UNISONIC TECHNOLOGIES CO., LTD
60N06
60A, 60V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
60N06
is N-channel enhancement mode power
field effect transistors with stable off-state characteristics, fast
switching speed, low thermal resistance, usually used at telecom
and computer application.
Power MOSFET
FEATURES
* R
DS(ON)
= 18mΩ
@V
GS
= 10 V
* Ultra low gate charge ( typical 39nC )
* Fast switching capability
* Low reverse transfer Capacitance (C
RSS
= typical 115pF )
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
60N06L-TA3-T
60N06G-TA3-T
TO-220
60N06L-TF3-T
60N06G-TF3-T
TO-220F
60N06L-TQ2-R
60N06G-TQ2-R
TO-263
60N06L-TQ2-T
60N06G-TQ2-T
TO-263
Note: Pin Assignment: G: Gate D: Drain
S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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Tape Reel
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Copyright © 2012 Unisonic Technologies Co., Ltd.
1 of 8
QW-R502-121.C
60N06
ABSOLUTE MAXIMUM RATINGS
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
V
DSS
60
V
Gate to Source Voltage
V
GS
±20
V
T
C
= 25°C
60
A
Continuous Drain Current
I
D
T
C
= 100°C
39
A
Drain Current Pulsed (Note 2)
I
DM
120
A
1000
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
180
mJ
TO-220
100
Power Dissipation
P
D
TO-220F
70.62
W
(T
C
=25°C)
TO-263
54
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repeativity rating: pulse width limited by junction temperature
3. L=0.61mH, I
AS
=60A, R
G
=20Ω, Starting T
J
=25℃
THERMAL DATA
PARAMETER
TO-220/TO-220F
Junction to Ambient
TO-263
TO-220
Junction to Case
TO-220F
TO-263
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
110
1.25
1.77
2.31
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge (Miller Charge)
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250μA
V
DS
= 60 V, V
GS
= 0 V
V
GS
= 20V, V
DS
= 0 V
V
GS
= -20V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10 V, I
D
= 30A
MIN
60
1
100
-100
2.0
14
2000
400
115
12
11
25
15
39
12
10
30
30
50
30
60
4.0
18
TYP
MAX UNIT
V
μA
nA
nA
V
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
GS
= 0V, V
DS
=25V, f = 1MHz
V
DD
=30V, I
D
=60A, R
L
=0.5Ω,
V
GS
=10V (Note 2, 3)
V
DS
= 30V, V
GS
= 10 V
I
D
= 60A (Note 2, 3)
UNISONIC TECHNOLOGIES CO., LTD
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2 of 8
QW-R502-121.C
60N06
ELECTRICAL CHARACTERISTICS(Cont.)
Power MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 60A
Continuous Source Current
I
S
Pulsed Source Current
I
SM
Reverse Recovery Time
t
rr
I
S
=60A, V
GS
=0V, dI
F
/dt=100A/μs
Reverse Recovery Charge
Q
RR
Note: 1. I
SD
≤60A,
di/dt≤300A/μs, V
DD
≤BV
DSS
, Starting T
J
=25℃
2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
3. Essentially independent of operating temperature.
TYP
MAX UNIT
1.6
60
120
V
A
ns
μC
60
3.4
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3 of 8
QW-R502-121.C
60N06
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
(Driver)
P.W.
Period
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 8
QW-R502-121.C
60N06
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
5 of 8
QW-R502-121.C
UNISONIC TECHNOLOGIES CO., LTD
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