UNISONIC TECHNOLOGIES CO., LTD
5302D
HIGH VOLTAGE NPN
TRANSISTOR WITH DIODE
DESCRIPTION
The UTC
5302D
are series of NPN silicon planar transistor
with diode and its suited to be used in power amplifier applications.
NPN SILICON TRANSISTOR
FEATURES
* Internal free-wheeling diode
* Makes efficient anti-saturation operation
* Low variable storage-time spread
* Low base drive
* Very suitable for half bridge light ballast application
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
5302DL-T60-K
5302DG-T60-K
5302DL-T92-B
5302DG-T92-B
5302DL-T92-K
5302DG-T92-K
5302DL-T92-R
5302DG-T92-R
5302DL-TM3-T
5302DG-TM3-T
5302DL-TN3-R
5302DG-TN3-R
5302DL-TN3-T
5302DG-TN3-T
Package
TO-126
TO-92
TO-92
TO-92
TO-251
TO-252
TO-252
Pin Assignment
1
2
3
B
C
E
E
C
B
E
C
B
E
C
B
B
C
E
B
C
E
B
C
E
Packing
Bulk
Tape Box
Bulk
Tape Reel
Tube
Tape Reel
Tube
5302DL-T60-T
(1)Packing Type
(2)Package Type
(3)Lead Free
(1) B: Tape Box, K: Bulk, T: Tube, R: Tape Reel
(2) T60: TO-126, T92: TO-92, TM3: TO-251,
TN3: TO-252
(3) G: Halogen Free, L: Lead Free
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Copyright © 2012 Unisonic Technologies Co., Ltd
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QW-R213-018.E
5302D
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Peak Current (t
P
<5ms)
Base Current
Base Peak Current (t
P
<5ms)
Power Dissipation (T
C
≤25°С)
TO-126
TO-92
TO-251/ TO-252
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
D
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°С, unless otherwise specified)
RATINGS
800
400
10
2
4
1
2
12.5
1.6
25
UNIT
V
V
V
A
A
A
A
W
Junction Temperature
T
J
+150
°С
Storage Temperature
T
STG
-65 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
TO-126
TO-92
TO-251/ TO-252
TO-126
TO-92
TO-251/ TO-252
SYMBOL
θ
JA
RATINGS
122
160
100
10
80
5
UNIT
°С/W
Junction to Case
θ
JC
°С/W
ELECTRICAL CHARACTERISTICS
(T
A
= 25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SYMBOL
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE(SAT1)
V
CE(SAT2)
V
BE(SAT1)
V
BE(SAT2)
TEST CONDITIONS
I
C
=10mA, I
E
=0 (Note)
I
C
=1mA, I
B
=0
I
E
=1mA, I
C
=0
V
CB
=800V, I
E
=0
V
EB
=9V, I
C
=0
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=400mA
V
CE
=5V, I
C
=1A
I
C
=0.5A, I
B
=0.1A (Note)
I
C
=1A, I
B
=0.25A (Note)
I
C
=0.5A, I
B
=0.1A (Note)
I
C
=1A, I
B
=0.25A (Note)
V
CC
=250V, I
C
=1A,
I
B1
=I
B2
=0.2A, t
P
=25uS
Duty Cycle<1%
I
C
=1A
I
C
=1A
MIN
400
800
10
1
1
10
10
5
1.1
TYP
MAX
UNIT
V
V
V
μA
μA
40
0.5
1.5
1.1
1.2
0.3
0.4
0.9
1.4
800
V
V
μS
μS
μS
V
μS
SWITCHING CHARACTERISTICS
Turn On Time
t
ON
Fall Time
t
F
Storage Time
t
STG
DIODE
Forward Voltage Drop
V
F
Fall Time
t
F
Note: Pulsed duration = 300μS, Duty cycle≤2%
0.15
0.2
0.5
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QW-R213-018. E
5302D
TYPICAL CHARACTERISTICS
14
12
Collector Current , I
C
(mA)
10
8
6
4
2
0
0
Collector Current , I
C
(µA)
Collector Current VS. BV
CEO
NPN SILICON TRANSISTOR
1400
1200
1000
800
600
400
200
0 0
Collector Current VS. BV
CBO
200 300
100
400 500 600
Collector-Emitter Breakdown Voltage ,BV
CEO
(V)
140
Emitter Current , I
E
(µA)
120
100
80
60
40
20
0
0
2
4
6
8 10 12 14 16 18 20
Emitter Current VS. BV
EBO
400
200
600
800
1000
Collector-Base Breakdown Voltage ,BV
CBO
(V)
Emitter-Base Breakdown Voltage ,BV
EBO
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R213-018. E
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