UNISONIC TECHNOLOGIES CO., LTD
UF840
8A, 500V, 0.85Ω, N-CHANNEL
POWER MOSFET
DESCRIPTION
The N-Channel enhancement mode silicon gate power MOSFET
is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
Power MOSFET
FEATURES
* Low R
DS(ON)
=0.85Ω
* Single Pulse Avalanche Energy Rated
* Rugged - SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF840L-TA3-T
UF840G-TA3-T
UF840L-TF1-T
UF840G-TF1-T
UF840L-TF2-T
UF840G-TF2-T
UF840L-TF3-T
UF840G-TF3-T
UF840L-TQ2-R
UF840G-TQ2-R
UF840L-TQ2-T
UF840G-TQ2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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Copyright © 2011 Unisonic Technologies Co., Ltd
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QW-R502-047,F
UF840
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C, unless Otherwise Specified.)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage (T
J
=25°C ~125°C)
V
DSS
500
V
Drain to Gate Voltage (R
GS
= 20kΩ, T
J
=25°C ~125°C)
V
DGR
500
V
Gate to Source Voltage
V
GSS
±30
V
8.0
A
Continuous
I
D
Drain Current
Pulsed
I
DM
32
A
TO-220
134
TO-220F/TO-220F1
44
Power Dissipation (T
C
=25°C)
P
D
W
TO-220F2
46
TO-263
134
Single Pulse Avalanche Energy
E
AS
510
mJ
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F/TO-220F1
TO-220F2
TO-263
SYMBOL
θ
JA
θ
Jc
RATINGS
62.5
0.93
2.86
2.72
0.93
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
=25°C, unless Otherwise Specified.)
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
On-State Drain Current (Note 1)
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
BV
DSS
I
D
= 250μA, V
GS
= 0V
V
GS(TH)
V
GS
= V
DS
, I
D
= 250μA
I
D(ON)
V
DS
> I
D(ON)
x R
DS(ON)MAX
, V
GS
= 10V
V
DS
= Rated BV
DSS
, V
GS
= 0V
I
DSS
V
DS
=0.8xRated BV
DSS
,V
GS
=0V,T
J
= 125°C
I
GSS
V
GS
= ±30V
MIN TYP MAX UNIT
500
V
2
4
V
8
A
25
μA
250 µA
±100 nA
0.8
15
50
21
20
42
7
22
1225
200
85
0.85
21
74
35
30
63
Ω
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
Gate-Source Leakage Current
Static Drain-Source On-State
R
DS(ON)
I
D
= 4.4A, V
GS
= 10V
Resistance (Note 1)
Turn-On Delay Time
t
DLY(ON)
Turn-Off Delay Time
t
DLY(OFF)
V
DD
=250V, I
D
≈
8A, R
G
= 9.1Ω, R
L
=30Ω
(Note 2)
Turn-On Rise Time
t
R
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G(TOT)
V
GS
=10V, I
D
=8A,V
DS
=0.8 x Rated BV
DSS
Gate-Source Charge
Q
GS
I
G(REF)
=1.5mA (Note 3)
Gate-Drain Charge
Q
GD
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
DS
= 25V, V
GS
= 0V, f = 1.0MHz
Reverse Transfer Capacitance
C
RSS
Note : 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
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QW-R502-047,F
UF840
INTERNAL PACKAGE INDUCTANCE
PARAMETER
SYMBOL
DRAIN INDUCTANCE
Measured from the contact screw on tab to center of die
L
D
Measured from the drain lead(6mm from package) to center of die
SOURCE INDUCTANCE
Measured from the source lead(6mm from header) to source bond pad
L
S
Remark:
Modified MOSFET symbol showing the internal devices inductances as below.
Power MOSFET
MIN TYP MAX UNIT
3.5
4.5
7.5
nH
nH
nH
SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Source to Drain Diode Voltage(Note 1)
V
SD
T
J
= 25°C, I
SD
= 8.0A, V
GS
= 0V
2
V
Continuous Source to Drain Current
I
SD
8
A
Note 2
Pulse Source to Drain Current
I
SDM
32
A
Reverse Recovery Time
t
rr
T
J
= 25°C, I
SD
= 8.0A, dI
SD
/dt = 100A/μs
210 475 970 ns
Reverse Recovery Charge
Q
RR
T
J
= 25°C, I
SD
= 8.0A, dI
SD
/dt = 100A/μs
2
4.6 8.2
μC
Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-047,F
UF840
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Unclamped Energy Test Circuit
Unclamped Energy Waveforms
Switching Time Test Circuit
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www.unisonic.com.tw
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QW-R502-047,F
UF840
TEST CIRCUITS AND WAVEFORMS (Cont.)
t
ON
t
DLY(ON)
t
R
V
DS
90%
t
OFF
t
DLY(OFF)
t
F
Power MOSFET
90%
0
10%
90%
10%
V
GS
0
10%
50%
50%
PULSE WIDTH
Resistive Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-047,F
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