODE
Preliminary
CMOS IC
MARKING
SOT-143
SOT-25
14:1.4V
18:1.8V
21:2.1V
24:2.4V
27:2.7V
28:2.8V
29:2.9V
33:3.3V
PIN CONFIGURATION
V
OUT
4
CD
3
1
2
V
SS
For SOT-25
V
DD
For SOT-143
PIN DESCRIPTION
PIN NO
PIN NAME
DESCRIPTION
SOT-143
SOT-25
4
1
V
OUT
Voltage Detection Output Pin
2
2
V
DD
Voltage Input Pin
1
3
V
SS
GND Pin
-
4
NC
No Connection (Note)
3
5
CD
Connection Pin For Delay Capacitor
Note: The NC pin is electrically open and can be connected to V
DD
or V
SS
.
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QW-R502-368.d
88NXX
BLOCK DIAGRAM
Preliminary
CMOS IC
V
DD
+
-
V
REF
Delay
circuit
V
OUT
V
SS
CD
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QW-R502-368.d
88NXX
PARAMETER
Power Supply Voltage
CD pin Input Voltage
Output Voltage
Output Current
Preliminary
CMOS IC
ABSOLUTE MAXIMUM RATING
(T
A
=25°C, unless otherwise specified)
RATINGS
UNIT
12
V
V
SS
-0.3 ~ V
DD
+0.3
V
V
SS
-0.3 ~ V
SS
+12
V
50
mA
SOT-143
150
mW
Power Dissipation
P
D
SOT-25
250
mW
Operating Temperature
T
OPR
-40 ~ +85
°C
Storage Temperature
T
STG
-40 ~ +125
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
SYMBOL
V
DD
- V
SS
V
CD
V
OUT
I
OUT
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Detection Voltage: 1.4V
PARAMETER
Detection Voltage (Note 1)
Hysteresis Width
Current Consumption
Operating Voltage
Output Current
Leakage Current
SYMBOL
-V
DET
V
HYS
I
SS
V
DD
I
OUT
I
LEAK
TEST
CIRCUIT
1
1
2
1
3
3
1
4
TEST
CIRCUIT
1
1
2
1
3
3
1
4
V
DD
=3.5V
0.95
Output transistor
Nch, V
DS
=0.5V,V
DD
=1.2V
Output transistor
Nch, V
DS
=10V, V
DD
=10V
T
A
=-40°C ~ +85°C
V
DD
=3.5V, C
D
=4.7 nF
27
0.59
1.36
0.1
±100
V
DD
= 2.0V
0.95
Output transistor
Nch, V
DS
=0.5V,V
DD
=0.95V
Output transistor
Nch, V
DS
=10V, V
DD
=10V
T
A
=-40°C ~ +85°C
V
DD
= 2V, C
D
=4.7 nF
27
0.23
0.64
0.1
±100
TEST CONDITIONS
MIN
TYP
MAX
-V
DET(S)
×1.02
-V
DET
×0.08
2.5
10.0
UNIT
V
V
μA
V
mA
μA
-V
DET(S)
-V
DET(S)
×0.98
-V
DET
-V
DET
×0.03 ×0.05
Δ
- V
DET
Detection Voltage Temperature
Δ
Ta × - V
DET
Coefficient (Note 2)
Delay Time
t
D
±350 ppm/°C
42
ms
Detection Voltage: 1.8V
PARAMETER
Detection Voltage (Note 1)
Hysteresis Width
Current Consumption
Operating Voltage
Output Current
Leakage Current
SYMBOL
-V
DET
V
HYS
I
SS
V
DD
I
OUT
I
LEAK
TEST CONDITIONS
MIN
TYP
MAX
-V
DET(S)
×1.02
-V
DET
×0.08
2.8
10.0
UNIT
V
V
μA
V
mA
μA
-V
DET(S)
-V
DET(S)
×0.98
-V
DET
-V
DET
×0.03 ×0.05
Δ
- V
DET
Detection Voltage Temperature
Δ
Ta × - V
DET
Coefficient (Note 2)
Delay Time
t
D
±350 ppm/°C
42
ms
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QW-R502-368.d
88NXX
Detection Voltage: 2.1V
PARAMETER
Detection Voltage (Note 1)
Hysteresis Width
Current Consumption
Operating Voltage
Output Current
Leakage Current
SYMBOL
-V
DET
V
HYS
I
SS
V
DD
I
OUT
I
LEAK
Preliminary
CMOS IC
ELECTRICAL CHARACTERISTICS(Cont.)
