UNISONIC TECHNOLOGIES CO., LTD
60N08
Preliminary
Power MOSFET
60 Amps, 80 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC
60N08
is an N-channel power MOSFET adopting UTC’s
advanced planar stripe and DMOS technology to provide designers
with perfectly high switching speed and minimum on-state resistance.
It also can withstand high energy pulse in the avalanche and
commutation modes.
The UTC
60N08
is applied in low voltage applications such as DC
motor control, automotive, and high efficiency switching for DC/DC
converters.
FEATURES
* 60A, 80V, R
DS(ON)
=0.024Ω @ V
GS
=10V
* High switching speed
* 100% avalanche tested
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
60N08L-TA3-T
60N08G-TA3-T
60N08L-TF1-T
60N08G-TF1-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
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Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-521.a
60N08
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C,
unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
V
DSS
80
V
Gate to Source Voltage
V
GSS
±25
V
Continuous
I
D
60
A
Continuous Drain Current
Pulsed
I
DM
176
A
Single Pulsed (Note 2)
E
AS
560
mJ
Avalanche Energy
8.5
mJ
Repetitive (Note 1)
E
AR
Peak Diode Recovery dv/dt (Note 3)
dv/dt
6.5
V/ns
TO-220
100
W
Power Dissipation
P
D
TO-220F1
70
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
TO-220
Junction to Ambient
TO-220F1
TO-220
Junction to Case
TO-220F1
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
62.5
1.25
1.77
UNIT
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
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2 of 6
QW-R502-521.a
60N08
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C,
unless otherwise specified)
SYMBOL
TEST CONDITIONS
MIN
80
0.07
1
10
+100
-100
2.0
4.0
0.018 0.024
31
1450 1900
520
680
120
155
50
9.3
25
16.5
200
70
95
65
TYP
MAX UNIT
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
μC
BV
DSS
V
GS
=0V, I
D
=250µA
ΔBV
DSS
/ΔT
J
I
D
=250μA,Referenced to 25°C
V
DS
=80V, V
GS
=0V
I
DSS
V
DS
=64V, T
C
=150°C
V
DS
=0V ,V
GS
=+25V
I
GSS
V
DS
=0V ,V
GS
=-25V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=30A
Forward Transconductance
g
FS
V
DS
=30V, I
D
=30A (Note 4)
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V,V
GS
=0V,f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DS
=64V, V
GS
=10V, I
D
=60A
Gate-Source Charge
Q
GS
(Note 4,5)
Gate-Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=40V, I
D
=60A,
R
G
=25Ω (Note 4,5)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=60A, V
GS
=0V
Body Diode Reverse Recovery Time
t
RR
V
GS
=0V, I
S
=60A,
dI
F
/dt=100A/μs (Note 4)
Body Diode Reverse Recovery Charge
Q
RR
Notes : 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=0.4mH, I
AS
=44A, V
DD
=25V, R
G
=25Ω, Starting T
J
=25°C
3. I
SD
≤60A,
di/dt
≤300A/μs,
V
DD
≤BV
DSS
, Starting T
J
=25°C
4. Pulse Test : Pulse width≤300μs, Duty cycle≤2%
5. Essentially independent of operating temperature
45
410
150
200
60
176
1.5
73
185
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-521.a
60N08
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-521.a
15N65
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Unclamped Inductive Switching Test Circuit
V
DS
R
G
I
D
Unclamped Inductive Switching Waveforms
E
AS
= 1 LI
AS2
2
BV
DSS
L
I
AS
I
D
(t)
BV
DSS
BV
DSS
-V
DD
10V
t
P
DUT
V
DD
V
DD
V
DS
(t)
Time
t
P
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5 of 6
QW-R502-521.a
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