(T
A
=25°C unless otherwise specified)
TEST
CIRCUIT
1
1
2
1
3
3
V
DD
=3.5 V
0.95
Output transistor
Nch, V
DS
=0.5V, V
DD
=1.2V
Output transistor
Nch, V
DS
=10V, V
DD
=10V
0.59
1.36
0.1
TEST CONDITIONS
MIN
TYP
MAX
-V
DET(S)
×1.02
-V
DET
×0.08
5
10.0
UNIT
V
V
μA
V
mA
μA
-V
DET(S)
-V
DET(S)
×0.98
-V
DET
-V
DET
×0.03 ×0.05
Δ
- V
DET
Detection Voltage Temperature
Δ
Ta × - V
DET
Coefficient (Note 2)
Delay Time
t
D
Detection Voltage: 2.4V
1
4
TEST
CIRCUIT
1
1
2
1
3
3
1
4
TEST
CIRCUIT
1
1
2
1
3
3
1
4
T
A
=-40°C ~ +85°C
V
DD
=3.5V, C
D
=4.7 nF
27
±100
±350 ppm/°C
42
ms
PARAMETER
Detection Voltage (Note 1)
Hysteresis Width
Current Consumption
Operating Voltage
Output Current
Leakage Current
Detection Voltage Temperature
Coefficient (Note 2)
Delay Time
Detection Voltage: 2.7V
SYMBOL
-V
DET
V
HYS
I
SS
V
DD
I
OUT
I
LEAK
Δ
- V
DET
Δ
Ta × - V
DET
t
D
TEST CONDITIONS
MIN
TYP
MAX
-V
DET(S)
×1.02
-V
DET
×0.08
5
10.0
UNIT
V
V
μA
V
mA
-V
DET(S)
-V
DET(S)
×0.98
-V
DET
-V
DET
×0.03 ×0.05
V
DD
=3.5V
0.95
Output transistor
Nch, V
DS
=0.5V, V
DD
=1.2V
Output transistor
Nch, V
DS
=10V, V
DD
=10V
T
A
=-40°C ~ +85°C
V
DD
=3.5V, C
D
=4.7 nF
27
0.59
1.36
0.1
±100
μA
±350 ppm/°C
42
ms
PARAMETER
Detection Voltage (Note 1)
Hysteresis Width
Current Consumption
Operating Voltage
Output Current
Leakage Current
Detection Voltage Temperature
Coefficient (Note 2)
Delay Time
SYMBOL
-V
DET
V
HYS
I
SS
V
DD
I
OUT
I
LEAK
Δ
- V
DET
Δ
Ta × - V
DET
t
D
TEST CONDITIONS
MIN
TYP
MAX
-V
DET(S)
×1.02
-V
DET
×0.08
5
10.0
UNIT
V
V
μA
V
mA
-V
DET(S)
-V
DET(S)
×0.98
-V
DET
-V
DET
×0.03 ×0.05
V
DD
=4.5V
0.95
Output transistor
Nch, V
DS
=0.5V, V
DD
=2.4V
Output transistor
Nch, V
DS
=10V, V
DD
=10V
T
A
=-40°C ~ +85°C
V
DD
=4.5V, C
D
=4.7 nF
12
2.88
4.98
0.1
±100
μA
±350 ppm/°C
27
ms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-368.d
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